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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIDC04D60F6X1SA4DIODE SWITCHING 600V WAFER Infineon Technologies |
2,597 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 9A (DC) | -40°C ~ 175°C | 1.6 V @ 9 A | |
|
|
SIDC07D60F6X1SA1DIODE SWITCHING 600V WAFER Infineon Technologies |
2,361 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 22.5A (DC) | -40°C ~ 175°C | 1.6 V @ 22.5 A | |
|
|
SIDC03D60C8X1SA2DIODE SWITCHING 600V 10A WAFER Infineon Technologies |
3,490 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -40°C ~ 175°C | 1.95 V @ 10 A | |
|
|
SIDC14D60F6X1SA1DIODE SWITCHING 600V WAFER Infineon Technologies |
3,053 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 45A (DC) | -40°C ~ 175°C | 1.6 V @ 45 A | |
|
|
SIDC03D60C8F1SA1DIODE SWITCHING 600V 10A WAFER Infineon Technologies |
2,594 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 10A (DC) | -40°C ~ 175°C | 1.95 V @ 10 A | ||
|
|
SIDC14D60C8X1SA2DIODE GEN PURP 600V 50A WAFER Infineon Technologies |
3,817 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 50A (DC) | -40°C ~ 175°C | 1.9 V @ 50 A | |
|
|
AIDK08S65C5ATMA1DISCRETE DIODES Infineon Technologies |
847 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
BAT1502ELE6327XTMA1DIODE SCHOT 4V 110MA TSLP-2-19 Infineon Technologies |
3,694 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 350pF @ 0V, 1MHz | - | 5 µA @ 1 V | 4 V | 110mA (DC) | -55°C ~ 150°C | 410 mV @ 10 mA | |
|
IDH12G65C6XKSA1DIODE SCHOTTKY 650V 27A TO220-2 Infineon Technologies |
3,371 | - |
RFQ |
Технические |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 594pF @ 1V, 1MHz | 0 ns | 40 µA @ 420 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.35 V @ 12 A | |
|
D170S25BS1XPSA1DIODE GEN PURP BG-DSW271-1 Infineon Technologies |
2,465 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | 4 µs | 5 mA @ 2500 V | 2500 V | 255A | 140°C (Max) | 2.3 V @ 800 A | ||
|
D56S45CS02PRXPSA1DIODE GEN PURP BG-DSW272-1 Infineon Technologies |
3,527 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | 3.3 µs | 5 mA @ 4500 V | 4500 V | 102A | 125°C (Max) | 4.5 V @ 320 A | ||
|
|
D690S26TS01XPSA1DIODE GEN PURP BG-D5726K-1 Infineon Technologies |
2,239 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 9 µs | 25 mA @ 2600 V | 2600 V | 690A | 150°C (Max) | 2.7 V @ 3000 A | ||
|
D841S45TS01XDLA1DIODE GEN PURP BG-D7514-1 Infineon Technologies |
2,617 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 140 mA @ 4500 V | 4500 V | 1080A | 125°C (Max) | 3.5 V @ 2500 A | ||
|
BAS16WE6327HTSA1DIODE GEN PURP 80V 250MA SOT323 Infineon Technologies |
2,622 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
IDV15E65D2XKSA1DIODE GEN PURP 650V 15A TO220-2 Infineon Technologies |
490 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 47 ns | 40 µA @ 650 V | 650 V | 15A | -40°C ~ 175°C | 2.2 V @ 15 A | |
|
|
IDH02G65C5XKSA2DIODE SCHOTTKY 650V 2A TO220-2 Infineon Technologies |
415 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 70pF @ 1V, 1MHz | 0 ns | - | 650 V | 2A (DC) | -55°C ~ 175°C | 1.7 V @ 2 A |
|
|
IDH03G65C5XKSA2DIODE SCHOTTKY 650V 3A TO220-2-1 Infineon Technologies |
169 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 100pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 3A (DC) | -55°C ~ 175°C | 1.7 V @ 3 A |
|
IDB12E120ATMA1DIODE GEN PURP 1.2KV 28A TO263-3 Infineon Technologies |
7,247 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 150 ns | 100 µA @ 1200 V | 1200 V | 28A (DC) | -55°C ~ 150°C | 2.15 V @ 12 A | |
|
|
IDB23E60ATMA1DIODE GP 600V 41A TO263-3-2 Infineon Technologies |
3,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 120 ns | 50 µA @ 600 V | 600 V | 41A (DC) | -55°C ~ 175°C | 2 V @ 23 A | |
|
|
IDP12E120XKSA1DIODE GEN PURP 1.2KV 28A TO220-2 Infineon Technologies |
246 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 100 µA @ 1200 V | 1200 V | 28A (DC) | -55°C ~ 150°C | 2.15 V @ 12 A |
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