Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHH24N65E-T1-GE3

SIHH24N65E-T1-GE3

MOSFET N-CH 650V 23A PPAK 8 X 8

Vishay Siliconix
821 -

RFQ

SIHH24N65E-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 23A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 116 nC @ 10 V ±30V 2814 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ7414AEN-T1_BE3

SQ7414AEN-T1_BE3

MOSFET N-CH 60V 5.6A PPAK 1212-8

Vishay Siliconix
2,076 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 4.5V, 10V 26mOhm @ 5.7A, 10V 2.5V @ 250µA 24 nC @ 10 V ±20V 980 pF @ 30 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ7415AEN-T1_BE3

SQ7415AEN-T1_BE3

MOSFET P-CH 60V 16A 1212-8

Vishay Siliconix
3,490 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 4.5V, 10V 65mOhm @ 5.7A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1385 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH21N65EF-T1-GE3

SIHH21N65EF-T1-GE3

MOSFET N-CH 650V 19.8A PPAK 8X8

Vishay Siliconix
675 -

RFQ

SIHH21N65EF-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 19.8A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 102 nC @ 10 V ±30V 2396 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP38N60EF-GE3

SIHP38N60EF-GE3

MOSFET N-CH 600V 40A TO220AB

Vishay Siliconix
2,111 -

RFQ

SIHP38N60EF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 23.5A, 10V 4V @ 250µA 189 nC @ 10 V ±30V 3576 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH24N65EF-T1-GE3

SIHH24N65EF-T1-GE3

MOSFET N-CH 650V 23A PPAK 8 X 8

Vishay Siliconix
3,038 -

RFQ

SIHH24N65EF-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 2780 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA90ADP-T1-GE3

SIRA90ADP-T1-GE3

MOSFET N-CH 30V 71A/334A PPAK

Vishay Siliconix
2,769 -

RFQ

SIRA90ADP-T1-GE3

Технические

Cut Tape (CT) TrenchFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 71A (Ta), 334A (Tc) - 0.78mOhm @ 20A, 10V 2.2V @ 250µA 195 nC @ 10 V +20V, -16V 9120 pF @ 15 V - 6.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7615BDN-T1-GE3

SI7615BDN-T1-GE3

MOSFET P-CH 20V 29A/104A PPAK

Vishay Siliconix
2,307 -

RFQ

Cut Tape (CT) - Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 20 V 29A (Ta), 104A (Tc) - 3.8mOhm @ 20A, 10V 1.5V @ 250µA 155 nC @ 10 V ±12V 4890 pF @ 10 V - 5.2W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFPS43N50K-GE3

SIHFPS43N50K-GE3

MOSFET N-CH 500V SUPER-247

Vishay Siliconix
3,462 -

RFQ

SIHFPS43N50K-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 90mOhm @ 28A, 10V 5V @ 250µA 350 nC @ 10 V ±30V 8310 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHS20N50C-E3

SIHS20N50C-E3

MOSFET N-CH 500V 20A SUPER247

Vishay Siliconix
3,730 -

RFQ

SIHS20N50C-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 10A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 2942 pF @ 25 V - 250mW (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG47N65E-GE3

SIHG47N65E-GE3

MOSFET N-CH 650V 47A TO247AC

Vishay Siliconix
3,877 -

RFQ

SIHG47N65E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 72mOhm @ 24A, 10V 4V @ 250µA 273 nC @ 10 V ±30V 5682 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB30N60AEL-GE3

SIHB30N60AEL-GE3

MOSFET N-CH 600V 28A TO263

Vishay Siliconix
3,006 -

RFQ

Tape & Reel (TR),Cut Tape (CT) EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 120mOhm @ 15A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2565 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP050N60E-GE3

SIHP050N60E-GE3

MOSFET N-CH 600V 51A TO220AB

Vishay Siliconix
3,460 -

RFQ

SIHP050N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW47N60EF-GE3

SIHW47N60EF-GE3

MOSFET N-CH 600V 47A TO247AD

Vishay Siliconix
2,214 -

RFQ

SIHW47N60EF-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 65mOhm @ 24A, 10V 4V @ 250µA 225 nC @ 10 V ±30V 4854 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW73N60E-GE3

SIHW73N60E-GE3

MOSFET N-CH 600V 73A TO247AD

Vishay Siliconix
2,143 -

RFQ

SIHW73N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 39mOhm @ 36A, 10V 4V @ 250µA 362 nC @ 10 V ±20V 7700 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG70N60AEF-GE3

SIHG70N60AEF-GE3

MOSFET N-CH 600V 60A TO247AC

Vishay Siliconix
2,923 -

RFQ

SIHG70N60AEF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 41mOhm @ 35A, 10V 4V @ 250µA 410 nC @ 10 V ±20V 5348 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW70N60EF-GE3

SIHW70N60EF-GE3

MOSFET N-CH 600V 70A TO247AD

Vishay Siliconix
2,912 -

RFQ

SIHW70N60EF-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 250µA 380 nC @ 10 V ±30V 7500 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG73N60E-E3

SIHG73N60E-E3

MOSFET N-CH 600V 73A TO247AC

Vishay Siliconix
2,708 -

RFQ

SIHG73N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 73A (Tc) 10V 39mOhm @ 36A, 10V 4V @ 250µA 362 nC @ 10 V ±30V 7700 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG70N60EF-GE3

SIHG70N60EF-GE3

MOSFET N-CH 600V 70A TO247AC

Vishay Siliconix
2,725 -

RFQ

SIHG70N60EF-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 250µA 380 nC @ 10 V ±30V 7500 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG64N65E-GE3

SIHG64N65E-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix
3,640 -

RFQ

SIHG64N65E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 32A, 10V 4V @ 250µA 369 nC @ 10 V ±30V 7497 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 Продукты
1800+
1800+ производители
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15,000+ Складские запасы
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