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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
38DN06B02ELEMPRXPSA1DIODE GEN PURP 600V Infineon Technologies |
3,364 | - |
RFQ |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 600 V | 600 V | 5140A | 180°C (Max) | 960 mV @ 4500 A | ||
|
D1030N22TXPSA1DIODE GEN PURP 2.2KV 1030A Infineon Technologies |
2,530 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 2200 V | 2200 V | 1030A | -40°C ~ 160°C | 1.11 V @ 10000 A | |
|
ND171N18KHPSA1DIODE GP 1.8KV 171A BG-PB34-1 Infineon Technologies |
2,631 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1800 V | 1800 V | 171A | -40°C ~ 135°C | - | |
|
IDH20G65C5XKSA2DIODE SCHOTKY 650V 20A TO220-2-1 Infineon Technologies |
1,378 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 590pF @ 1V, 1MHz | 0 ns | 210 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A |
|
DZ540N26KHPSA1DIODE GEN PURP 2.6KV 732A MODULE Infineon Technologies |
3,139 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 2600 V | 2600 V | 732A | -40°C ~ 150°C | 1.64 V @ 2200 A | |
|
|
ND350N16KHPSA1DIODE GP 1.6KV 350A BG-PB50ND-1 Infineon Technologies |
3,547 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 30 mA @ 1600 V | 1600 V | 350A | -40°C ~ 135°C | - | |
|
D2520N22TVFXPSA1DIODE GP 2520A BG-D7526K0-1 Infineon Technologies |
3,029 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 75 mA @ 2200 V | - | 2520A | -40°C ~ 175°C | - | |
|
BAT6202VH6327XTSA1DIODE SCHOTTKY 40V SC79-2 Infineon Technologies |
17,149 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 0.6pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 20mA (DC) | 150°C (Max) | 1 V @ 2 mA | |
|
BAS3010S02LRHE6327XTSA1DIODE SCHOTTKY 30V 1A TSLP-2 Infineon Technologies |
34,580 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 15pF @ 5V, 1MHz | - | 300 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 650 mV @ 1 A | |
|
|
D2200N20TVFXPSA1DIODE GP 2200A BG-D7526K0-1 Infineon Technologies |
3,096 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 150 mA @ 2000 V | - | 2200A | -40°C ~ 160°C | - | |
|
|
D1030N26TXPSA1DIODE GEN PURP 2.6KV 1030A Infineon Technologies |
3,761 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 2600 V | 2600 V | 1030A | -40°C ~ 160°C | 1.11 V @ 10000 A | |
|
D2450N02TXPSA1DIODE GEN PURP 200V 2450A Infineon Technologies |
2,560 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 50 mA @ 200 V | 200 V | 2450A | -40°C ~ 180°C | 880 mV @ 2000 A | |
|
|
D2200N22TVFXPSA1DIODE GP 2200A BG-D7526K0-1 Infineon Technologies |
2,296 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 150 mA @ 2200 V | - | 2200A | -40°C ~ 160°C | - | |
|
|
D2200N24TVFXPSA1DIODE GEN PURP 2.4KV 2200A Infineon Technologies |
2,239 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 150 mA @ 2400 V | 2400 V | 2200A | -40°C ~ 160°C | 1.2 V @ 2000 A | |
|
|
DZ540N22KHPSA1DIODE GEN PURP 2.2KV 732A MODULE Infineon Technologies |
3,464 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 2200 V | 2200 V | 732A | -40°C ~ 150°C | 1.64 V @ 2200 A | |
|
|
AIDK10S65C5ATMA1DISCRETE DIODES Infineon Technologies |
3,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
AIDK12S65C5ATMA1DISCRETE DIODES Infineon Technologies |
2,980 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
IDC40S120C5X7SA1SIC CHIP Infineon Technologies |
2,673 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
AIDW12S65C5XKSA1DIODE SCHOTTKY 650V 12A TO247 Infineon Technologies |
235 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 363pF @ 1V, 1MHz | 0 ns | 70 µA @ 650 V | 650 V | 12A (DC) | -40°C ~ 175°C | 1.7 V @ 12 A |
|
|
D650N06TXPSA1DIODE GEN PURP 600V 650A Infineon Technologies |
3,299 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 600 V | 600 V | 650A | -40°C ~ 180°C | 950 mV @ 450 A |
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