Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SKI03087

SKI03087

MOSFET N-CH 30V 40A TO263

Sanken
3,525 -

RFQ

SKI03087

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 31.5A, 10V 2.5V @ 250µA 16.3 nC @ 10 V ±20V 1030 pF @ 15 V - 52W (Tc) 150°C (TJ) Surface Mount
SKI04024

SKI04024

MOSFET N-CH 40V 85A TO263

Sanken
2,749 -

RFQ

SKI04024

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 4.5V, 10V 3mOhm @ 82.5A, 10V 2.5V @ 1.5mA 97.6 nC @ 10 V ±20V 6200 pF @ 25 V - 135W (Tc) 150°C (TJ) Surface Mount
SKI06048

SKI06048

MOSFET N-CH 60V 85A TO263

Sanken
3,168 -

RFQ

SKI06048

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 4.5V, 10V 4.7mOhm @ 55A, 10V 2.5V @ 1.5mA 90.6 nC @ 10 V ±20V 6210 pF @ 25 V - 135W (Tc) 150°C (TJ) Surface Mount
SKI06073

SKI06073

MOSFET N-CH 60V 78A TO263

Sanken
3,596 -

RFQ

SKI06073

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 78A (Tc) 4.5V, 10V 6.3mOhm @ 39A, 10V 2.5V @ 1mA 53.6 nC @ 10 V ±20V 3810 pF @ 25 V - 116W (Tc) 150°C (TJ) Surface Mount
SKI07074

SKI07074

MOSFET N-CH 75V 85A TO263

Sanken
2,475 -

RFQ

SKI07074

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 85A (Tc) 4.5V, 10V 6.6mOhm @ 44A, 10V 2.5V @ 1.5mA 91 nC @ 10 V ±20V 6340 pF @ 25 V - 135W (Tc) 150°C (TJ) Surface Mount
SKI07171

SKI07171

MOSFET N-CH 75V 46A TO263

Sanken
3,586 -

RFQ

SKI07171

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 46A (Tc) 4.5V, 10V 13.6mOhm @ 22.8A, 10V 2.5V @ 650µA 36.2 nC @ 10 V ±20V 2520 pF @ 25 V - 90W (Tc) 150°C (TJ) Surface Mount
HUFA75321D3ST

HUFA75321D3ST

MOSFET N-CH 55V 20A TO252AA

onsemi
2,505 -

RFQ

HUFA75321D3ST

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA75639S3ST

HUFA75639S3ST

MOSFET N-CH 100V 56A D2PAK

onsemi
3,768 -

RFQ

HUFA75639S3ST

Технические

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3457DV

SI3457DV

MOSFET P-CH 30V 4A SUPERSOT6

onsemi
3,324 -

RFQ

SI3457DV

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 50mOhm @ 4A, 10V 3V @ 250µA 8.1 nC @ 5 V ±25V 470 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SUD42N03-3M9P-GE3

SUD42N03-3M9P-GE3

MOSFET N-CH 30V 42A TO252

Vishay Siliconix
3,317 -

RFQ

SUD42N03-3M9P-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 3.9mOhm @ 22A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 3535 pF @ 15 V - 2.5W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB120N10F4

STB120N10F4

MOSFET N-CH 100V D2PAK

STMicroelectronics
2,612 -

RFQ

STB120N10F4

Технические

Tape & Reel (TR) - Obsolete - - - 120A (Tc) 10V - - - ±20V - - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AON6760

AON6760

MOSFET N-CH 30V 28A/36A 8DFN

Alpha & Omega Semiconductor Inc.
3,109 -

RFQ

AON6760

Технические

Tape & Reel (TR),Cut Tape (CT) AlphaMOS Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 36A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V 2V @ 250µA 70 nC @ 10 V ±12V 3440 pF @ 15 V - 5W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NP100P06PLG-E1-AY

NP100P06PLG-E1-AY

MOSFET P-CH 60V 100A TO263

Renesas Electronics America Inc
3,948 -

RFQ

NP100P06PLG-E1-AY

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 2.5V @ 1mA 300 nC @ 10 V ±20V 15000 pF @ 10 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) Surface Mount
IXTP1R6N100D2

IXTP1R6N100D2

MOSFET N-CH 1000V 1.6A TO220AB

IXYS
2,087 -

RFQ

IXTP1R6N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tc) 10V 10Ohm @ 800mA, 0V - 27 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISC009N06LM5ATMA1

ISC009N06LM5ATMA1

MOSFET N-CH 60V 41A/348A TSON-8

Infineon Technologies
2,590 -

RFQ

ISC009N06LM5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 60 V 41A (Ta), 348A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2.3V @ 147µA 209 nC @ 10 V ±20V 13000 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBF30PBF-BE3

IRFBF30PBF-BE3

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix
2,688 -

RFQ

IRFBF30PBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) - 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
AON6774

AON6774

MOSFET N-CH 30V 44A/85A 8DFN

Alpha & Omega Semiconductor Inc.
3,711 -

RFQ

AON6774

Технические

Tape & Reel (TR),Cut Tape (CT) AlphaMOS Active N-Channel MOSFET (Metal Oxide) 30 V 44A (Ta), 85A (Tc) 4.5V, 10V 2.05mOhm @ 20A, 10V 2.2V @ 250µA 60 nC @ 10 V ±20V 3000 pF @ 15 V - 6.2W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF7N90K5

STF7N90K5

MOSFET N-CH 900V 7A TO220FP

STMicroelectronics
3,673 -

RFQ

STF7N90K5

Технические

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V - 5V @ 100µA - ±30V - - 25W -55°C ~ 150°C (TJ) Through Hole
AON7532E

AON7532E

MOSFET N-CH 30V 30.5A/28A 8DFN

Alpha & Omega Semiconductor Inc.
3,226 -

RFQ

AON7532E

Технические

Tape & Reel (TR),Cut Tape (CT) AlphaMOS Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30.5A (Ta), 28A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1950 pF @ 15 V - 5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK2R4E08QM,S1X

TK2R4E08QM,S1X

UMOS10 TO-220AB 80V 2.4MOHM

Toshiba Semiconductor and Storage
2,208 -

RFQ

TK2R4E08QM,S1X

Технические

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.44mOhm @ 50A, 10V 3.5V @ 2.2mA 178 nC @ 10 V ±20V 13000 pF @ 40 V - 300W (Tc) 175°C Through Hole
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