Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
2SC5171,MATUDQ(JTRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
3,689 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
![]() |
2SC5171,ONKQ(JTRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
2,093 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
![]() |
2SC5171,Q(JTRANS NPN 180V 2A TO220NIS Toshiba Semiconductor and Storage |
3,396 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 2 A | 180 V | 1V @ 100mA, 1A | 5µA (ICBO) | 100 @ 100mA, 5V | 2 W | 200MHz | 150°C (TJ) | Through Hole |
![]() |
2SC5172(YAZK,Q,M)TRANS NPN 400V 5A TO220NIS Toshiba Semiconductor and Storage |
2,699 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 5 A | 400 V | 1V @ 250mA, 2A | 20µA (ICBO) | 20 @ 500mA, 5V | 2 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC5201(T6MURATAFMTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
3,310 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
![]() |
2SC5201(TE6,F,M)TRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,452 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
![]() |
2SC5201,F(JTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,329 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
![]() |
2SC5201,T6F(JTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,290 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
![]() |
2SC5201,T6MURAF(JTRANS NPN 600V 0.05A TO92MOD Toshiba Semiconductor and Storage |
2,462 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 50 mA | 600 V | 1V @ 500mA, 20mA | 1µA (ICBO) | 100 @ 20mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
![]() |
2SC5459(TOJS,Q,M)TRANS NPN 400V 3A TO220NIS Toshiba Semiconductor and Storage |
3,439 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 3 A | 400 V | 1V @ 150mA, 1.2A | 100µA (ICBO) | 20 @ 300mA, 5V | 2 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC5549,T6F(JTRANS NPN 400V 1A TO92MOD Toshiba Semiconductor and Storage |
3,810 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 400 V | 1V @ 25mA, 200mA | 100µA (ICBO) | 20 @ 40mA, 5V | 900 mW | - | 150°C (TJ) | Through Hole |
![]() |
2SC5930(T2MITUM,FMTRANS NPN 600V 1A MSTM Toshiba Semiconductor and Storage |
2,734 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 600 V | 1V @ 75mA, 600mA | 100µA (ICBO) | 40 @ 200mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC5930(TPF2,F,M)TRANS NPN 600V 1A MSTM Toshiba Semiconductor and Storage |
2,239 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 600 V | 1V @ 75mA, 600mA | 100µA (ICBO) | 40 @ 200mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC6010(T2MITUM,FMTRANS NPN 600V 1A MSTM Toshiba Semiconductor and Storage |
2,992 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 600 V | 1V @ 75mA, 600mA | 100µA (ICBO) | 100 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC6040(TPF2,Q,M)TRANS NPN 800V 1A MSTM Toshiba Semiconductor and Storage |
2,242 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 800 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 60 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC6040,T2Q(JTRANS NPN 800V 1A MSTM Toshiba Semiconductor and Storage |
2,235 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 800 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 60 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC6042,T2HOSH1Q(JTRANS NPN 375V 1A MSTM Toshiba Semiconductor and Storage |
2,450 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 375 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 100 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC6042,T2WNLQ(JTRANS NPN 375V 1A MSTM Toshiba Semiconductor and Storage |
3,545 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1 A | 375 V | 1V @ 100mA, 800mA | 100µA (ICBO) | 100 @ 100mA, 5V | 1 W | - | 150°C (TJ) | Through Hole |
![]() |
2SC6139,T2F(MTRANS NPN 160V 1.5A MSTM Toshiba Semiconductor and Storage |
2,373 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 1.5 A | 160 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 140 @ 100mA, 5V | 1 W | 100MHz | 150°C (TJ) | Through Hole |
![]() |
2SD2129,ALPSQ(MTRANS NPN 100V 3A TO220NIS Toshiba Semiconductor and Storage |
3,229 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | NPN | 3 A | 100 V | 2V @ 12mA, 3A | 100µA (ICBO) | 2000 @ 1.5A, 3V | 2 W | - | 150°C (TJ) | Through Hole |