Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS7430-7PPBF

IRFS7430-7PPBF

HEXFET POWER MOSFET

International Rectifier
2,329 -

RFQ

IRFS7430-7PPBF

Технические

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 6V, 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7805PBF

IRF7805PBF

MOSFET N-CH 30V 13A 8SO

International Rectifier
3,036 -

RFQ

IRF7805PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9620

IRF9620

3.5A, 200V, 1.500 OHM, P-CHANNEL

Harris Corporation
2,192 -

RFQ

IRF9620

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLL3303PBF

IRLL3303PBF

MOSFET N-CH 30V 4.6A SOT223

International Rectifier
3,854 -

RFQ

IRLL3303PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) - 31mOhm @ 4.6A, 10V 1V @ 250µA 50 nC @ 10 V ±16V 840 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFBA90N20DPBF

IRFBA90N20DPBF

IRFBA90N20 - SMPS HEXFET

International Rectifier
2,695 -

RFQ

IRFBA90N20DPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 98A (Tc) 10V 23mOhm @ 59A, 10V 5V @ 250µA 240 nC @ 10 V ±30V 6080 pF @ 25 V - 650W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6894MTRPBF

IRF6894MTRPBF

25V 999A DIRECTFET-LV

International Rectifier
3,911 -

RFQ

IRF6894MTRPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.3mOhm @ 33A, 10V 2.1V @ 100µA 39 nC @ 4.5 V ±16V 4160 pF @ 13 V Schottky Diode (Body) 2.1W (Ta), 54W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NTMFS008N12MCT1G

NTMFS008N12MCT1G

SINGLE N-CHANNEL POWER MOSFET 12

onsemi
3,472 -

RFQ

NTMFS008N12MCT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 120 V 12A (Ta), 79A (Tc) 6V, 10V 8mOhm @ 36A, 10V 4V @ 200µA 33 nC @ 10 V ±20V 2705 pF @ 60 V - 2.7W (Ta), 102W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MCB200N06YA-TP

MCB200N06YA-TP

N-CHANNEL MOSFET, D2-PAK

Micro Commercial Co
3,626 -

RFQ

MCB200N06YA-TP

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 200A 6V, 10V 3.2mOhm @ 20A, 10V 3.8V @ 250µA 65 nC @ 10 V ±20V 4165 pF @ 25 V - 260W (Tj) -55°C ~ 150°C (TJ) Surface Mount
IRFL014NPBF

IRFL014NPBF

MOSFET N-CH 55V 1.9A SOT223

International Rectifier
3,713 -

RFQ

IRFL014NPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 1.9A (Ta) - 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFIB41N15DPBF

IRFIB41N15DPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
3,687 -

RFQ

IRFIB41N15DPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±20V 2520 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR120ZPBF

IRFR120ZPBF

MOSFET N-CH 100V 8.7A DPAK

International Rectifier
3,298 -

RFQ

IRFR120ZPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) - 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RSS095N05HZGTB

RSS095N05HZGTB

NCH 45V 9.5A POWER MOSFET: RSS09

Rohm Semiconductor
3,427 -

RFQ

RSS095N05HZGTB

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 45 V 9.5A (Ta) 4V, 10V 16mOhm @ 9.5A, 10V 2.5V @ 1mA 26.5 nC @ 5 V ±20V 1830 pF @ 10 V - 1.4W (Ta) 150°C (TJ) Surface Mount
MCB200N06Y-TP

MCB200N06Y-TP

N-CHANNEL MOSFET, D2-PAK

Micro Commercial Co
3,243 -

RFQ

MCB200N06Y-TP

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V 2.2V @ 250µA 93 nC @ 10 V ±20V 5950 pF @ 25 V - 260W (Tj) -55°C ~ 150°C (TJ) Surface Mount
BSZ076N06NS3G

BSZ076N06NS3G

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,932 -

RFQ

BSZ076N06NS3G

Технические

Bulk * Active - - - - - - - - - - - - - -
AUIRF3805L-7P

AUIRF3805L-7P

AUTOMOTIVE N CHANNEL

International Rectifier
3,933 -

RFQ

AUIRF3805L-7P

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR3607

AUIRFR3607

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,866 -

RFQ

AUIRFR3607

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL4010

AUIRFSL4010

AUTOMOTIVE POWER MOSFET

International Rectifier
3,533 -

RFQ

AUIRFSL4010

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V - 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3707ZPBF

IRFU3707ZPBF

IRFU3707 - HEXFET N-CHANNEL

International Rectifier
2,065 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 25µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD15N60DM6

STD15N60DM6

MOSFET N-CH 600V 12A DPAK

STMicroelectronics
3,729 -

RFQ

STD15N60DM6

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 338mOhm @ 6A, 10V 4.75V @ 250µA 15.3 nC @ 10 V ±25V 607 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL1404SPBF

IRL1404SPBF

HEXFET POWER MOSFET

International Rectifier
2,450 -

RFQ

IRL1404SPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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