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Транзисторы - FET, MOSFET - массивы
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF9910PBFMOSFET 2N-CH 20V 10A/12A 8-SOIC Infineon Technologies |
3,766 | - |
RFQ |
Технические |
Tube,Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A, 12A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9952PBFMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
2,825 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | N and P-Channel | Logic Level Gate | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9953PBFMOSFET 2P-CH 30V 2.3A 8-SOIC Infineon Technologies |
2,827 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Standard | 30V | 2.3A | 250mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9956PBFMOSFET 2N-CH 30V 3.5A 8-SOIC Infineon Technologies |
3,658 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.5A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | 190pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7902PBFMOSFET 2N-CH 30V 6.4A/9.7A 8SOIC Infineon Technologies |
3,710 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.4A, 9.7A | 22.6mOhm @ 6.4A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 580pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7904PBFMOSFET 2N-CH 30V 7.6A/11A 8SOIC Infineon Technologies |
3,605 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.6A, 11A | 16.2mOhm @ 7.6A, 10V | 2.25V @ 25µA | 11nC @ 4.5V | 910pF @ 15V | 1.4W, 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7905PBFMOSFET 2N-CH 30V 7.8A/8.9A 8SOIC Infineon Technologies |
2,895 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.8A, 8.9A | 21.8mOhm @ 7.8A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 600pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7907PBFMOSFET 2N-CH 30V 9.1A/11A 8SOIC Infineon Technologies |
3,657 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 30V | 9.1A, 11A | 16.4mOhm @ 9.1A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | 850pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO350N03MOSFET 2N-CH 30V 5A 8DSO Infineon Technologies |
3,295 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5A | 35mOhm @ 6A, 10V | 2V @ 6µA | 3.7nC @ 5V | 480pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO4804TMOSFET 2N-CH 30V 8A 8SOIC Infineon Technologies |
2,961 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 20mOhm @ 8A, 10V | 2V @ 30µA | 17nC @ 5V | 870pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO612CVGHUMA1MOSFET N/P-CH 60V 2A 8-SOIC Infineon Technologies |
2,159 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | SIPMOS® | Obsolete | N and P-Channel | Standard | 60V | 3A, 2A | 120mOhm @ 3A, 10V | 4V @ 20µA | 15.5nC @ 10V | 340pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO615CTMOSFET N/P-CH 60V 3.1A/2A 8SOIC Infineon Technologies |
3,913 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Obsolete | N and P-Channel | Logic Level Gate | 60V | 3.1A, 2A | 110mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO615NGHUMA1MOSFET 2N-CH 60V 2.6A 8SOIC Infineon Technologies |
3,090 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SIPMOS® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 60V | 2.6A | 150mOhm @ 2.6A, 4.5V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO303PNTMA1MOSFET 2P-CH 30V 8.2A 8DSO Infineon Technologies |
2,416 | - |
RFQ |
Технические |
Tape & Reel (TR) | OptiMOS™ | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8.2A | 21mOhm @ 8.2A, 10V | 2V @ 100µA | 72.5nC @ 10V | 1761pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO150N03MOSFET 2N-CH 30V 7.6A 8DSO Infineon Technologies |
2,215 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | 2 N-Channel (Dual) | Standard | 30V | 7.6A | 15mOhm @ 9.1A, 10V | 2V @ 25µA | 15nC @ 5V | 1890pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSO200N03MOSFET 2N-CH 30V 6.6A 8DSO Infineon Technologies |
3,020 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.6A | 20mOhm @ 7.9A, 10V | 2V @ 13µA | 8nC @ 5V | 1010pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7504TRPBFMOSFET 2P-CH 20V 1.7A MICRO8 Infineon Technologies |
3,392 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 1.7A | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | 240pF @ 15V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7555TRPBFMOSFET 2P-CH 20V 4.3A MICRO8 Infineon Technologies |
3,004 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | 1066pF @ 10V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7507PBFMOSFET N/P-CH DUAL 20V MICRO-8 Infineon Technologies |
3,232 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | N and P-Channel | Logic Level Gate | 20V | 2.4A, 1.7A | 140mOhm @ 1.7A, 4.5V | 700mV @ 250µA (Min) | 8nC @ 4.5V | 260pF @ 15V | 1.25W | - | Surface Mount |
|
IRF7757TRPBFMOSFET 2N-CH 20V 4.8A 8TSSOP Infineon Technologies |
3,912 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.8A | 35mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | 1340pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount |
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