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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRD3CH101DB6DIODE GEN PURP 1.2KV 200A DIE Infineon Technologies |
2,822 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 360 ns | 3.6 µA @ 1200 V | 1200 V | 200A | -40°C ~ 175°C | 2.7 V @ 200 A | |
|
|
IRD3CH101DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,263 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH101DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,974 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH11DB6DIODE GEN PURP 1.2KV 25A DIE Infineon Technologies |
3,331 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 190 ns | 700 nA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 2.7 V @ 25 A | |
|
IDW10G65C5XKSA1DIODE SCHOTTKY 650V 10A TO247-3 Infineon Technologies |
2,032 | - |
RFQ |
Технические |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 180 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
IRD3CH11DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,381 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH11DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,311 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH16DB6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,304 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH16DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,438 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,725 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH24DB6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,498 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH24DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,738 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH24DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,842 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH31DB6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,761 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH31DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
3,547 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH31DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,043 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH42DB6DIODE GEN PURP 1.2KV 75A DIE Infineon Technologies |
2,476 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 285 ns | 1.5 µA @ 1200 V | 1200 V | 75A | -40°C ~ 150°C | 2.7 V @ 75 A | |
|
|
IRD3CH42DD6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,014 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH42DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,226 | - |
RFQ |
Технические |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
IRD3CH53DB6DIODE GEN PURP 1.2KV 100A DIE Infineon Technologies |
3,520 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 270 ns | 2 µA @ 1200 V | 1200 V | 100A | -40°C ~ 150°C | 2.7 V @ 100 A |
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