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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
A2V09H400-04NR3 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	2,010	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	720MHz ~ 960MHz	17.9dB	48 V	10µA	-	688 mA	107W	105 V
A3G35H100-04SR3 AIRFAST RF POWER GAN TRANSISTOR NXP USA Inc.	2,203	-	RFQ	Технические	Tape & Reel (TR)	*	Active	-	-	-	-	-	-	-	-	-
A3T18H455W23SR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	2,309	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual)	1.805GHz ~ 1.88GHz	16.7dB	30 V	10µA	-	600 mA	192W	65 V
A2V07H525-04NR6 AIRFAST RF LDMOS WIDEBAND INTEGR NXP USA Inc.	2,595	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	595MHz ~ 851MHz	17.5dB	48 V	10µA	-	700 mA	120W	105 V
A2V09H300-04NR3 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	2,046	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	720MHz ~ 960MHz	19.7dB	48 V	10µA	-	400 mA	53dBm	105 V
A3G26H200W17SR3 AIRFAST RF POWER GAN TRANSISTOR NXP USA Inc.	2,492	-	RFQ	Технические	Tape & Reel (TR)	-	Active	-	2.496GHz ~ 2.69GHz	14.2dB	48 V	-	-	120 mA	34W	125 V
MRFE6VP6300GSR5 FET RF 50V 600MHZ NI780-4 NXP USA Inc.	3,918	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	600MHz	25dB	-	-	-	-	300W	50 V
A2G26H281-04SR3 AIRFAST RF POWER GAN TRANSISTOR NXP USA Inc.	2,341	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	2.496GHz ~ 2.69GHz	14.2dB	48 V	-	-	150 mA	50W	125 V
A2T14H450-23NR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	3,016	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	1.452GHz ~ 1.511GHz	18.8dB	31 V	10µA	-	1 A	-	65 V
A2V09H525-04NR6 AIRFAST RF LDMOS WIDEBAND INTEGR NXP USA Inc.	3,605	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	720MHz ~ 960MHz	18.9dB	48 V	10µA	-	688 mA	120W	105 V
A3V07H600-42NR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	2,979	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Triple)	616MHz ~ 870MHz	16.9dB	48 V	10µA	-	900 mA	112W	105 V
MRFE6VP100HSR5 FET RF 2CH 133V 512MHZ NI780 NXP USA Inc.	2,078	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	512MHz	26dB	50 V	-	-	100 mA	100W	133 V
A3G18D510-04SR3 AIRFAST RF POWER GAN TRANSISTOR NXP USA Inc.	2,806	-	RFQ	Технические	Tape & Reel (TR)	-	Active	-	1.805GHz ~ 2.2GHz	16dB	48 V	-	-	250 mA	56W	125 V
A3G22H400-04SR3 AIRFAST RF POWER GAN TRANSISTOR NXP USA Inc.	2,430	-	RFQ	Технические	Tape & Reel (TR)	*	Active	-	-	-	-	-	-	-	-	-
MRFE6VP6300HSR5 FET RF 2CH 130V 230MHZ NI780S-4 NXP USA Inc.	2,064	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual)	230MHz	26.5dB	50 V	-	-	100 mA	300W	130 V
MRF8S18210WGHSR3 FET RF 65V 1.93GHZ NI880XGS NXP USA Inc.	3,450	-	RFQ	Технические	Tape & Reel (TR)	-	Not For New Designs	N-Channel	1.93GHz	17.8dB	30 V	-	-	1.3 A	50W	65 V
MRF1511NT1 FET RF 40V 175MHZ PLD-1.5 NXP USA Inc.	2,280	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS	175MHz	13dB	7.5 V	4A	-	150 mA	8W	40 V
MRF1513NT1 FET RF 40V 520MHZ PLD-1.5 NXP USA Inc.	2,703	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS	520MHz	15dB	12.5 V	2A	-	50 mA	3W	40 V
MRF1517NT1 FET RF 25V 520MHZ PLD-1.5 NXP USA Inc.	2,675	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS	520MHz	14dB	7.5 V	4A	-	150 mA	8W	25 V
MRF1518NT1 FET RF 40V 520MHZ PLD-1.5 NXP USA Inc.	3,266	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	LDMOS	520MHz	13dB	12.5 V	4A	-	150 mA	8W	40 V