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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
BLF7G27LS-90P,112 RF PFET, 2-ELEMENT, S BAND, SILI NXP USA Inc.	3,341	-	RFQ	Технические	Tube	-	Active	LDMOS (Dual), Common Source	2.5GHz ~ 2.7GHz	18.5dB	28 V	18A	-	720 mA	16W	65 V
BLF8G10LS-270,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	3,734	-	RFQ	Технические	Tube	-	Active	LDMOS	820MHz ~ 960MHz	18.5dB	28 V	4.2µA	-	2 A	270W	65 V
BLF6G20-110,112 RF TRANSISTOR NXP USA Inc.	2,711	-	RFQ	Технические	Tray	-	Obsolete	LDMOS	1.93GHz ~ 1.99GHz	19dB	28 V	29A	-	900 mA	25W	65 V
BLF7G27L-100,112 RF TRANSISTOR NXP USA Inc.	3,653	-	RFQ	Технические	Tube	-	Obsolete	LDMOS	2.5GHz ~ 2.7GHz	18dB	28 V	28A	-	900 mA	20W	65 V
BLF6G27LS-75,112 RF TRANSISTOR NXP USA Inc.	2,643	-	RFQ	Технические	Tray	-	Obsolete	LDMOS	-	-	28 V	18A	-	600 mA	9W	65 V
BLF8G10LS-270V,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	2,769	-	RFQ	Технические	Tube	-	Active	LDMOS	871.5MHz ~ 891.5MHz	19.5dB	28 V	-	-	2 A	67W	65 V
BLD6G22L-50,112 RF TRANSISTOR NXP USA Inc.	2,624	-	RFQ	Технические	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.14GHz	14dB	28 V	10.2A	-	170 mA	8W	65 V
BLD6G21L-50,112 RF TRANSISTOR NXP USA Inc.	3,624	-	RFQ	Технические	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.02GHz	14.5dB	28 V	10.2A	-	170 mA	8W	65 V
CLF1G0060S-10U RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc.	2,677	-	RFQ	Технические	Bulk	-	Active	GaN HEMT	3GHz ~ 3.5GHz	14.5dB	50 V	-	-	50 mA	10W	150 V
BLF6G10LS-135R,112 RF TRANSISTOR NXP USA Inc.	2,789	-	RFQ	Технические	Tray	-	Obsolete	LDMOS	871.5MHz ~ 891.5MHz	21dB	28 V	32A	-	950 mA	26.5W	65 V
BLD6G22LS-50,112 RF TRANSISTOR NXP USA Inc.	2,189	-	RFQ	Технические	Tray	-	Obsolete	LDMOS (Dual), Common Source	2.14GHz	14dB	28 V	10.2A	-	170 mA	8W	65 V
BLF7G10L-250,112 RF PFET, 1-ELEMENT, ULTRA HIGH F NXP USA Inc.	3,927	-	RFQ	Технические	Tube	-	Active	LDMOS	920MHz ~ 960MHz	19.5dB	30 V	-	-	1.8 A	60W	65 V
BLF7G10LS-250,112 N-CHANNEL, MOSFET NXP USA Inc.	2,458	-	RFQ	Технические	Tube	-	Active	LDMOS	869MHz ~ 960MHz	19.5dB	30 V	5µA	-	1.8 A	250W	65 V
BLF7G27LS-140,112 RF PFET, 1-ELEMENT, S BAND, SILI NXP USA Inc.	2,714	-	RFQ	Технические	Tube	-	Active	LDMOS	2.5GHz ~ 2.7GHz	16.5dB	28 V	28A	-	1.3 A	30W	65 V
BLF7G27L-150P,112 RF TRANSISTOR NXP USA Inc.	3,548	-	RFQ	Технические	Tube	-	Obsolete	LDMOS (Dual), Common Source	2.5GHz ~ 2.7GHz	16.5dB	28 V	37A	-	1.2 A	30W	65 V
BLF7G24L-160P,112 RF TRANSISTOR NXP USA Inc.	3,376	-	RFQ	Технические	Tube	-	Obsolete	LDMOS (Dual), Common Source	2.3GHz ~ 2.4GHz	18.5dB	28 V	-	-	1.2 A	30W	65 V
BLF2425M7LS140,112 RF PFET, 1-ELEMENT, S BAND, SILI NXP USA Inc.	3,641	-	RFQ	Технические	Tube	-	Active	LDMOS	2.45GHz	18.5dB	28 V	-	-	1.3 A	140W	65 V
BLF7G24LS-160P,112 RF PFET, 2-ELEMENT, S BAND, SILI NXP USA Inc.	2,329	-	RFQ	Технические	Tube	-	Active	LDMOS (Dual), Common Source	2.3GHz ~ 2.4GHz	18.5dB	28 V	-	-	1.2 A	30W	65 V
BLF7G22LS-250P,112 N-CHANNEL, MOSFET NXP USA Inc.	3,403	-	RFQ	Технические	Tube	-	Active	LDMOS (Dual), Common Source	2.11GHz ~ 2.17GHz	18.5dB	28 V	2.8µA	-	1.9 A	250W	65 V
MRF6VP3450HSR5-NXP RF ULTRA HIGH FREQUENCY BAND, N- NXP USA Inc.	2,040	-	RFQ	Технические	Bulk	-	Active	LDMOS (Dual)	470MHz ~ 860MHz	22.5dB	50 V	10µA	-	1.4 A	450W	110 V