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Транзисторы - FET, MOSFET - массивы
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7304PBFMOSFET 2P-CH 20V 4.3A 8-SOIC Infineon Technologies |
3,430 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4.3A | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 610pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7306PBFMOSFET 2P-CH 30V 3.6A 8-SOIC Infineon Technologies |
3,966 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25nC @ 10V | 440pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7307PBFMOSFET N/P-CH 20V 8-SOIC Infineon Technologies |
3,542 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | N and P-Channel | Logic Level Gate | 20V | 5.2A, 4.3A | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7309PBFMOSFET N/P-CH 30V 4A/3A 8SOIC Infineon Technologies |
3,809 | - |
RFQ |
Технические |
Tube,Tube | HEXFET® | Discontinued at Mosen | N and P-Channel | Standard | 30V | 4A, 3A | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7311PBFMOSFET 2N-CH 20V 6.6A 8-SOIC Infineon Technologies |
2,421 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7313PBFMOSFET 2N-CH 30V 6.5A 8-SOIC Infineon Technologies |
2,679 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Standard | 30V | 6.5A | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7314PBFMOSFET 2P-CH 20V 5.3A 8-SOIC Infineon Technologies |
2,129 | - |
RFQ |
Технические |
Tube,Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5.3A | 58mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7316PBFMOSFET 2P-CH 30V 4.9A 8-SOIC Infineon Technologies |
2,608 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7317PBFMOSFET N/P-CH 20V 8-SOIC Infineon Technologies |
2,655 | - |
RFQ |
Технические |
Bulk,Tube | HEXFET® | Discontinued at Mosen | N and P-Channel | Logic Level Gate | 20V | 6.6A, 5.3A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7319PBFMOSFET N/P-CH 30V 8SOIC Infineon Technologies |
3,449 | - |
RFQ |
Технические |
Tube,Tube | HEXFET® | Discontinued at Mosen | N and P-Channel | Standard | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7325PBFMOSFET 2P-CH 12V 7.8A 8-SOIC Infineon Technologies |
3,282 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 12V | 7.8A | 24mOhm @ 7.8A, 4.5V | 900mV @ 250µA | 33nC @ 4.5V | 2020pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7328PBFMOSFET 2P-CH 30V 8A 8SO Infineon Technologies |
2,062 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Logic Level Gate | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | 2675pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7329PBFMOSFET 2P-CH 12V 9.2A 8-SOIC Infineon Technologies |
2,466 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Logic Level Gate | 12V | 9.2A | 17mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | 3450pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7331PBFMOSFET 2N-CH 20V 7A 8-SOIC Infineon Technologies |
2,143 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7A | 30mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1340pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7341PBFMOSFET 2N-CH 55V 4.7A 8-SOIC Infineon Technologies |
3,316 | - |
RFQ |
Технические |
Bulk,Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 55V | 4.7A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7342PBFMOSFET 2P-CH 55V 3.4A 8-SOIC Infineon Technologies |
2,153 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7343PBFMOSFET N/P-CH 55V 8-SOIC Infineon Technologies |
2,815 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7379PBFMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
3,616 | - |
RFQ |
Технические |
Tube | HEXFET® | Obsolete | N and P-Channel | Standard | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7389PBFMOSFET N/P-CH 30V 8-SOIC Infineon Technologies |
3,637 | - |
RFQ |
Технические |
Tube,Tube | HEXFET® | Discontinued at Mosen | N and P-Channel | Logic Level Gate | 30V | - | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF8910PBFMOSFET 2N-CH 20V 10A 8-SOIC Infineon Technologies |
3,335 | - |
RFQ |
Технические |
Tube,Tube | HEXFET® | Discontinued at Mosen | 2 N-Channel (Dual) | Logic Level Gate | 20V | 10A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
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