Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB039N10N3GE8197ATMA1

IPB039N10N3GE8197ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
2,062 -

RFQ

IPB039N10N3GE8197ATMA1

Технические

Bulk * Active - - - - - - - - - - - - - -
HAT3008RJ-EL

HAT3008RJ-EL

N & P CHANNEL MOSFET

Renesas Electronics America Inc
3,544 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB100P03P3L-04

IPB100P03P3L-04

P-CHANNEL POWER MOSFET

Infineon Technologies
3,535 -

RFQ

IPB100P03P3L-04

Технические

Bulk * Active - - - - - - - - - - - - - -
AUIRLU3110Z

AUIRLU3110Z

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
2,954 -

RFQ

AUIRLU3110Z

Технические

Tube,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V - 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLZ44Z

AUIRLZ44Z

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
977 -

RFQ

AUIRLZ44Z

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLZ44ZL

AUIRLZ44ZL

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
3,028 -

RFQ

AUIRLZ44ZL

Технические

Tube,Tube - Obsolete - - - 51A (Tc) 4.5V, 10V - - - ±16V - - - -55°C ~ 175°C (TJ) Through Hole
AUIRLZ44ZS

AUIRLZ44ZS

MOSFET N-CH 55V 51A SMD DPAK

Infineon Technologies
2,277 -

RFQ

AUIRLZ44ZS

Технические

Tube - Obsolete - - - 51A (Tc) 4.5V, 10V - - - ±16V - - - -55°C ~ 175°C (TJ) Surface Mount
IRF1902GPBF

IRF1902GPBF

MOSFET N-CH 20V 4.2A 8SO

Infineon Technologies
2,303 -

RFQ

IRF1902GPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) - 85mOhm @ 4A, 4.5V 700mV @ 250µA 7.5 nC @ 4.5 V - 310 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IRF3710ZGPBF

IRF3710ZGPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies
2,686 -

RFQ

IRF3710ZGPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250mA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4104GPBF

IRF4104GPBF

MOSFET N CH 40V 75A TO220AB

Infineon Technologies
2,518 -

RFQ

IRF4104GPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIA448DJ-T1-GE3

SIA448DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

Vishay Siliconix
2,535 -

RFQ

SIA448DJ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.5V, 4.5V 15mOhm @ 12.4A, 4.5V 1V @ 250µA 35 nC @ 8 V ±8V 1380 pF @ 1 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3442CDV-T1-GE3

SI3442CDV-T1-GE3

MOSFET N-CH 20V 8A 6TSOP

Vishay Siliconix
3,119 -

RFQ

SI3442CDV-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 2.5V, 10V 27mOhm @ 6.5A, 10V 1.5V @ 250µA 14 nC @ 10 V ±12V 335 pF @ 10 V - 1.7W (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDD04N60ZT4G

NDD04N60ZT4G

MOSFET N-CH 600V 4.1A DPAK

onsemi
3,989 -

RFQ

NDD04N60ZT4G

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.1A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 29 nC @ 10 V ±30V 640 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB096N03LG

IPB096N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,042 -

RFQ

IPB096N03LG

Технические

Bulk * Active - - - - - - - - - - - - - -
BSO130N03MSG

BSO130N03MSG

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,603 -

RFQ

BSO130N03MSG

Технические

Bulk * Active - - - - - - - - - - - - - -
BSO080P03NS3 G

BSO080P03NS3 G

P-CHANNEL POWER MOSFET

Infineon Technologies
3,891 -

RFQ

BSO080P03NS3 G

Технические

Bulk * Active - - - - - - - - - - - - - -
2SK3454-AZ

2SK3454-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,645 -

RFQ

2SK3454-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
BSP317PL6327

BSP317PL6327

P-CHANNEL MOSFET

Infineon Technologies
2,553 -

RFQ

BSP317PL6327

Технические

Bulk * Active - - - - - - - - - - - - - -
IPB025N08N3 G

IPB025N08N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,829 -

RFQ

IPB025N08N3 G

Технические

Bulk * Active - - - - - - - - - - - - - -
NTD4806NT4G

NTD4806NT4G

MOSFET N-CH 30V 11.3A/79A DPAK

onsemi
82,082 -

RFQ

NTD4806NT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta), 79A (Tc) 4.5V, 11.5V 6mOhm @ 30A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2142 pF @ 12 V - 1.4W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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