Транзисторы - биполярные (BJT) - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
2SA1020-Y,T6NSF(J

2SA1020-Y,T6NSF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,528 -

RFQ

2SA1020-Y,T6NSF(J

Технические

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1020-Y,T6WNLF(J

2SA1020-Y,T6WNLF(J

TRANS PNP 50V 2A TO92MOD

Toshiba Semiconductor and Storage
2,235 -

RFQ

2SA1020-Y,T6WNLF(J

Технические

Bulk - Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 900 mW 100MHz 150°C (TJ) Through Hole
2SA1721RTE85LF

2SA1721RTE85LF

TRANS PNP 300V 0.1A SMINI

Toshiba Semiconductor and Storage
3,253 -

RFQ

2SA1721RTE85LF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active PNP 100 mA 300 V 500mV @ 2mA, 20mA 100nA (ICBO) 30 @ 20mA, 10V 150 mW 50MHz 150°C (TJ) Surface Mount
TPC6503(TE85L,F,M)

TPC6503(TE85L,F,M)

TRANS NPN 30V 1.5A VS-6

Toshiba Semiconductor and Storage
2,502 -

RFQ

TPC6503(TE85L,F,M)

Технические

Tape & Reel (TR) U-MOSVII Obsolete NPN 1.5 A 30 V 120mV @ 10mA, 500mA 100nA (ICBO) 400 @ 150mA, 2V 1.6 W - 150°C (TJ) Surface Mount
2SC5198-O(S1,E

2SC5198-O(S1,E

TRANS NPN 140V 10A TO3P

Toshiba Semiconductor and Storage
2,720 -

RFQ

2SC5198-O(S1,E

Технические

Tube - Active NPN 10 A 140 V 2V @ 700mA, 7A 5µA (ICBO) 55 @ 1A, 5V 100 W 30MHz 150°C (TJ) Through Hole
2SC6142(Q)

2SC6142(Q)

TRANS NPN 375V 1.5A PW-MOLD2

Toshiba Semiconductor and Storage
2,591 -

RFQ

2SC6142(Q)

Технические

Box - Active NPN 1.5 A 375 V 900mV @ 100mA, 800mA 50µA (ICBO) 100 @ 100mA, 5V 1.1 W - 150°C (TJ) Through Hole
2SA2060(TE12L,ZF)

2SA2060(TE12L,ZF)

TRANS PNP 50V 2A PW-MINI

Toshiba Semiconductor and Storage
3,206 -

RFQ

2SA2060(TE12L,ZF)

Технические

Box - Active PNP 2 A 50 V 200mV @ 33mA, 1A 100nA (ICBO) 200 @ 300mA, 2V 1 W - 150°C (TJ) Surface Mount
2SC5714(TE12L,ZF)

2SC5714(TE12L,ZF)

TRANS NPN 20V 4A PW-MINI

Toshiba Semiconductor and Storage
2,256 -

RFQ

2SC5714(TE12L,ZF)

Технические

Box - Active NPN 4 A 20 V 150mV @ 32mA, 1.6A 100nA (ICBO) 400 @ 500mA, 2V 1 W - 150°C (TJ) Surface Mount
2SC5819(TE12L,ZF)

2SC5819(TE12L,ZF)

TRANS NPN 20V 1.5A PW-MINI

Toshiba Semiconductor and Storage
3,662 -

RFQ

2SC5819(TE12L,ZF)

Технические

Box - Active NPN 1.5 A 20 V 120mV @ 10mA, 500mA 100nA (ICBO) 400 @ 150mA, 2V 1 W - 150°C (TJ) Surface Mount
2SA1586-Y(T5LND,F)

2SA1586-Y(T5LND,F)

TRANS PNP 50V 0.15A SC70

Toshiba Semiconductor and Storage
3,955 -

RFQ

2SA1586-Y(T5LND,F)

Технические

Tape & Reel (TR) - Obsolete PNP 150 mA 50 V 300mV @ 10mA, 100mA 100nA (ICBO) 120 @ 2mA, 6V 100 mW 80MHz 125°C (TJ) Surface Mount
2SA1242-Y(Q)

