Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLIZ24GPBF

IRLIZ24GPBF

MOSFET N-CHANNEL 60V 14A TO220

Vishay Siliconix
2,576 -

RFQ

IRLIZ24GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIA430DJ-T4-GE3

SIA430DJ-T4-GE3

MOSFET N-CH 20V 12A/12A PPAK

Vishay Siliconix
2,879 -

RFQ

SIA430DJ-T4-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Ta), 12A (Tc) 4.5V, 10V 13.5mOhm @ 7A, 10V 3V @ 250µA 18 nC @ 10 V ±20V 800 pF @ 10 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA444DJT-T4-GE3

SIA444DJT-T4-GE3

MOSFET N-CH 30V 11A/12A PPAK

Vishay Siliconix
3,898 -

RFQ

SIA444DJT-T4-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 12A (Tc) 4.5V, 10V 17mOhm @ 7.4A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 560 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA462DJ-T4-GE3

SIA462DJ-T4-GE3

MOSFET N-CH 30V 12A/12A PPAK

Vishay Siliconix
2,856 -

RFQ

SIA462DJ-T4-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 12A (Tc) 4.5V, 10V 18mOhm @ 9A, 10V 2.4V @ 250µA 17 nC @ 10 V ±20V 570 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUC85N15-19DWF

SUC85N15-19DWF

MOSFET N-CH

Vishay Siliconix
2,585 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
SI4103DY-T1-GE3

SI4103DY-T1-GE3

MOSFET P-CH 30V 14A/16A 8SO

Vishay Siliconix
3,481 -

RFQ

SI4103DY-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 16A (Tc) 4.5V, 10V 7.9mOhm @ 10A, 10V 2V @ 250µA 140 nC @ 10 V ±20V 5200 pF @ 15 V - 2.5W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR164ADP-T1-GE3

SIR164ADP-T1-GE3

MOSFET N-CH 30V 35.9A/40A PPAK

Vishay Siliconix
2,857 -

RFQ

SIR164ADP-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 35.9A (Ta), 40A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V 2.2V @ 250µA 77 nC @ 10 V +20V, -16V 3595 pF @ 15 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ418EP-T2_GE3

SQJ418EP-T2_GE3

MOSFET N-CH 100V 48A PPAK SO-8

Vishay Siliconix
2,027 -

RFQ

SQJ418EP-T2_GE3

Технические

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 14mOhm @ 10A, 10V 3.5V @ 250µA 35 nC @ 10 V ±20V 1700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4634DY-T1-E3

SI4634DY-T1-E3

MOSFET N-CH 30V 24.5A 8SO

Vishay Siliconix
5,000 -

RFQ

SI4634DY-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24.5A (Tc) 4.5V, 10V 5.2mOhm @ 15A, 10V 2.6V @ 250µA 68 nC @ 10 V ±20V 3150 pF @ 15 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFC430

IRFC430

MOSFET N-CH 500V TO PKG

Vishay Siliconix
3,036 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
IRFR420PBF

IRFR420PBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
2,996 -

RFQ

IRFR420PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU9010PBF

IRFU9010PBF

MOSFET P-CH 50V 5.3A TO251AA

Vishay Siliconix
2,900 -

RFQ

IRFU9010PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640PBF-BE3

IRF9640PBF-BE3

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix
1,990 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF9520S-GE3

SIHF9520S-GE3

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix
3,534 -

RFQ

SIHF9520S-GE3

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI9520GPBF

IRFI9520GPBF

MOSFET P-CH 100V 5.2A TO220-3

Vishay Siliconix
1,172 -

RFQ

IRFI9520GPBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 5.2A (Tc) 10V 600mOhm @ 3.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI740GLCPBF

IRFI740GLCPBF

MOSFET N-CH 400V 5.7A TO220-3

Vishay Siliconix
1,058 -

RFQ

IRFI740GLCPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.7A (Tc) 10V 550mOhm @ 3.4A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA21N80AE-GE3

SIHA21N80AE-GE3

MOSFET N-CH 800V 7.5A TO220

Vishay Siliconix
1,004 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 7.5A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4431BDY-T1-GE3

SI4431BDY-T1-GE3

MOSFET P-CH 30V 5.7A 8SO

Vishay Siliconix
3,743 -

RFQ

SI4431BDY-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 30mOhm @ 7.5A, 10V 3V @ 250µA 20 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIJA54DP-T1-GE3

SIJA54DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix
3,750 -

RFQ

SIJA54DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.35mOhm @ 15A, 10V 2.4V @ 250µA 104 nC @ 10 V +20V, -16V 5300 pF @ 20 V - 36.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP5N50D-GE3

SIHP5N50D-GE3

MOSFET N-CH 500V 5.3A TO220AB

Vishay Siliconix
2,674 -

RFQ

SIHP5N50D-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 325 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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