| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM210N02CX RFGMOSFET N-CHANNEL 20V 6.7A SOT23 Taiwan Semiconductor Corporation |
419 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.7A (Tc) | 1.8V, 4.5V | 25mOhm @ 4A, 4.5V | 800mV @ 250µA | 4 nC @ 4.5 V | ±10V | 600 pF @ 10 V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount |
|
BSC120N03LSGATMA1MOSFET N-CH 30V 12A/39A TDSON Infineon Technologies |
9,075 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 12mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1200 pF @ 15 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ZXMP3A17E6TAMOSFET P-CH 30V 3.2A SOT-23-6 Diodes Incorporated |
56,045 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.2A (Ta) | 4.5V, 10V | 70mOhm @ 3.2A, 10V | 1V @ 250µA | 15.8 nC @ 10 V | ±20V | 630 pF @ 15 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLMS2002TRPBFMOSFET N-CH 20V 6.5A MICRO6 Infineon Technologies |
87,005 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF8714TRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
2,760 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1020 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
TSM250N02CX RFGMOSFET N-CHANNEL 20V 5.8A SOT23 Taiwan Semiconductor Corporation |
374,755 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.8A (Tc) | 1.8V, 4.5V | 25mOhm @ 4A, 4.5V | 800mV @ 250µA | 7.7 nC @ 4.5 V | ±10V | 535 pF @ 10 V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount |
|
TSM2309CX RFGMOSFET P-CHANNEL 60V 3.1A SOT23 Taiwan Semiconductor Corporation |
151,792 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.1A (Tc) | 4.5V, 10V | 190mOhm @ 3A, 10V | 2.5V @ 250µA | 8.2 nC @ 10 V | ±20V | 425 pF @ 30 V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount |
|
IRF8736TRPBFMOSFET N-CH 30V 18A 8SO Infineon Technologies |
50,921 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.35V @ 50µA | 26 nC @ 4.5 V | ±20V | 2315 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFM120ATFMOSFET N-CH 100V 2.3A SOT223-4 onsemi |
30,098 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.3A (Ta) | 10V | 200mOhm @ 1.15A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 480 pF @ 25 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLL014NTRPBFMOSFET N-CH 55V 2A SOT223 Infineon Technologies |
92,701 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14 nC @ 10 V | ±16V | 230 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF8721TRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
2,207 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1040 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AOD4185MOSFET P-CH 40V 40A TO252 Alpha & Omega Semiconductor Inc. |
21,982 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 15mOhm @ 20A, 10V | 3V @ 250µA | 55 nC @ 10 V | ±20V | 2550 pF @ 20 V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
AO4421MOSFET P-CH 60V 6.2A 8SOIC Alpha & Omega Semiconductor Inc. |
54,041 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.2A (Ta) | 4.5V, 10V | 40mOhm @ 6.2A, 10V | 3V @ 250µA | 55 nC @ 10 V | ±20V | 2900 pF @ 30 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFHS9301TRPBFMOSFET P-CH 30V 6A/13A 6PQFN Infineon Technologies |
11,980 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta), 13A (Tc) | 4.5V, 10V | 37mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13 nC @ 10 V | ±20V | 580 pF @ 25 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
CMUDM7005 TR PBFREEMOSFET N-CH 20V 650MA SOT523 Central Semiconductor Corp |
205,441 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 650mA (Ta) | 1.5V, 4.5V | 230mOhm @ 600mA, 4.5V | 1.1V @ 250µA | 1.58 nC @ 4.5 V | 8V | 100 pF @ 16 V | - | 300mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
FQT3P20TFMOSFET P-CH 200V 670MA SOT223-4 onsemi |
17,225 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 670mA (Tc) | 10V | 2.7Ohm @ 335mA, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFL024ZTRPBFMOSFET N-CH 55V 5.1A SOT223 Infineon Technologies |
42,585 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 5.1A (Ta) | 10V | 57.5mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 340 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFL4310TRPBFMOSFET N-CH 100V 1.6A SOT223 Infineon Technologies |
89,506 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.6A (Ta) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7205TRPBFMOSFET P-CH 30V 4.6A 8SO Infineon Technologies |
71,961 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Ta) | 4.5V, 10V | 70mOhm @ 4.6A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 870 pF @ 10 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RHP020N06T100MOSFET N-CH 60V 2A MPT3 Rohm Semiconductor |
22,848 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 200mOhm @ 2A, 10V | 2.5V @ 1mA | 14 nC @ 10 V | ±20V | 140 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |