Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL640A

IRL640A

MOSFET N-CH 200V 18A TO220-3

onsemi
2,728 -

RFQ

IRL640A

Технические

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 5V 180mOhm @ 9A, 5V 2V @ 250µA 56 nC @ 5 V ±20V 1705 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD110PBF

IRFD110PBF

MOSFET N-CH 100V 1A 4DIP

Vishay Siliconix
26,466 -

RFQ

IRFD110PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 540mOhm @ 600mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
EPC8009

EPC8009

GANFET N-CH 65V 4A DIE

EPC
14,042 -

RFQ

EPC8009

Технические

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 65 V 4A (Ta) 5V 130mOhm @ 500mA, 5V 2.5V @ 250µA 0.45 nC @ 5 V +6V, -4V 52 pF @ 32.5 V - - -40°C ~ 150°C (TJ) Surface Mount
IRF3205PBF

IRF3205PBF

MOSFET N-CH 55V 110A TO220AB

Infineon Technologies
31,119 -

RFQ

IRF3205PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1407STRLPBF

IRF1407STRLPBF

MOSFET N-CH 75V 100A D2PAK

Infineon Technologies
3,805 -

RFQ

IRF1407STRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN057-200B,118

PSMN057-200B,118

MOSFET N-CH 200V 39A D2PAK

Nexperia USA Inc.
961 -

RFQ

PSMN057-200B,118

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 39A (Tc) 10V 57mOhm @ 17A, 10V 4V @ 1mA 96 nC @ 10 V ±20V 3750 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR5410TRL

AUIRFR5410TRL

MOSFET P-CH 100V 13A DPAK

Infineon Technologies
20,103 -

RFQ

AUIRFR5410TRL

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF2805STRLPBF

IRF2805STRLPBF

MOSFET N-CH 55V 135A D2PAK

Infineon Technologies
4,501 -

RFQ

IRF2805STRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) 10V 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCMT199N60

FCMT199N60

MOSFET N-CH 600V 20.2A POWER88

onsemi
14,000 -

RFQ

FCMT199N60

Технические

Tape & Reel (TR),Cut Tape (CT) SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 199mOhm @ 10A, 10V 3.5V @ 250µA 74 nC @ 10 V ±20V 2950 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB34P10TM

FQB34P10TM

MOSFET P-CH 100V 33.5A D2PAK

onsemi
20,820 -

RFQ

FQB34P10TM

Технические

Tape & Reel (TR),Cut Tape (CT) QFET® Active P-Channel MOSFET (Metal Oxide) 100 V 33.5A (Tc) 10V 60mOhm @ 16.75A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 2910 pF @ 25 V - 3.75W (Ta), 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI540NPBF

IRFI540NPBF

MOSFET N-CH 100V 20A TO220AB FP

Infineon Technologies
1,795 -

RFQ

IRFI540NPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 52mOhm @ 11A, 10V 4V @ 250µA 94 nC @ 10 V ±20V 1400 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410ZPBF

IRFB4410ZPBF

MOSFET N-CH 100V 97A TO220AB

Infineon Technologies
3,841 -

RFQ

IRFB4410ZPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB039N10N3GATMA1

IPB039N10N3GATMA1

MOSFET N-CH 100V 160A TO263-7

Infineon Technologies
11,276 -

RFQ

IPB039N10N3GATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 6V, 10V 3.9mOhm @ 100A, 10V 3.5V @ 160µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP30N06L

FQP30N06L

MOSFET N-CH 60V 32A TO220-3

onsemi
3,283 -

RFQ

FQP30N06L

Технические

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 5V, 10V 35mOhm @ 16A, 10V 2.5V @ 250µA 20 nC @ 5 V ±20V 1040 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUD50N06-09L-E3

SUD50N06-09L-E3

MOSFET N-CH 60V 50A TO252

Vishay Siliconix
1,633 -

RFQ

SUD50N06-09L-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 9.3mOhm @ 20A, 10V 3V @ 250µA 70 nC @ 10 V ±20V 2650 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS86350

FDMS86350

MOSFET N-CH 80V 25A/130A POWER56

onsemi
10,775 -

RFQ

FDMS86350

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 25A (Ta), 130A (Tc) 8V, 10V 2.4mOhm @ 25A, 10V 4.5V @ 250µA 155 nC @ 10 V ±20V 10680 pF @ 40 V - 2.7W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC016N06NSTATMA1

BSC016N06NSTATMA1

MOSFET N-CH 60V 31A/100A TDSON

Infineon Technologies
2,230 -

RFQ

BSC016N06NSTATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 100A (Tc) 6V, 10V 1.6mOhm @ 50A, 10V 3.3V @ 95µA 95 nC @ 10 V ±20V 6500 pF @ 30 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS86150

FDMS86150

MOSFET N CH 100V 16A POWER56

onsemi
4,144 -

RFQ

FDMS86150

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 60A (Tc) 6V, 10V 4.85mOhm @ 16A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 4065 pF @ 50 V - 2.7W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM160N10LCR RLG

TSM160N10LCR RLG

MOSFET N-CH 100V 46A 8PDFN

Taiwan Semiconductor Corporation
19,877 -

RFQ

TSM160N10LCR RLG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 46A (Tc) 4.5V, 10V 16mOhm @ 8A, 10V 2.5V @ 250µA 73 nC @ 10 V ±20V 4431 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS7434TRLPBF

IRFS7434TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
1,589 -

RFQ

IRFS7434TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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