Vishay Siliconix SIA430DJ-T4-GE3

Номер детали
SIA430DJ-T4-GE3
Производитель
Vishay Siliconix
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
PowerPAK® SC-70-6
Технические
Нахождение ЧипаSIA430DJ-T4-GE3.pdf
Описание
MOSFET N-CH 20V 12A/12A PPAK
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SIA430DJ-T4-GE3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SIA430DJ-T4-GE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SIA430DJ-T4-GE3. All suppliers must pass our qualification reviews before they can publish their products including SIA430DJ-T4-GE3 on Нахождение Чипа; we pay more attention to the channels and quality of SIA430DJ-T4-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SIA430DJ-T4-GE3 price and inventory displayed accurate?

The price and inventory of SIA430DJ-T4-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SIA430DJ-T4-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SIA430DJ-T4-GE3 we delivered, we will accept the replacement or return of the SIA430DJ-T4-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SIA430DJ-T4-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SIA430DJ-T4-GE3 pin diagram, SIA430DJ-T4-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SI8447DB-T2-E1 SI8465DB-T2-E1 SI8824EDB-T2-E1 SI2303CDS-T1-BE3 SI1032X-T1-GE3
Номер детали SI8447DB-T2-E1 SI8465DB-T2-E1 SI8824EDB-T2-E1 SI2303CDS-T1-BE3 SI1032X-T1-GE3
Производитель Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Series TrenchFET® TrenchFET® TrenchFET® TrenchFET® TrenchFET®
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V 20 V 20 V 20 V 20 V
Current-ContinuousDrain(Id)@25°C 12A (Ta), 12A (Tc) 12A (Ta), 12A (Tc) 12A (Ta), 12A (Tc) 12A (Ta), 12A (Tc) 12A (Ta), 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 13.5mOhm @ 7A, 10V 13.5mOhm @ 7A, 10V 13.5mOhm @ 7A, 10V 13.5mOhm @ 7A, 10V 13.5mOhm @ 7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 18 nC @ 10 V 18 nC @ 10 V 18 nC @ 10 V 18 nC @ 10 V 18 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 800 pF @ 10 V 800 pF @ 10 V 800 pF @ 10 V 800 pF @ 10 V 800 pF @ 10 V
FETFeature - - - - -
PowerDissipation(Max) 3.5W (Ta), 19.2W (Tc) 3.5W (Ta), 19.2W (Tc) 3.5W (Ta), 19.2W (Tc) 3.5W (Ta), 19.2W (Tc) 3.5W (Ta), 19.2W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

SIA430DJ-T4-GE3 Актуальная информация

Включенные следующие детали "SIA430DJ-T4-GE3" ISSI, Интегрированные Силиконовые Решения Инк SIA430DJ-T4-GE3.

  • Номер детали
  • Производитель
  • Упаковка
  • Описание
На складе:2,879

Пожалуйста, отправьте RFQ.

Пожалуйста, отправьте RFQ, мы ответим сразу.

Номер детали
Количество
Цена
Связь
Компания
почта
Содержание
На складе:2,879
Кол-во. Модуль Извлечение
RFQ Добавить в список RFQ
Нахождение Чипа
STF18N65M2

STF18N65M2

STMicroelectronics

TK65A10N1,S4X

TK65A10N1,S4X

Toshiba Semiconductor and Storage

SIHP17N80AE-GE3

SIHP17N80AE-GE3

Vishay Siliconix

FCPF9N60NT

FCPF9N60NT

onsemi

SIHP18N50C-E3

SIHP18N50C-E3

Vishay Siliconix

STP24N60M6

STP24N60M6

STMicroelectronics

1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь