Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NP180N04TUG-E1-AY

NP180N04TUG-E1-AY

180A, 40V, N-CHANNEL MOSFET

Renesas Electronics America Inc
2,345 -

RFQ

NP180N04TUG-E1-AY

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.5mOhm @ 90A, 10V 4V @ 250µA 390 nC @ 10 V ±20V 25700 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C (TJ) Surface Mount
AUIRFR1010ZTRL

AUIRFR1010ZTRL

AUTOMOTIVE N CHANNEL

International Rectifier
2,177 -

RFQ

AUIRFR1010ZTRL

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD2002T4

STD2002T4

NFET DPAK SPCL 60V TR

Motorola
3,852 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFS31N20DTRLP

IRFS31N20DTRLP

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,730 -

RFQ

IRFS31N20DTRLP

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DPBF

IRFS31N20DPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,091 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6621TRPBF

IRF6621TRPBF

30V SINGLE N-CHANNEL HEXFET

International Rectifier
2,268 -

RFQ

IRF6621TRPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 55A (Tc) 4.5V, 10V 9.1mOhm @ 12A, 10V 2.25V @ 250µA 17.5 nC @ 4.5 V ±20V 1460 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF640NSTRRPBF

IRF640NSTRRPBF

IRF640 - HEXFET POWER MOSFET

International Rectifier
3,067 -

RFQ

IRF640NSTRRPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7739L2TRPBF

IRF7739L2TRPBF

DIRECTFET POWER MOSFET

International Rectifier
2,528 -

RFQ

IRF7739L2TRPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 375A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7834PBF

IRF7834PBF

MOSFET N-CH 30V 19A 8SO

International Rectifier
3,442 -

RFQ

IRF7834PBF

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) - 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R380E6BTMA1

IPD60R380E6BTMA1

COOLMOS N-CHANNEL POWER MOSFET

International Rectifier
3,624 -

RFQ

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V Super Junction 83W (Tc) -55°C ~ 155°C (TJ) Surface Mount
IPA60R299CP

IPA60R299CP

600V COOLMOS POWER TRANSISTOR

Infineon Technologies
3,794 -

RFQ

IPA60R299CP

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR2905PBF

IRLR2905PBF

HEXFET POWER MOSFET

International Rectifier
2,097 -

RFQ

IRLR2905PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB59N10DPBF

IRFB59N10DPBF

SMPS HEXFET POWER MOSFET

International Rectifier
3,106 -

RFQ

IRFB59N10DPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR15N20DPBF

IRFR15N20DPBF

HEXFET SMPS POWER MOSFET

International Rectifier
3,237 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 10V 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 910 pF @ 25 V - 3W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1010ZS

AUIRF1010ZS

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
2,869 -

RFQ

AUIRF1010ZS

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC120N06S5N017ATMA1

IAUC120N06S5N017ATMA1

MOSFET N-CH 60V 120A TDSON-8-43

Infineon Technologies
2,632 -

RFQ

IAUC120N06S5N017ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tj) - 1.7mOhm @ 60A, 10V 3.4V @ 94µA 95.9 nC @ 10 V ±20V 6952 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7530-7PPBF

IRFS7530-7PPBF

MOSFET N-CH 60V 240A D2PAK

International Rectifier
2,555 -

RFQ

IRFS7530-7PPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) - 1.4mOhm @ 100A, 10V 3.7V @ 250µA 354 nC @ 10 V ±20V 12960 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7148DP-T1-E3

SI7148DP-T1-E3

MOSFET N-CH 75V 28A PPAK SO-8

Vishay Siliconix
2,877 -

RFQ

SI7148DP-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 28A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 2900 pF @ 35 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7846DP-T1-E3

SI7846DP-T1-E3

MOSFET N-CH 150V 4A PPAK SO-8

Vishay Siliconix
2,720 -

RFQ

SI7846DP-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta) 10V 50mOhm @ 5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7469PBF

IRF7469PBF

MOSFET

International Rectifier
2,969 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V 3V @ 250µA 23 nC @ 4.5 V ±20V 2000 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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