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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
MMRF1020-04NR3 RF MOSFET LDMOS DL 48V OM780-4 NXP USA Inc.	2,172	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Active	LDMOS (Dual)	920MHz	19.5dB	48 V	-	-	860 mA	100W	105 V
MMRF1008GHR5 PULSE LATERAL N-CHANNEL RF POWER NXP USA Inc.	3,198	-	RFQ		Tape & Reel (TR)	-	Active	LDMOS	900MHz ~ 1.215GHz	20.3dB	50 V	100µA	-	100 mA	275W	100 V
A5G38H045N-3700 A5G38H045N 3700-3980 MHZ REFEREN NXP USA Inc.	3,114	-	RFQ		Bulk	-	Active	-	-	-	-	-	-	-	5W	-
MRF6V12250HSR5 FET RF 100V 1.03GHZ NI-780S NXP USA Inc.	2,088	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	1.03GHz	20.3dB	50 V	-	-	100 mA	275W	100 V
A5G35H110N-3400 A5G35H110N 3400-3600 MHZ REFEREN NXP USA Inc.	3,533	-	RFQ	Технические	Bulk	-	Active	-	3.3GHz ~ 3.7GHz	15.3dB	48 V	-	-	70 mA	15.1W	125 V
MRF6V14300HSR5 RF MOSFET LDMOS 50V NI-780S NXP USA Inc.	3,109	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	1.4GHz	18dB	50 V	-	-	150 mA	330W	100 V
MMRF2010GNR1 TRANS RF LDMOS 250W 50V NXP USA Inc.	2,943	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.09GHz	32.1dB	50 V	-	-	80 mA	250W	100 V
MRF6V14300HR5 RF MOSFET LDMOS 50V NI780H NXP USA Inc.	2,111	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	1.4GHz	18dB	50 V	-	-	150 mA	330W	100 V
MRF8P29300HR6 FET RF 2CH 65V 2.9GHZ NI1230 NXP USA Inc.	2,392	-	RFQ		Tape & Reel (TR)	-	Active	LDMOS (Dual)	2.9GHz	13.3dB	30 V	-	-	100 mA	320W	65 V
AFV10700HSR5 RF MOSFET LDMOS DL 50V NI780S-4L NXP USA Inc.	143	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Active	LDMOS (Dual)	1.03GHz ~ 1.09GHz	19.2dB	50 V	10µA	-	100 mA	770W	105 V
AFV10700GSR5 1030MHZ 750W NI780GS-4L NXP USA Inc.	3,628	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual)	1.03GHz ~ 1.09GHz	19.2dB	50 V	10µA	-	100 mA	700W	105 V
MRF6V12500HSR5 FET RF 110V 1.03GHZ NI-1230H NXP USA Inc.	2,964	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	1.03GHz	19.7dB	50 V	-	-	200 mA	500W	110 V
MRF6V12500GSR5 PULSED LATERAL N-CHANNEL RF POWE NXP USA Inc.	3,933	-	RFQ		Tape & Reel (TR)	-	Active	LDMOS	960MHz ~ 1.215GHz	19.7dB	50 V	200µA	-	200 mA	-	110 V
MMRF1009HSR5 FET RF 110V 1.03GHZ NI-780S NXP USA Inc.	2,776	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS	1.03GHz	19.7dB	50 V	-	-	200 mA	500W	110 V
MMRF1009HR5 FET RF 110V 1.03GHZ NI-780S NXP USA Inc.	2,081	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.03GHz	19.7dB	50 V	-	-	200 mA	500W	110 V
AFV141KHR5 IC TRANS RF LDMOS NXP USA Inc.	2,078	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual)	1.4GHz	17.7dB	50 V	-	-	100 mA	1000W	105 V
MMRF1314HR5 TRANS 960-1215MHZ 1000W PEAK 50V NXP USA Inc.	2,146	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	1.4GHz	17.7dB	50 V	-	-	100 mA	1000W	105 V
AFV141KHSR5 IC TRANS RF LDMOS NXP USA Inc.	2,497	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual)	1.4GHz	17.7dB	50 V	-	-	100 mA	1000W	105 V
AFV141KGSR5 IC TRANS RF LDMOS NXP USA Inc.	2,047	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual)	1.4GHz	17.7dB	50 V	-	-	100 mA	1000W	105 V
MMRF1314GSR5 TRANS 960-1215MHZ 1000W PEAK 50V NXP USA Inc.	2,743	-	RFQ	Технические	Tape & Reel (TR)	-	Active	LDMOS (Dual)	1.4GHz	17.7dB	50 V	-	-	100 mA	1000W	105 V