Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVTFS5820NLWFTWG

NVTFS5820NLWFTWG

MOSFET N-CH 60V 11A 8WDFN

onsemi
2,769 -

RFQ

NVTFS5820NLWFTWG

Технические

Tape & Reel (TR),Bulk Automotive, AEC-Q101 Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta) 4.5V, 10V 11.5mOhm @ 8.7A, 10V 2.3V @ 250µA 28 nC @ 10 V ±20V 1462 pF @ 25 V - 3.2W (Ta), 21W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC040N10NS5SCATMA1

BSC040N10NS5SCATMA1

MOSFET N-CH 100V 140A WSON-8

Infineon Technologies
10,642 -

RFQ

BSC040N10NS5SCATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 6V, 10V 4mOhm @ 50A, 10V 3.8V @ 95µA 72 nC @ 10 V ±20V 5300 pF @ 50 V - 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVTFS5826NLWFTWG

NVTFS5826NLWFTWG

MOSFET N-CH 60V 7.6A 8WDFN

onsemi
2,467 -

RFQ

NVTFS5826NLWFTWG

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 7.6A (Ta) 4.5V, 10V 24mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta), 22W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSB056N10NN3GXUMA1

BSB056N10NN3GXUMA1

MOSFET N-CH 100V 9A/83A 2WDSON

Infineon Technologies
27,102 -

RFQ

BSB056N10NN3GXUMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 83A (Tc) 6V, 10V 5.6mOhm @ 30A, 10V 3.5V @ 100µA 74 nC @ 10 V ±20V 5500 pF @ 50 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRF8736M2TR

AUIRF8736M2TR

MOSFET N-CH 40V 27A DIRECTFET

Infineon Technologies
13,601 -

RFQ

AUIRF8736M2TR

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 137A (Tc) 10V 1.9mOhm @ 85A, 10V 3.9V @ 150µA 204 nC @ 10 V ±20V 6867 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SCH1331-P-TL-H

SCH1331-P-TL-H

MOSFET P-CH 12V 3A SCH6

onsemi
2,030 -

RFQ

Tape & Reel (TR) - Obsolete - - - 3A (Tj) - - - - - - - - - Surface Mount
IRFB3206PBF

IRFB3206PBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
8,820 -

RFQ

IRFB3206PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6540 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SCH1331-S-TL-H

SCH1331-S-TL-H

MOSFET P-CH 12V 3A SCH6

onsemi
4,500,000 -

RFQ

Tape & Reel (TR),Bulk - Obsolete - - - 3A (Tj) - - - - - - - - - Surface Mount
IRF4905PBF

IRF4905PBF

MOSFET P-CH 55V 74A TO220AB

Infineon Technologies
91,681 -

RFQ

IRF4905PBF

Технические

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
EPC2067

EPC2067

TRANS GAN .0015OHM 40V 14LGA

EPC
6,738 -

RFQ

EPC2067

Технические

Tape & Reel (TR),Cut Tape (CT) * Active N-Channel GaNFET (Gallium Nitride) 40 V 69A (Ta) 5V 1.55mOhm @ 37A, 5V 2.5V @ 18mA 22.3 nC @ 5 V +6V, -4V 3267 pF @ 20 V - - -40°C ~ 150°C (TJ) Surface Mount
IXTA08N100D2

IXTA08N100D2

MOSFET N-CH 1000V 800MA TO263

IXYS
5,035 -

RFQ

IXTA08N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) - 21Ohm @ 400mA, 0V - 14.6 nC @ 5 V ±20V 325 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740ASPBF

IRF740ASPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
779 -

RFQ

IRF740ASPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMT80080DC

FDMT80080DC

MOSFET N-CH 80V 36A/254A 8DUAL

onsemi
9,370 -

RFQ

FDMT80080DC

Технические

Tape & Reel (TR),Cut Tape (CT) Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 36A (Ta), 254A (Tc) 8V, 10V 1.35mOhm @ 36A, 10V 4V @ 250µA 273 nC @ 10 V ±20V 20720 pF @ 40 V - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4321TRLPBF

IRFS4321TRLPBF

MOSFET N-CH 150V 85A D2PAK

Infineon Technologies
9,249 -

RFQ

IRFS4321TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3207TRLPBF

IRFS3207TRLPBF

MOSFET N-CH 75V 170A D2PAK

Infineon Technologies
1,480 -

RFQ

IRFS3207TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTY01N100

IXTY01N100

MOSFET N-CH 1000V 100MA TO252AA

IXYS
7,059 -

RFQ

IXTY01N100

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 100mA (Tc) 10V 80Ohm @ 100mA, 10V 4.5V @ 25µA 6.9 nC @ 10 V ±20V 54 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL2505PBF

IRL2505PBF

MOSFET N-CH 55V 104A TO220AB

Infineon Technologies
11,333 -

RFQ

IRL2505PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDBL86210-F085

FDBL86210-F085

MOSFET N-CH 150V 169A 8HPSOF

onsemi
466 -

RFQ

FDBL86210-F085

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 169A (Tc) 10V 6.3mOhm @ 80A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 5805 pF @ 75 V - 500W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IRF5210PBF

IRF5210PBF

MOSFET P-CH 100V 40A TO220AB

Infineon Technologies
27,227 -

RFQ

IRF5210PBF

Технические

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLS3036TRL7PP

IRLS3036TRL7PP

MOSFET N-CH 60V 240A D2PAK

Infineon Technologies
4,218 -

RFQ

IRLS3036TRL7PP

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 4.5V, 10V 1.9mOhm @ 180A, 10V 2.5V @ 250µA 160 nC @ 4.5 V ±16V 11270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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