Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT33N90JCCU3

APT33N90JCCU3

MOSFET N-CH 900V 33A SOT227

Microsemi Corporation
3,453 -

RFQ

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 33A (Tc) 10V 120mOhm @ 26A, 10V 3.5V @ 3mA 270 nC @ 10 V ±20V 6800 pF @ 100 V Super Junction 290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT58M50JCU3

APT58M50JCU3

MOSFET N-CH 500V 58A SOT227

Microsemi Corporation
2,820 -

RFQ

Bulk POWER MOS 8™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 10800 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTC60DAM24CT1G

APTC60DAM24CT1G

MOSFET N-CH 600V 95A SP4

Microsemi Corporation
3,740 -

RFQ

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 95A (Tc) 10V 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300 nC @ 10 V ±20V 14400 pF @ 25 V - 462W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
PMZB370UNE,315

PMZB370UNE,315

EFFECT TRANSISTOR, 0.9A I(D), 30

NXP USA Inc.
3,171 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 900mA (Ta) 1.8V, 4.5V 490mOhm @ 500mA, 4.5V 1.05V @ 250µA 1.16 nC @ 15 V ±8V 78 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7495PBF

IRF7495PBF

HEXFET POWER MOSFET

International Rectifier
2,243 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 7.3A (Ta) 10V 22mOhm @ 4.4A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1530 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR3710ZTRL

AUIRFR3710ZTRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,704 -

RFQ

AUIRFR3710ZTRL

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V - 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN4R3-100ES,127

PSMN4R3-100ES,127

TRANSISTOR >30MHZ

NXP USA Inc.
3,790 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSZ042N04NSG

BSZ042N04NSG

MOSFET N-CH 40V 40A TO220AB

Infineon Technologies
3,838 -

RFQ

BSZ042N04NSG

Технические

Bulk OptiMOS™ 3 Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) - 4.2mOhm @ 20A, 10V 4V @ 36µA 46 nC @ 10 V ±20V 3700 pF @ 20 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL4310ZPBF

IRFSL4310ZPBF

IRFSL4310 - HEXFET POWER MOSFET

International Rectifier
3,822 -

RFQ

IRFSL4310ZPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7834TRPBF

IRF7834TRPBF

HEXFET POWER MOSFET

International Rectifier
3,595 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMPB20XNEA,115

PMPB20XNEA,115

7.5A, 20V, N CHANNEL, SILICON, M

Nexperia USA Inc.
2,509 -

RFQ

PMPB20XNEA,115

Технические

Bulk * Active - - - - - - - - - - - - - -
PMN80XP,115

PMN80XP,115

MOSFET P-CH 20V 2.5A 6TSOP

NXP USA Inc.
3,758 -

RFQ

PMN80XP,115

Технические

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) - 102mOhm @ 2.5A, 4.5V 1V @ 250µA 7.5 nC @ 4.5 V ±12V 550 pF @ 10 V - 385mW (Ta), 4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
P2N2369ZL1G

P2N2369ZL1G

SS T092 GP XSTR NPN SPCL

onsemi
3,265 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRF6898MTRPBF

IRF6898MTRPBF

MOSFET N-CH 25V 40A/214A DIRECT

International Rectifier
3,053 -

RFQ

IRF6898MTRPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 214A (Tc) - 1.1mOhm @ 40A, 10V 2.1V @ 100µA 68 nC @ 4.5 V ±16V 5630 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NP89N055PUK-E1-AY

NP89N055PUK-E1-AY

MOSFET N-CH 55V 90A TO263-3

Renesas Electronics America Inc
3,466 -

RFQ

NP89N055PUK-E1-AY

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 4mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) Surface Mount
IRFS3006-7PPBF

IRFS3006-7PPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
2,175 -

RFQ

IRFS3006-7PPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD95P3LLH6AG

STD95P3LLH6AG

MOSFET N-CH 30V 80A DPAK

STMicroelectronics
2,474 -

RFQ

Tape & Reel (TR),Cut Tape (CT) STripFET™ H6 Active - - - 80A (Tj) - - - - - - - - - -
IRFS4310TRRPBF

IRFS4310TRRPBF

MOSFET N-CH 100V 130A TO263-3-2

International Rectifier
3,845 -

RFQ

IRFS4310TRRPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) - 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4010-7TRL

AUIRFS4010-7TRL

MOSFET N-CH 100V 180A TO263

International Rectifier
3,805 -

RFQ

AUIRFS4010-7TRL

Технические

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8743PBF

IRLR8743PBF

IRLR8743 - HEXFET POWER MOSFET

International Rectifier
3,487 -

RFQ

IRLR8743PBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 25A, 10V 2.35V @ 100µA 59 nC @ 4.5 V ±20V 4880 pF @ 15 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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