Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHH24N65E-T1-GE3MOSFET N-CH 650V 23A PPAK 8 X 8 Vishay Siliconix |
821 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 23A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 116 nC @ 10 V | ±30V | 2814 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQ7414AEN-T1_BE3MOSFET N-CH 60V 5.6A PPAK 1212-8 Vishay Siliconix |
2,076 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Tc) | 4.5V, 10V | 26mOhm @ 5.7A, 10V | 2.5V @ 250µA | 24 nC @ 10 V | ±20V | 980 pF @ 30 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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SQ7415AEN-T1_BE3MOSFET P-CH 60V 16A 1212-8 Vishay Siliconix |
3,490 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Tc) | 4.5V, 10V | 65mOhm @ 5.7A, 10V | 2.5V @ 250µA | 38 nC @ 10 V | ±20V | 1385 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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SIHH21N65EF-T1-GE3MOSFET N-CH 650V 19.8A PPAK 8X8 Vishay Siliconix |
675 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19.8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 102 nC @ 10 V | ±30V | 2396 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHP38N60EF-GE3MOSFET N-CH 600V 40A TO220AB Vishay Siliconix |
2,111 | - |
RFQ |
![]() Технические |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 4V @ 250µA | 189 nC @ 10 V | ±30V | 3576 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHH24N65EF-T1-GE3MOSFET N-CH 650V 23A PPAK 8 X 8 Vishay Siliconix |
3,038 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 2780 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIRA90ADP-T1-GE3MOSFET N-CH 30V 71A/334A PPAK Vishay Siliconix |
2,769 | - |
RFQ |
![]() Технические |
Cut Tape (CT) | TrenchFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 30 V | 71A (Ta), 334A (Tc) | - | 0.78mOhm @ 20A, 10V | 2.2V @ 250µA | 195 nC @ 10 V | +20V, -16V | 9120 pF @ 15 V | - | 6.3W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI7615BDN-T1-GE3MOSFET P-CH 20V 29A/104A PPAK Vishay Siliconix |
2,307 | - |
RFQ |
Cut Tape (CT) | - | Discontinued at Mosen | P-Channel | MOSFET (Metal Oxide) | 20 V | 29A (Ta), 104A (Tc) | - | 3.8mOhm @ 20A, 10V | 1.5V @ 250µA | 155 nC @ 10 V | ±12V | 4890 pF @ 10 V | - | 5.2W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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SIHFPS43N50K-GE3MOSFET N-CH 500V SUPER-247 Vishay Siliconix |
3,462 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | 10V | 90mOhm @ 28A, 10V | 5V @ 250µA | 350 nC @ 10 V | ±30V | 8310 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHS20N50C-E3MOSFET N-CH 500V 20A SUPER247 Vishay Siliconix |
3,730 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76 nC @ 10 V | ±30V | 2942 pF @ 25 V | - | 250mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG47N65E-GE3MOSFET N-CH 650V 47A TO247AC Vishay Siliconix |
3,877 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273 nC @ 10 V | ±30V | 5682 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHB30N60AEL-GE3MOSFET N-CH 600V 28A TO263 Vishay Siliconix |
3,006 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | EL | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 120mOhm @ 15A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2565 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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SIHP050N60E-GE3MOSFET N-CH 600V 51A TO220AB Vishay Siliconix |
3,460 | - |
RFQ |
![]() Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 50mOhm @ 23A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 3459 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHW47N60EF-GE3MOSFET N-CH 600V 47A TO247AD Vishay Siliconix |
2,214 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 225 nC @ 10 V | ±30V | 4854 pF @ 100 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHW73N60E-GE3MOSFET N-CH 600V 73A TO247AD Vishay Siliconix |
2,143 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±20V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG70N60AEF-GE3MOSFET N-CH 600V 60A TO247AC Vishay Siliconix |
2,923 | - |
RFQ |
![]() Технические |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 41mOhm @ 35A, 10V | 4V @ 250µA | 410 nC @ 10 V | ±20V | 5348 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHW70N60EF-GE3MOSFET N-CH 600V 70A TO247AD Vishay Siliconix |
2,912 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±30V | 7500 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG73N60E-E3MOSFET N-CH 600V 73A TO247AC Vishay Siliconix |
2,708 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±30V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG70N60EF-GE3MOSFET N-CH 600V 70A TO247AC Vishay Siliconix |
2,725 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±30V | 7500 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG64N65E-GE3MOSFET N-CH 650V 64A TO247AC Vishay Siliconix |
3,640 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 32A, 10V | 4V @ 250µA | 369 nC @ 10 V | ±30V | 7497 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |