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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDDD10G65C6XTMA1SIC DIODES Infineon Technologies |
3,843 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 495pF @ 1V, 1MHz | 0 ns | 33 µA @ 420 V | 650 V | 29A (DC) | -55°C ~ 175°C | - |
|
IDC08D120T6MX1SA2DIODE GEN PURP 1.2KV 10A WAFER Infineon Technologies |
2,018 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 2.7 µA @ 1200 V | 1200 V | 10A | -40°C ~ 175°C | 2.05 V @ 10 A | |
|
|
IDC10D120T6MX1SA1DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies |
2,489 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 3.5 µA @ 1200 V | 1200 V | 15A | -40°C ~ 175°C | 2.05 V @ 15 A | |
|
|
IDC15D120T6MX1SA2DIODE GEN PURP 1.2KV 25A WAFER Infineon Technologies |
2,699 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 5.2 µA @ 1200 V | 1200 V | 25A | -40°C ~ 175°C | 2.05 V @ 25 A | |
|
|
IDC28D120T6MX1SA2DIODE GEN PURP 1.2KV 50A WAFER Infineon Technologies |
2,255 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 10 µA @ 1200 V | 1200 V | 50A | -40°C ~ 175°C | 2.05 V @ 50 A | |
|
|
IDC40D120T6MX1SA4DIODE GEN PURP 1.2KV 75A WAFER Infineon Technologies |
3,935 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 14 µA @ 1200 V | 1200 V | 75A | -40°C ~ 175°C | 2.05 V @ 75 A | |
|
|
IDC51D120T6MX1SA3DIODE GEN PURP 1.2KV 100A WAFER Infineon Technologies |
2,647 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 18 µA @ 1200 V | 1200 V | 100A | -40°C ~ 175°C | 2.05 V @ 100 A | |
|
|
IDC73D120T6MX1SA2DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
3,610 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 26 µA @ 1200 V | 1200 V | 150A | -40°C ~ 175°C | 2.05 V @ 150 A | |
|
|
SIDC06D120H8X1SA2DIODE GEN PURP 1.2KV 7.5A WAFER Infineon Technologies |
3,295 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 7.5A (DC) | -40°C ~ 175°C | 1.97 V @ 7.5 A | |
|
|
SIDC08D120H8X1SA1DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
3,491 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | - | - | - | 27 µA @ 1200 V | 1200 V | 150A (DC) | -40°C ~ 175°C | 1.41 V @ 45 A | |
|
|
SIDC105D120H8X1SA1DIODE GEN PURP 1.2KV 200A WAFER Infineon Technologies |
3,400 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 200A (DC) | -40°C ~ 175°C | 1.41 V @ 45 A | |
|
IDH08G65C5XKSA2DIODE SCHOTTKY 650V 8A TO220-2-1 Infineon Technologies |
2,063 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 140 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
|
SIDC10D120H8X1SA2DIODE GEN PURP 1.2KV 15A WAFER Infineon Technologies |
2,715 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 15A (DC) | -40°C ~ 175°C | 1.97 V @ 7.5 A | |
|
|
SIDC14D120H8X1SA1DIODE GEN PURP 1.2KV 25A WAFER Infineon Technologies |
3,341 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 20 µA @ 1200 V | 1200 V | 25A (DC) | -40°C ~ 175°C | 1.97 V @ 25 A | |
|
|
SIDC23D120H8X1SA1DIODE GEN PURP 1.2KV 35A WAFER Infineon Technologies |
2,162 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 35A (DC) | -40°C ~ 175°C | 1.97 V @ 35 A | |
|
|
SIDC30D120H8X1SA4DIODE GEN PURP 1.2KV 50A WAFER Infineon Technologies |
3,537 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 50A (DC) | -40°C ~ 175°C | 1.97 V @ 50 A | |
|
|
SIDC42D120H8X1SA3DIODE GEN PURP 1.2KV 75A WAFER Infineon Technologies |
2,557 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 75A (DC) | -40°C ~ 175°C | 1.97 V @ 50 A | |
|
|
IDH09G65C5XKSA2DIODE SCHOTTKY 650V 9A TO220-2-1 Infineon Technologies |
2,440 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 270pF @ 1V, 1MHz | 0 ns | 160 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.7 V @ 9 A |
|
|
SIDC53D120H8X1SA1DIODE GEN PURP 1.2KV 100A WAFER Infineon Technologies |
3,261 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 27 µA @ 1200 V | 1200 V | 100A (DC) | -40°C ~ 175°C | 1.97 V @ 100 A | |
|
|
SIDC81D120H8X1SA3DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
2,004 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | - | - | - | 27 µA @ 1200 V | 1200 V | 150A (DC) | -40°C ~ 175°C | 2.15 V @ 150 A |
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