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Транзисторы - FET, MOSFET - RF

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
BLU6H0410L-600P,11 RF FET LDMOS 110V 21DB SOT539A Ampleon USA Inc.	3,293	-	RFQ	Технические	Tray	-	Active	LDMOS (Dual), Common Source	860MHz	21dB	50 V	-	-	1.3 A	250W	110 V
BLU6H0410LS-600P,1 RF FET LDMOS 110V 21DB SOT539B Ampleon USA Inc.	3,411	-	RFQ	Технические	Tray	-	Active	LDMOS (Dual), Common Source	860MHz	21dB	50 V	-	-	1.3 A	250W	110 V
CGHV35060MP-AMP1 2.7-3.8GHZ, AMP W/ CGHV35060MP Wolfspeed, Inc.	2,414	-	RFQ	Технические	Bulk	GaN	Active	HEMT	2.7GHz ~ 3.8GHz	14.5dB	50 V	-	-	125 mA	60W	150 V
VRF157FLMP RF MOSFET N-CHANNEL 50V 4SMD Microchip Technology	3,176	-	RFQ	Технические	Tube	-	Active	N-Channel	80MHz	21dB	50 V	4mA	-	800 mA	600W	170 V
BLA6H0912LS-1000U RF FET LDMOS 100V 15.5DB SOT539B Ampleon USA Inc.	3,649	-	RFQ	Технические	Tray	-	Not For New Designs	LDMOS (Dual), Common Source	1.03GHz	15.5dB	50 V	-	-	200 mA	1000W	100 V
GTVA107001FC-V1-R0 700W GAN HEMT, 50V, 0.9-1.2GHZ Wolfspeed, Inc.	2,716	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)	GaN	Active	HEMT	1.4GHz	20dB	50 V	-	-	100 mA	700W	125 V
CGHV40180F-AMP3 960-1250MHZ, AMP W/ CGHV40180F Wolfspeed, Inc.	2,632	-	RFQ	Технические	Bulk	GaN	Active	HEMT	2GHz	25.6dB	50 V	-	-	1 A	180W	150 V
CGHV40200PP-AMP1 1.7-1.9GHZ, AMP W/ CGHV40200PP Wolfspeed, Inc.	3,011	-	RFQ	Технические	Bulk	GaN	Active	HEMT	1.5GHz ~ 2GHz	21.7dB	50 V	-	-	1.2 A	200W	150 V
IGT1112M90 GAN, RF POWER TRANSISTOR, X-BAND Integra Technologies Inc.	3,158	-	RFQ	Технические	Tray	*	Active	-	-	-	-	-	-	-	-	-
CGHV96130F-AMP 8.4-9.6GHZ, AMP W/ CGHV96100F2 Wolfspeed, Inc.	3,231	-	RFQ	Технические	Bulk	GaN	Active	HEMT	8.4GHz ~ 9.6GHz	13.8dB	40 V	-	-	1 A	130W	120 V
CLF1G0035-100,112 RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc.	2,760	-	RFQ	Технические	Bulk	-	Active	GaN HEMT	3GHz	12dB	50 V	-	-	330 mA	100W	150 V
MRF6S27050HSR3 RF S BAND, N-CHANNEL POWER MOSFE Freescale Semiconductor	2,327	-	RFQ	Технические	Bulk	-	Obsolete	LDMOS	2.62GHz	16dB	28 V	-	-	500 mA	7W	68 V
ON5452,518 ON5452 - RF POWER MOSFET Nexperia USA Inc.	3,352	-	RFQ		Bulk	-	Active	-	-	-	-	-	-	-	-	-
BLF2425M8LS140112 NOW AMPLEON, BLF2425M8LS140, POW NXP USA Inc.	3,778	-	RFQ		Bulk	-	Active	LDMOS	2.45GHz	19dB	28 V	-	-	1.3 A	140W	65 V
MRF6V3090NBR1 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	2,836	-	RFQ	Технические	Bulk	-	Active	LDMOS	860MHz	22dB	50 V	-	-	350 mA	18W	110 V
MRF6P21190HR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	2,846	-	RFQ		Bulk	-	Obsolete	LDMOS	2.12GHz	15.5dB	28 V	-	-	1.9 A	44W	68 V
MRF6S9045NR1 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	3,723	-	RFQ	Технические	Bulk	-	Obsolete	LDMOS	880MHz	22.7dB	28 V	-	-	350 mA	10W	68 V
MRF6VP11KHR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	2,078	-	RFQ	Технические	Bulk	-	Active	LDMOS (Dual)	130MHz	26dB	50 V	-	-	150 mA	1000W	110 V
ON5233,118 ON5233 - RF MOSFET Nexperia USA Inc.	3,218	-	RFQ		Bulk	-	Active	-	-	-	-	-	-	-	-	-
MRF24300NR3 RF POWER LDMOS TRANSISTOR Freescale Semiconductor	3,859	-	RFQ	Технические	Bulk	-	Active	LDMOS	2.45GHz	13.1dB	32 V	-	-	100 mA	330W	65 V