Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB041N04NGATMA1

IPB041N04NGATMA1

MOSFET N-CH 40V 80A D2PAK

Infineon Technologies
3,205 -

RFQ

IPB041N04NGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 45µA 56 nC @ 10 V ±20V 4500 pF @ 20 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB049N06L3GATMA1

IPB049N06L3GATMA1

MOSFET N-CH 60V 80A D2PAK

Infineon Technologies
3,764 -

RFQ

IPB049N06L3GATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2.2V @ 58µA 50 nC @ 4.5 V ±20V 8400 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB052N04NGATMA1

IPB052N04NGATMA1

MOSFET N-CH 40V 70A D2PAK

Infineon Technologies
3,203 -

RFQ

IPB052N04NGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 5.2mOhm @ 70A, 10V 4V @ 33µA 42 nC @ 10 V ±20V 3300 pF @ 20 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB065N15N3GE8187ATMA1

IPB065N15N3GE8187ATMA1

MOSFET N-CH 150V 130A TO263-7

Infineon Technologies
2,726 -

RFQ

IPB065N15N3GE8187ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 8V, 10V 6.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7300 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB072N15N3GE8187ATMA1

IPB072N15N3GE8187ATMA1

MOSFET N-CH 150V 100A TO263-3

Infineon Technologies
2,018 -

RFQ

IPB072N15N3GE8187ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.2mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB075N04LGATMA1

IPB075N04LGATMA1

MOSFET N-CH 40V 50A D2PAK

Infineon Technologies
3,914 -

RFQ

IPB075N04LGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 50A, 10V 2V @ 20µA 36 nC @ 10 V ±20V 2800 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB080N03LGATMA1

IPB080N03LGATMA1

MOSFET N-CH 30V 50A D2PAK

Infineon Technologies
15,323 -

RFQ

IPB080N03LGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1900 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB093N04LGATMA1

IPB093N04LGATMA1

MOSFET N-CH 40V 50A D2PAK

Infineon Technologies
3,516 -

RFQ

IPB093N04LGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 9.3mOhm @ 50A, 10V 2V @ 16µA 28 nC @ 10 V ±20V 2100 pF @ 20 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB097N08N3 G

IPB097N08N3 G

MOSFET N-CH 80V 70A D2PAK

Infineon Technologies
3,839 -

RFQ

IPB097N08N3 G

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 9.7mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB136N08N3 G

IPB136N08N3 G

MOSFET N-CH 80V 45A D2PAK

Infineon Technologies
2,644 -

RFQ

IPB136N08N3 G

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.6mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB230N06L3GATMA1

IPB230N06L3GATMA1

MOSFET N-CH 60V 30A D2PAK

Infineon Technologies
3,706 -

RFQ

IPB230N06L3GATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 23mOhm @ 30A, 10V 2.2V @ 11µA 10 nC @ 4.5 V ±20V 1600 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB260N06N3GATMA1

IPB260N06N3GATMA1

MOSFET N-CH 60V 27A D2PAK

Infineon Technologies
2,595 -

RFQ

IPB260N06N3GATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 27A (Tc) 10V 25.7mOhm @ 27A, 10V 4V @ 11µA 15 nC @ 10 V ±20V 1200 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R299CPATMA1

IPB60R299CPATMA1

MOSFET N-CH 600V 11A TO263-3

Infineon Technologies
3,859 -

RFQ

IPB60R299CPATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R385CPATMA1

IPB60R385CPATMA1

MOSFET N-CH 600V 9A TO263-3

Infineon Technologies
3,508 -

RFQ

IPB60R385CPATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQU6N40CTU

FQU6N40CTU

MOSFET N-CH 400V 4.5A IPAK

Fairchild Semiconductor
3,191 -

RFQ

FQU6N40CTU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1Ohm @ 2.25A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP6N50

FQP6N50

MOSFET N-CH 500V 5.5A TO220-3

Fairchild Semiconductor
3,648 -

RFQ

FQP6N50

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD20AN06A0

FDD20AN06A0

MOSFET N-CH 60V 8A/45A TO252AA

Fairchild Semiconductor
2,669 -

RFQ

FDD20AN06A0

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 950 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75309D3S

HUF75309D3S

MOSFET N-CH 55V 19A DPAK

Harris Corporation
2,400 -

RFQ

HUF75309D3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 70mOhm @ 19A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDS356P

NDS356P

MOSFET P-CH 20V 1.1A SUPERSOT3

Fairchild Semiconductor
3,993 -

RFQ

NDS356P

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.1A (Ta) 4.5V, 10V 210mOhm @ 1.3A, 10V 2.5V @ 250µA 5 nC @ 5 V ±12V 180 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUF76629D3S

HUF76629D3S

MOSFET N-CH 100V 20A TO252AA

Harris Corporation
2,766 -

RFQ

HUF76629D3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1285 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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