| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RMW280N03TBMOSFET N-CH 30V 28A 8PSOP Rohm Semiconductor |
3,049 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta) | 4.5V, 10V | 2.8mOhm @ 28A, 10V | 2.5V @ 1mA | 53 nC @ 10 V | ±20V | 3130 pF @ 15 V | - | 3W (Ta) | 150°C (TJ) | Surface Mount |
|
IRFR812PBFMOSFET N-CH 500V 3.6A DPAK Infineon Technologies |
2,221 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±20V | 810 pF @ 25 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFR825PBFMOSFET N-CH 500V 6A DPAK Infineon Technologies |
3,956 | - |
RFQ |
Технические |
Tube | HEXFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 1.3Ohm @ 3.7A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±20V | 1346 pF @ 25 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLH7134TRPBFMOSFET N-CH 40V 26A/85A 8PQFN Infineon Technologies |
3,117 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Ta), 85A (Tc) | 4.5V, 10V | 3.3mOhm @ 50A, 10V | 2.5V @ 100µA | 58 nC @ 4.5 V | ±16V | 3720 pF @ 25 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLH7134TR2PBFMOSFET N-CH 40V 26A 8PQFN Infineon Technologies |
3,715 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Ta), 85A (Tc) | - | 3.3mOhm @ 50A, 10V | 2.5V @ 100µA | 58 nC @ 4.5 V | - | 3720 pF @ 25 V | - | - | - | Surface Mount |
|
IRFH7107TRPBFMOSFET N-CH 75V 14A/75A 8PQFN Infineon Technologies |
3,228 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 14A (Ta), 75A (Tc) | 10V | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 72 nC @ 10 V | ±20V | 3110 pF @ 25 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFH7107TR2PBFMOSFET N-CH 75V 14A 8PQFN Infineon Technologies |
2,992 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 14A (Ta), 75A (Tc) | - | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 72 nC @ 10 V | - | 3110 pF @ 25 V | - | - | - | Surface Mount |
|
STB15N65M5MOSFET N-CH 650V 11A D2PAK STMicroelectronics |
3,275 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | MDmesh™ V | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 810 pF @ 100 V | - | 85W (Tc) | 150°C (TJ) | Surface Mount |
|
BSC205N10LS GMOSFET N-CH 100V 7.4A/45A TDSON Infineon Technologies |
3,400 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.4A (Ta), 45A (Tc) | 4.5V, 10V | 20.5mOhm @ 45A, 10V | 2.4V @ 43µA | 41 nC @ 10 V | ±20V | 2900 pF @ 50 V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC240N12NS3 GMOSFET N-CH 120V 37A TDSON-8-1 Infineon Technologies |
714 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 37A (Tc) | 10V | 24mOhm @ 31A, 10V | 4V @ 35µA | 27 nC @ 10 V | ±20V | 1900 pF @ 60 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC882N03MSGATMA1MOSFET N-CH 34V 22A/100A TDSON Infineon Technologies |
35,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34 V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC883N03MSGATMA1MOSFET N-CH 34V 19A/98A TDSON Infineon Technologies |
3,175 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34 V | 19A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2V @ 250µA | 41 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC884N03MS GMOSFET N-CH 34V 17A/85A TDSON Infineon Technologies |
5,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34 V | 17A (Ta), 85A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 34 nC @ 10 V | ±20V | 2700 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC889N03LSGATMA1MOSFET N-CH 30V 13A/45A TDSON Infineon Technologies |
3,675 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 45A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 16 nC @ 10 V | ±20V | 1300 pF @ 15 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC889N03MSGATMA1MOSFET N-CH 30V 12A 44A TDSON Infineon Technologies |
2,849 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) 44A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
BSF077N06NT3GXUMA1MOSFET N-CH 60V 13A/56A 2WDSON Infineon Technologies |
3,221 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 56A (Tc) | 10V | 7.7mOhm @ 30A, 10V | 4V @ 33µA | 46 nC @ 10 V | ±20V | 3700 pF @ 30 V | - | 2.2W (Ta), 38W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRF3710ZSPBFHEXFET POWER MOSFET International Rectifier |
2,602 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SPD08N50C3COOLMOS, 7.6A, 500V, 0.6OHM, N-C Infineon Technologies |
3,726 | - |
RFQ |
Технические |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPI80N04S2-04N-CHANNEL POWER MOSFET Infineon Technologies |
2,823 | - |
RFQ |
Технические |
Bulk | * | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
NVMFS005N10MCLT1GPTNG 100V LL SO8FL onsemi |
2,937 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18.4A (Ta), 108A (Tc) | 4.5V, 10V | 5.1mOhm @ 34A, 10V | 3V @ 192µA | 55 nC @ 10 V | ±20V | 4100 pF @ 50 V | - | 3.8W (Ta), 131W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |