Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIDR402EP-T1-RE3

SIDR402EP-T1-RE3

N-CHANNEL 40 V (D-S) 175C MOSFET

Vishay Siliconix
2,417 -

RFQ

SIDR402EP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 65.2A (Ta), 291A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 165 nC @ 10 V +20V, -16V 9100 pF @ 20 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR610DP-T1-RE3

SIDR610DP-T1-RE3

N-CHANNEL 200-V (D-S) MOSFET

Vishay Siliconix
2,810 -

RFQ

SIDR610DP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 8.9A (Ta), 39.6A (Tc) 7.5V, 10V 31.9mOhm @ 10A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 1380 pF @ 100 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6725MTRPBF

IRF6725MTRPBF

DIRECTFET POWER MOSFET

International Rectifier
2,799 -

RFQ

IRF6725MTRPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 28A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 4700 pF @ 15 V - 2.8W (Ta), 100W (Tc) -40°C ~ 150°C (TJ) Surface Mount
TP2520N8-G

TP2520N8-G

MOSFET P-CH 200V 260MA TO243AA

Microchip Technology
3,564 -

RFQ

TP2520N8-G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 200 V 260mA (Tj) 4.5V, 10V 12Ohm @ 200mA, 10V 2.4V @ 1mA - ±20V 125 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU9343PBF

IRLU9343PBF

MOSFET P-CH 55V 20A IPAK

International Rectifier
3,422 -

RFQ

IRLU9343PBF

Технические

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) - 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Through Hole
RS1E350BNTB1

RS1E350BNTB1

NCH 30V 80A POWER MOSFET: RS1E35

Rohm Semiconductor
2,419 -

RFQ

RS1E350BNTB1

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 80A (Tc) 4.5V, 10V 1.7mOhm @ 35A, 10V 2.5V @ 1mA 185 nC @ 10 V ±20V 7900 pF @ 15 V - 3W (Ta), 35W (Tc) 150°C (TJ) Surface Mount
IRLS4030-7PPBF

IRLS4030-7PPBF

IRLS4030 - HEXFET POWER MOSFET

International Rectifier
3,830 -

RFQ

IRLS4030-7PPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44NSPBF

IRFZ44NSPBF

HEXFET POWER MOSFET

International Rectifier
3,891 -

RFQ

IRFZ44NSPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA12N60E-GE3

SIHA12N60E-GE3

N-CHANNEL 600V

Vishay Siliconix
3,965 -

RFQ

SIHA12N60E-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD1065T4

STD1065T4

NFET DPAK SPECIAL

Motorola
2,152 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NTA4015NT1G

NTA4015NT1G

MOSFET N-CH 20V 238MA SC75

onsemi
2,865 -

RFQ

NTA4015NT1G

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 238mA (Tj) - 3Ohm @ 10mA, 4.5V 1.5V @ 100µA - ±10V 20 pF @ 5 V - 300mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
IRFL024NPBF

IRFL024NPBF

HEXFET POWER MOSFET

International Rectifier
3,870 -

RFQ

IRFL024NPBF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJF60R980E_T0_00001

PJF60R980E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.
2,754 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 4V @ 250µA 14.4 nC @ 10 V ±20V 300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7832PBF

IRF7832PBF

HEXFET POWER MOSFET

International Rectifier
2,162 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 2.32V @ 250µA 51 nC @ 4.5 V ±20V 4310 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
AUIRF2907ZS7PTL

AUIRF2907ZS7PTL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
2,549 -

RFQ

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 180A (Tc) 10V 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7580 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C645NLT1G

NTMFS5C645NLT1G

MOSFET N-CH 60V 22A/100A 5DFN

onsemi
2,256 -

RFQ

NTMFS5C645NLT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 100A (Tc) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2200 pF @ 50 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4620PBF

IRFR4620PBF

PFET, 24A I(D), 200V, 0.078OHM

International Rectifier
3,634 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ)
AUIRFR3607TRL

AUIRFR3607TRL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
3,402 -

RFQ

AUIRFR3607TRL

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) - 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V - 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6511END3TL1

R6511END3TL1

650V 11A TO-252, LOW-NOISE POWER

Rohm Semiconductor
2,106 -

RFQ

R6511END3TL1

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 124W (Tc) 150°C (TJ) Surface Mount
AUIRF6218STRL

AUIRF6218STRL

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier
2,325 -

RFQ

AUIRF6218STRL

Технические

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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