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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
D650S14TQRXPSA1DIODE GEN PURP 1.4KV 620A Infineon Technologies |
2,975 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 5.3 µs | 20 mA @ 1400 V | 1400 V | 620A | -40°C ~ 150°C | 2.25 V @ 1400 A | |
|
|
D5810N02TVFXPSA1DIODE GEN PURP 200V 5800A Infineon Technologies |
2,714 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 100 mA @ 200 V | 200 V | 5800A | -40°C ~ 180°C | - | |
|
D471N80TXPSA1DIODE GEN PURP 8KV 760A Infineon Technologies |
2,788 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 50 mA @ 8000 V | 8000 V | 760A | -40°C ~ 160°C | 3.2 V @ 1200 A | |
|
|
D471N85TXPSA1DIODE GEN PURP 8.5KV 760A Infineon Technologies |
2,543 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 50 mA @ 8500 V | 8500 V | 760A | -40°C ~ 160°C | 3.2 V @ 1200 A | |
|
|
D450S16TXPSA1DIODE GEN PURP 1.6KV 443A Infineon Technologies |
3,220 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 6.2 µs | 10 mA @ 1600 V | 1600 V | 443A | -25°C ~ 180°C | 2.25 V @ 1200 A | |
|
IDFW80C65D1XKSA1IDFW80C65D1XKSA1 Infineon Technologies |
191 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 73 ns | 40 µA @ 650 V | 650 V | 74A (DC) | -40°C ~ 175°C | 1.7 V @ 40 A |
|
|
D450S20TXPSA1DIODE GEN PURP 2KV 443A Infineon Technologies |
2,303 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 6.2 µs | 10 mA @ 2000 V | 2000 V | 443A | -25°C ~ 180°C | 2.25 V @ 1200 A | |
|
|
D901S45TDIODE GEN PURP 4.5KV 1225A Infineon Technologies |
2,769 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 250 mA @ 4500 V | 4500 V | 1225A | -40°C ~ 125°C | 3.5 V @ 2500 A | |
|
IDK10G65C5XTMA2DIODE SCHOTTKY 650V 10A TO263-2 Infineon Technologies |
1,536 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | - | 650 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
BAT6402VH6327XTSA1DIODE SCHOTTKY 40V 250MA SC79-2 Infineon Technologies |
899 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 6pF @ 0V, 1MHz | 5 ns | 2 µA @ 30 V | 40 V | 250mA (DC) | 150°C (Max) | 750 mV @ 100 mA | |
|
IDL04G65C5XUMA2DIODE SCHOTTKY 650V 4A VSON-4 Infineon Technologies |
2,712 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 70 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.7 V @ 4 A |
|
DD171N16KKHOSA1THYR / DIODE MODULE DK Infineon Technologies |
3,312 | - |
RFQ |
Tray | DD171N | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
DZ600N16KB01HPSA1THYR / DIODE MODULE DK Infineon Technologies |
2,892 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | - | 40 mA @ 1800 V | 1800 V | 735A | 150°C (Max) | - | |
|
IDP18E120XKSA1DIODE GEN PURP 1.2KV 31A TO220-2 Infineon Technologies |
319 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 195 ns | 100 µA @ 1200 V | 1200 V | 31A (DC) | -55°C ~ 150°C | 2.15 V @ 18 A | |
|
IDDD08G65C6XTMA1SIC DIODES Infineon Technologies |
1,274 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 401pF @ 1V, 1MHz | 0 ns | 27 µA @ 420 V | 650 V | 24A (DC) | -55°C ~ 175°C | - |
|
|
IDK05G120C5XTMA1SIC DISCRETE Infineon Technologies |
810 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 301pF @ 1V, 1MHz | - | 33 µA @ 1200 V | 1200 V | 19.1A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A | |
|
|
IDK08G120C5XTMA1SIC DISCRETE Infineon Technologies |
963 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 365pF @ 1V, 1MHz | - | 40 µA @ 1200 V | 1200 V | 22.8A (DC) | -55°C ~ 175°C | 1.95 V @ 8 V | |
|
IDP45E60XKSA2IC IDP45E60 TO220-2 Infineon Technologies |
3,213 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
SIDC88D65DC8AX7SA2DIODE GENERAL PURPOSE 650V Infineon Technologies |
2,791 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
SIDC14D60E6X7SA1DIODE SWITCHING 600V WAFER Infineon Technologies |
2,117 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 27 µA @ 600 V | 600 V | 30A (DC) | -55°C ~ 150°C | 1.25 V @ 30 A |
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