Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK44N80P

IXFK44N80P

MOSFET N-CH 800V 44A TO264AA

IXYS
600 -

RFQ

IXFK44N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX32P60P

IXTX32P60P

MOSFET P-CH 600V 32A PLUS247-3

IXYS
298 -

RFQ

IXTX32P60P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 350mOhm @ 16A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT220N20X3HV

IXFT220N20X3HV

MOSFET N-CH 200V 220A TO268HV

IXYS
1,696 -

RFQ

IXFT220N20X3HV

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK90P20P

IXTK90P20P

MOSFET P-CH 200V 90A TO264

IXYS
3,555 -

RFQ

IXTK90P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 44mOhm @ 500mA, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC80N04S403ATMA1

IPC80N04S403ATMA1

MOSFET N-CH 40V 80A TDSON-8-23

Infineon Technologies
3,034 -

RFQ

IPC80N04S403ATMA1

Технические

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.3mOhm @ 40A, 10V 4V @ 60µA 71 nC @ 10 V ±20V 5720 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTR170P10P

IXTR170P10P

MOSFET P-CH 100V 108A ISOPLUS247

IXYS
1,119 -

RFQ

IXTR170P10P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 108A (Tc) 10V 13mOhm @ 85A, 10V 4V @ 1mA 240 nC @ 10 V ±20V 12600 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD65R650CEATMA1

IPD65R650CEATMA1

MOSFET N-CH 650V 10.1A TO252-3

Infineon Technologies
3,128 -

RFQ

IPD65R650CEATMA1

Технические

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 10.1A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 0.21mA 23 nC @ 10 V ±20V 440 pF @ 100 V Super Junction 86W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IXFK240N15T2

IXFK240N15T2

MOSFET N-CH 150V 240A TO264AA

IXYS
126 -

RFQ

IXFK240N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 460 nC @ 10 V ±20V 32000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI084N06L3GXKSA1

IPI084N06L3GXKSA1

MOSFET N-CH 60V 50A TO262-3

Infineon Technologies
119,500 -

RFQ

IPI084N06L3GXKSA1

Технические

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N08S404AKSA1

IPI120N08S404AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies
2,537 -

RFQ

IPI120N08S404AKSA1

Технические

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.4mOhm @ 100A, 10V 4V @ 120µA 95 nC @ 10 V ±20V 6450 pF @ 25 V - 179W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N10S403AKSA1

IPI120N10S403AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies
3,302 -

RFQ

IPI120N10S403AKSA1

Технические

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120N10S405AKSA1

IPI120N10S405AKSA1

MOSFET N-CH 100V 120A TO262-3

Infineon Technologies
2,898 -

RFQ

IPI120N10S405AKSA1

Технические

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.3mOhm @ 100A, 10V 3.5V @ 120µA 91 nC @ 10 V ±20V 6540 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120P04P404AKSA1

IPI120P04P404AKSA1

MOSFET P-CH 40V 120A TO262-3

Infineon Technologies
2,584 -

RFQ

IPI120P04P404AKSA1

Технические

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.8mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI120P04P4L03AKSA1

IPI120P04P4L03AKSA1

MOSFET P-CH 40V 120A TO262-3

Infineon Technologies
2,227 -

RFQ

IPI120P04P4L03AKSA1

Технические

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R280E6XKSA1

IPI65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

Infineon Technologies
3,382 -

RFQ

IPI65R280E6XKSA1

Технические

Tube CoolMOS™ E6 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI70P04P409AKSA1

IPI70P04P409AKSA1

MOSFET N-CH 40V 72A TO262-3

Infineon Technologies
2,229 -

RFQ

IPI70P04P409AKSA1

Технические

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 72A (Tc) 10V 9.4mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P03P405AKSA1

IPI80P03P405AKSA1

MOSFET P-CH 30V 80A TO262-3

Infineon Technologies
2,998 -

RFQ

IPI80P03P405AKSA1

Технические

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P04P405AKSA1

IPI80P04P405AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies
2,305 -

RFQ

IPI80P04P405AKSA1

Технические

Tube,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P04P407AKSA1

IPI80P04P407AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies
2,532 -

RFQ

IPI80P04P407AKSA1

Технические

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
DMN6069SE-13

DMN6069SE-13

MOSFET N-CH 60V 4.3A/10A SOT223

Diodes Incorporated
5,000 -

RFQ

DMN6069SE-13

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 4.3A (Ta), 10A (Tc) 4.5V, 10V 69mOhm @ 3A, 10V 3V @ 250µA 16 nC @ 10 V ±20V 825 pF @ 30 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь