Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDB8870

FDB8870

MOSFET N-CH 30V 23A/160A TO263AB

onsemi
61,588 -

RFQ

FDB8870

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 160A (Tc) 4.5V, 10V 3.9mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDB6030PL

NDB6030PL

MOSFET P-CH 30V 30A D2PAK

onsemi
2,466 -

RFQ

NDB6030PL

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 25mOhm @ 19A, 10V 2V @ 250µA 36 nC @ 5 V ±16V 1570 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Surface Mount
IPB031NE7N3 G

IPB031NE7N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
2,349 -

RFQ

IPB031NE7N3 G

Технические

Bulk * Active - - - - - - - - - - - - - -
FDD6680AS

FDD6680AS

MOSFET N-CH 30V 55A TO252

onsemi
2,074 -

RFQ

FDD6680AS

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench®, SyncFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V 3V @ 1mA 29 nC @ 10 V ±20V 1200 pF @ 15 V - 60W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTD2955PT4G

NTD2955PT4G

MOSFET P-CH 60V 12A DPAK

onsemi
2,974 -

RFQ

NTD2955PT4G

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 10V 180mOhm @ 6A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 750 pF @ 25 V - 55W (Tj) -55°C ~ 175°C (TJ) Surface Mount
2SK3495

2SK3495

N-CHANNEL SMALL SIGNAL MOSFET

onsemi
3,991 -

RFQ

2SK3495

Технические

Bulk * Active - - - - - - - - - - - - - -
NTD4805NT4G

NTD4805NT4G

MOSFET N-CH 30V 12.7A/95A DPAK

onsemi
343,024 -

RFQ

NTD4805NT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.7A (Ta), 95A (Tc) 4.5V, 11.5V 5mOhm @ 30A, 10V 2.5V @ 250µA 48 nC @ 11.5 V ±20V 2865 pF @ 12 V - 1.41W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R385CP

IPB60R385CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,909 -

RFQ

IPB60R385CP

Технические

Bulk * Active - - - - - - - - - - - - - -
NTD4909NT4G

NTD4909NT4G

MOSFET N-CH 30V 8.8A/41A DPAK

onsemi
2,648 -

RFQ

NTD4909NT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V ±20V 1314 pF @ 15 V - 1.37W (Ta), 29.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC205N10LSG

BSC205N10LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,571 -

RFQ

BSC205N10LSG

Технические

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 7.4A (Ta), 45A (Tc) 4.5V, 10V 20.5mOhm @ 45A, 10V 2.4V @ 43µA 41 nC @ 10 V ±20V 2900 pF @ 50 V - 76W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4823NT1G

NTMFS4823NT1G

MOSFET N-CH 30V 6.9A/30A 5DFN

onsemi
132,000 -

RFQ

NTMFS4823NT1G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 30A (Tc) 4.5V, 11.5V 10.6mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 11.5 V ±20V 795 pF @ 15 V - 860mW (Ta), 32.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R520CP

IPD60R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
2,126 -

RFQ

IPD60R520CP

Технические

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4835NT1G

NTMFS4835NT1G

MOSFET N-CH 30V 13A/130A 5DFN

onsemi
892,107 -

RFQ

NTMFS4835NT1G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 130A (Tc) 4.5V, 11.5V 3.5mOhm @ 30A, 10V 2.5V @ 250µA 52 nC @ 11.5 V ±20V 3100 pF @ 12 V - 890mW (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD160N04LG

IPD160N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,918 -

RFQ

IPD160N04LG

Технические

Bulk * Active - - - - - - - - - - - - - -
NTMFS4839NHT1G

NTMFS4839NHT1G

MOSFET N-CH 30V 9.5A/64A 5DFN

onsemi
735,321 -

RFQ

NTMFS4839NHT1G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 64A (Tc) 4.5V, 11.5V 5.5mOhm @ 30A, 10V 2.5V @ 250µA 43.5 nC @ 11.5 V ±20V 2354 pF @ 12 V - 870mW (Ta), 42.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD30N06S3-24

IPD30N06S3-24

N-CHANNEL POWER MOSFET

Infineon Technologies
2,213 -

RFQ

IPD30N06S3-24

Технические

Bulk * Active - - - - - - - - - - - - - -
NTMFS4845NT1G

NTMFS4845NT1G

MOSFET N-CH 30V 13.7A/115A 5DFN

onsemi
2,317 -

RFQ

NTMFS4845NT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.7A (Ta), 115A (Tc) 4.5V, 10V 2.9mOhm @ 30A, 10V 2.5V @ 250µA 62 nC @ 11.5 V ±16V 3720 pF @ 12 V - 890mW (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSD816SNL6327

BSD816SNL6327

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies
2,312 -

RFQ

BSD816SNL6327

Технические

Bulk * Active - - - - - - - - - - - - - -
NTMFS4846NT1G

NTMFS4846NT1G

MOSFET N-CH 30V 12.7A/100A 5DFN

onsemi
50,133 -

RFQ

NTMFS4846NT1G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.7A (Ta), 100A (Tc) 4.5V, 11.5V 3.4mOhm @ 30A, 10V 2.5V @ 250µA 53 nC @ 11.5 V ±20V 3250 pF @ 12 V - 890mW (Ta), 55.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MTB75N06HD

MTB75N06HD

N-CHANNEL POWER MOSFET

onsemi
2,919 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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