2SA1242-Y(Q)

TRANS PNP 20V 5A PW-MOLD

Toshiba Semiconductor and Storage
3,651 -

RFQ

2SA1242-Y(Q)

Технические

Tube - Obsolete PNP 5 A 20 V 1V @ 100mA, 4A 100nA (ICBO) 160 @ 500mA, 2V 1 W 170MHz 150°C (TJ) Surface Mount
2SA1244-Y(Q)

2SA1244-Y(Q)

TRANS PNP 50V 5A PW-MOLD

Toshiba Semiconductor and Storage
3,251 -

RFQ

2SA1244-Y(Q)

Технические

Tube - Obsolete PNP 5 A 50 V 400mV @ 150mA, 3A 1µA (ICBO) 120 @ 1A, 1V 1 W 60MHz 150°C (TJ) Surface Mount
2SA1887(F)

2SA1887(F)

TRANS PNP 50V 10A TO220NIS

Toshiba Semiconductor and Storage
2,122 -

RFQ

2SA1887(F)

Технические

Tube - Obsolete PNP 10 A 50 V 400mV @ 250mA, 5A 1µA (ICBO) 120 @ 1A, 1V 2 W 45MHz 150°C (TJ) Through Hole
2SA1930(Q,M)

2SA1930(Q,M)

TRANS PNP 180V 2A TO220NIS

Toshiba Semiconductor and Storage
2,350 -

RFQ

2SA1930(Q,M)

Технические

Bulk - Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) Through Hole
2SC2705-O(TE6,F,M)

2SC2705-O(TE6,F,M)

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,382 -

RFQ

2SC2705-O(TE6,F,M)

Технические

Tape & Box (TB) - Obsolete NPN 50 mA 150 V 1V @ 1mA, 10mA 100nA (ICBO) 80 @ 10mA, 5V 800 mW 200MHz 150°C (TJ) Through Hole
2SC2705-O(TPE6,F)

2SC2705-O(TPE6,F)

TRANS NPN 150V 0.05A TO92MOD

Toshiba Semiconductor and Storage
3,863 -

RFQ

2SC2705-O(TPE6,F)

Технические

Tape & Box (TB) - Obsolete NPN 50 mA 150 V 1V @ 1mA, 10mA 100nA (ICBO) 80 @ 10mA, 5V 800 mW 200MHz 150°C (TJ) Through Hole
2SC3074-O(Q)

2SC3074-O(Q)

TRANS NPN 50V 5A PW-MOLD

Toshiba Semiconductor and Storage
3,166 -

RFQ

2SC3074-O(Q)

Технические

Tube - Obsolete NPN 5 A 50 V 400mV @ 150mA, 3A 1µA (ICBO) 70 @ 1A, 1V 1 W 120MHz 150°C (TJ) Surface Mount
2SC3074-Y(Q)

2SC3074-Y(Q)

TRANS NPN 50V 5A PW-MOLD

Toshiba Semiconductor and Storage
2,241 -

RFQ

2SC3074-Y(Q)

Технические

Tube - Obsolete NPN 5 A 50 V 400mV @ 150mA, 3A 1µA (ICBO) 120 @ 1A, 1V 1 W 120MHz 150°C (TJ) Surface Mount
2SC5439(F)

2SC5439(F)

TRANS NPN 450V 8A TO220NIS

Toshiba Semiconductor and Storage
3,709 -

RFQ

2SC5439(F)

Технические

Tube - Obsolete NPN 8 A 450 V 1V @ 640mA, 3.2A 100µA (ICBO) 14 @ 1A, 5V 2 W - 150°C (TJ) Through Hole
2SD1407A-Y(F)

2SD1407A-Y(F)

TRANS NPN 100V 5A TO220NIS

Toshiba Semiconductor and Storage
3,822 -

RFQ

2SD1407A-Y(F)

Технические

Tube - Obsolete NPN 5 A 100 V 2V @ 400mA, 4A 100µA (ICBO) 120 @ 1A, 5V 30 W 12MHz 150°C (TJ) Through Hole
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