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PMIC - драйверы затворов

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	DrivenConfiguration	ChannelType	NumberofDrivers	GateType	Voltage-Supply	LogicVoltage-VILVIH	Current-PeakOutput(SourceSink)	InputType	HighSideVoltage-Max(Bootstrap)	Rise/FallTime(Typ)	OperatingTemperature	MountingType
IR2109SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,321	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.9V	200mA, 350mA	Non-Inverting	600 V	150ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS21834SPBF IC GATE DRVR HALF-BRIDGE 14SOIC Infineon Technologies	3,780	-	RFQ	Технические	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	1.9A, 2.3A	Inverting, Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2011PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,026	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1A, 1A	Inverting	200 V	25ns, 15ns	-40°C ~ 150°C (TJ)	Through Hole
IR2181SPBF IC GATE DRVR HALF-BRIDGE 8SOIC Infineon Technologies	2,562	-	RFQ	Технические	Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1.9A, 2.3A	Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2336DSTRPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	3,415	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	200mA, 350mA	Inverting	600 V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2003PBF IC GATE DRVR HALF-BRIDGE 8DIP Infineon Technologies	2,059	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Inverting, Non-Inverting	200 V	70ns, 35ns	-40°C ~ 150°C (TJ)	Through Hole
IRS2127PBF IC GATE DRVR HIGH-SIDE 8DIP Infineon Technologies	3,989	-	RFQ	Технические	Bulk,Tube	-	Active	High-Side	Single	1	IGBT, N-Channel MOSFET	12V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600 V	80ns, 40ns	-40°C ~ 150°C (TJ)	Through Hole
IR2136SPBF IC GATE DRVR HALF-BRIDGE 28SOIC Infineon Technologies	780	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	200mA, 350mA	Inverting	600 V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2136JTRPBF IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	3,866	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 3V	200mA, 350mA	Inverting	600 V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2186PBF IC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies	3,404	-	RFQ	Технические	Tube	-	Not For New Designs	High-Side or Low-Side	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	4A, 4A	Non-Inverting	600 V	22ns, 18ns	-40°C ~ 150°C (TJ)	Through Hole
IR2010SPBF IC GATE DRVR HALF-BRIDGE 16SOIC Infineon Technologies	2,849	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	3A, 3A	Non-Inverting	200 V	10ns, 15ns	-40°C ~ 150°C (TJ)	Surface Mount
IRS2113PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	3,491	-	RFQ	Технические	Bulk,Tube	-	Not For New Designs	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	2.5A, 2.5A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Through Hole
IR2011PBF IC GATE DRV HI-SIDE/LO-SIDE 8DIP Infineon Technologies	340	-	RFQ	Технические	Bulk,Tube	-	Active	High-Side or Low-Side	Independent	2	N-Channel MOSFET	10V ~ 20V	0.7V, 2.2V	1A, 1A	Inverting	200 V	35ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole
IRS2113MTRPBF IC GATE DRVR HALF-BRIDGE 16MLPQ Infineon Technologies	2,646	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	6V, 9.5V	2.5A, 2.5A	Non-Inverting	600 V	25ns, 17ns	-40°C ~ 150°C (TJ)	Surface Mount
IR25600SPBF IC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies	3,664	-	RFQ	Технические	Bulk,Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel MOSFET	6V ~ 20V	0.8V, 2.7V	2.3A, 3.3A	Non-Inverting	-	15ns, 10ns	-40°C ~ 150°C (TJ)	Surface Mount
IR4427SPBF IC GATE DRVR LOW-SIDE 8SOIC Infineon Technologies	3,122	-	RFQ	Технические	Bulk,Tube	-	Active	Low-Side	Independent	2	IGBT, N-Channel MOSFET	6V ~ 20V	0.8V, 2.7V	2.3A, 3.3A	Non-Inverting	-	15ns, 10ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2114SSPBF IC GATE DRVR HALF-BRIDGE 24SSOP Infineon Technologies	157	-	RFQ	Технические	Bulk,Tube	-	Active	Half-Bridge	Independent	2	IGBT	11.5V ~ 20V	0.8V, 2V	2A, 3A	Non-Inverting	600 V	24ns, 7ns	-40°C ~ 150°C (TJ)	Surface Mount
IR2233JTRPBF IC GATE DRVR HALF-BRIDGE 44PLCC Infineon Technologies	2,533	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	Half-Bridge	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2V	250mA, 500mA	Inverting	1200 V	90ns, 40ns	125°C (TJ)	Surface Mount
1EDN7550BXTSA1 IC GATE DRVR HIGH-SIDE SOT23-6 Infineon Technologies	3,409	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT),Bulk	EiceDriver™	Active	High-Side	Single	1	N-Channel, P-Channel MOSFET	4.5V ~ 20V	-	4A, 8A	Non-Inverting	84 V	6.5ns, 4.5ns	-40°C ~ 150°C (TJ)	Surface Mount
1EDN8550BXTSA1 IC GATE DRVR HIGH-SIDE SOT23-6 Infineon Technologies	3,711	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT),Bulk	EiceDriver™	Active	High-Side	Single	1	N-Channel, P-Channel MOSFET	4.5V ~ 20V	-	4A, 8A	Non-Inverting	84 V	6.5ns, 4.5ns	-40°C ~ 150°C (TJ)	Surface Mount