Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMPH6250S-13

DMPH6250S-13

MOSFET P-CH 60V 2.4A SOT23

Diodes Incorporated
3,882 -

RFQ

DMPH6250S-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 2.4A (Ta) 4.5V, 10V 155mOhm @ 2A, 10V 3V @ 250µA 8.3 nC @ 10 V ±20V 512 pF @ 30 V - 920mW -55°C ~ 175°C (TJ) Surface Mount
DMN6075SQ-13

DMN6075SQ-13

MOSFET BVDSS: 41V~60V SOT23 T&R

Diodes Incorporated
3,438 -

RFQ

DMN6075SQ-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4.5V, 10V 85mOhm @ 3.2A, 10V 3V @ 250µA 12.3 nC @ 10 V ±20V 606 pF @ 20 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMG3407SSN-7

DMG3407SSN-7

MOSFET P-CH 30V 4A SC59

Diodes Incorporated
3,545 -

RFQ

DMG3407SSN-7

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 50mOhm @ 4.1A, 10V 2.1V @ 250µA 16 nC @ 10 V ±20V 700 pF @ 15 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUZ31H3046XKSA1

BUZ31H3046XKSA1

MOSFET N-CH 200V 14.5A TO262-3

Infineon Technologies
6,994 -

RFQ

BUZ31H3046XKSA1

Технические

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 5V 200mOhm @ 9A, 5V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB160N08S403ATMA1

IPB160N08S403ATMA1

MOSFET N-CH 80V 160A TO263-7

Infineon Technologies
2,373 -

RFQ

IPB160N08S403ATMA1

Технические

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 150µA 112 nC @ 10 V ±20V 7750 pF @ 25 V - 208W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R330P6ATMA1

IPB60R330P6ATMA1

MOSFET N-CH 600V 12A D2PAK

Infineon Technologies
3,521 -

RFQ

IPB60R330P6ATMA1

Технические

Tape & Reel (TR) CoolMOS™ P6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 330mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 93W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB60R600P6ATMA1

IPB60R600P6ATMA1

MOSFET N-CH 600V 7.3A D2PAK

Infineon Technologies
2,488 -

RFQ

IPB60R600P6ATMA1

Технические

Tape & Reel (TR) CoolMOS™ P6 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R065C7ATMA1

IPB65R065C7ATMA1

MOSFET N-CH 600V 7.3A D2PAK

Infineon Technologies
3,875 -

RFQ

IPB65R065C7ATMA1

Технические

Tape & Reel (TR) CoolMOS™ P6 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 171W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R095C7ATMA1

IPB65R095C7ATMA1

MOSFET N-CH 650V 24A D2PAK

Infineon Technologies
3,913 -

RFQ

IPB65R095C7ATMA1

Технические

Tape & Reel (TR) CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R125C7ATMA1

IPB65R125C7ATMA1

MOSFET N-CH 650V 18A D2PAK

Infineon Technologies
3,940 -

RFQ

IPB65R125C7ATMA1

Технические

Tape & Reel (TR),Bulk CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 101W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R280E6ATMA1

IPB65R280E6ATMA1

MOSFET N-CH 650V 13.8A D2PAK

Infineon Technologies
3,961 -

RFQ

IPB65R280E6ATMA1

Технические

Tape & Reel (TR) CoolMOS™ E6 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB80N08S406ATMA1

IPB80N08S406ATMA1

MOSFET N-CH 80V 80A TO263-3

Infineon Technologies
3,986 -

RFQ

IPB80N08S406ATMA1

Технические

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 10V 5.5mOhm @ 80A, 10V 4V @ 90µA 70 nC @ 10 V ±20V 4800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80R290C3AATMA1

IPB80R290C3AATMA1

MOSFET P-CH TO263-3

Infineon Technologies
2,047 -

RFQ

IPB80R290C3AATMA1

Технические

Tape & Reel (TR),Bulk * Obsolete - - - - - - - - - - - - - -
IPC100N04S402ATMA1

IPC100N04S402ATMA1

MOSFET N-CH 40V 100A 8TDSON

Infineon Technologies
2,275 -

RFQ

IPC100N04S402ATMA1

Технические

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 50A, 10V 4V @ 80µA 105 nC @ 10 V ±20V 8100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UF3C065030K4S

UF3C065030K4S

MOSFET N-CH 650V 85A TO247-4

UnitedSiC
1,988 -

RFQ

UF3C065030K4S

Технические

Tube - Active N-Channel - 650 V 85A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPC60N04S406ATMA1

IPC60N04S406ATMA1

MOSFET N-CH 40V 60A TDSON-8-23

Infineon Technologies
3,234 -

RFQ

IPC60N04S406ATMA1

Технические

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 10V 6mOhm @ 30A, 10V 4V @ 30µA 33 nC @ 10 V ±20V 2650 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH16N120P

IXFH16N120P

MOSFET N-CH 1200V 16A TO247AD

IXYS
680 -

RFQ

IXFH16N120P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC60N04S4L06ATMA1

IPC60N04S4L06ATMA1

MOSFET N-CH 40V 60A TDSON-8-23

Infineon Technologies
3,347 -

RFQ

IPC60N04S4L06ATMA1

Технические

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 5.6mOhm @ 30A, 10V 2.2V @ 30µA 43 nC @ 10 V ±16V 3600 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
LSIC1MO120E0080

LSIC1MO120E0080

SICFET N-CH 1200V 39A TO247-3

Littelfuse Inc.
791 -

RFQ

LSIC1MO120E0080

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 95 nC @ 20 V +22V, -6V 1825 pF @ 800 V - 179W (Tc) -55°C ~ 150°C Through Hole
IXTT80N20L

IXTT80N20L

MOSFET N-CH 200V 80A TO268

IXYS
580 -

RFQ

IXTT80N20L

Технические

Tube Linear Active N-Channel MOSFET (Metal Oxide) 200 V 80A (Tc) 10V 32mOhm @ 40A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 6160 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь