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PMIC - драйверы затворов

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
IR21271SPBF IC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies	3,546	-	RFQ	Технические	Bulk,Tube	-	Active	High-Side or Low-Side	Single	1	IGBT, N-Channel MOSFET	9V ~ 20V	0.8V, 3V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2113SPBF IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	2,028	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	2.5A, 2.5A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2110SPBF IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	2,022	-	RFQ	Технические	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	2.5A, 2.5A	Non-Inverting	500 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2011SPBF IC GATE DRVR HI/LOW SIDE 8SOIC Infineon Technologies	2,724	-	RFQ	Технические	Bulk,Tube	-	Active	High-Side or Low-Side	Independent	2	N-Channel MOSFET	10V ~ 20V	0.7V, 2.2V	1A, 1A	Inverting	200 V	35ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2101PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,062	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	210mA, 360mA	Non-Inverting	600 V	100ns, 50ns	-40°C ~ 150°C (TJ)	Through Hole
IR2184PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,784	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1.9A, 2.3A	Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole
IR2117PBF IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies	2,150	-	RFQ	Технические	Bulk,Tube	-	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	250mA, 500mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR25607SPBF IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	2,000	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	2.5A, 2.5A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2125SPBF IC GATE DRVR HIGH-SIDE 16SOIC Infineon Technologies	2,303	-	RFQ	Технические	Bulk,Tube	-	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	0V ~ 18V	0.8V, 2.2V	1.6A, 3.3A	Non-Inverting	500 V	43ns, 26ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2113SPBF IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	585	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	3.3V ~ 20V	6V, 9.5V	2A, 2A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2184PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	3,148	-	RFQ	Технические	Bulk,Tube	-	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	1.9A, 2.3A	Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole
IR2133SPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	2,284	-	RFQ	Технические	Tube	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.2V	250mA, 500mA	Inverting	600 V	90ns, 40ns	125°C (TJ)	Surface Mount
IR2233SPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	3,266	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2V	250mA, 500mA	Inverting	1200 V	90ns, 40ns	125°C (TJ)	Surface Mount
IRS25752LTRPBF IC GATE DRVR HIGH-SIDE SOT23-6 Infineon Technologies	3,785	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	µHVIC™	Active	High-Side	Single	1	N-Channel MOSFET	10V ~ 18V	-	160mA, 240mA	Non-Inverting	600 V	85ns, 40ns	-55°C ~ 150°C (TJ)	Surface Mount
IRS2104STRPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	3,630	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600 V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2005MTRPBF IC GATE DRVR HALF-BRIDGE 14MLPQ Infineon Technologies	3,697	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	200 V	70ns, 30ns	-40°C ~ 150°C (TJ)	Surface Mount
1ED44176N01FXUMA1 IC LOW SIDE GATE DRIVER 25V DSO8 Infineon Technologies	2,064	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	Low-Side	Single	1	IGBT	12.7V ~ 20V	1.2V, 1.7V	800mA, 1.75A	CMOS, TTL	-	50ns, 25ns	-40°C ~ 125°C (TA)	Surface Mount
2EDL05N06PFXUMA1 IC GATE DRVR HALF-BRIDGE 8DSO Infineon Technologies	3,381	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	EiceDriver™	Active	Half-Bridge	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10V ~ 20V	1.1V, 1.7V	-	Non-Inverting	600 V	48ns, 24ns	-40°C ~ 150°C (TJ)	Surface Mount
2EDL05I06PFXUMA1 IC GATE DRVR HALF-BRIDGE DSO8 Infineon Technologies	3,867	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT),Bulk	EiceDriver™	Active	Half-Bridge	Independent	2	IGBT	10V ~ 20V	1.1V, 1.7V	500mA, 500mA	Non-Inverting	600 V	48ns, 24ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS21271STRPBF IC GATE DRVR HIGH-SIDE 8SOIC Infineon Technologies	3,192	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	9V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount