Vishay Siliconix SIHG70N60AEF-GE3

Номер детали
SIHG70N60AEF-GE3
Производитель
Vishay Siliconix
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-247AC
Технические
Нахождение ЧипаSIHG70N60AEF-GE3.pdf
Описание
MOSFET N-CH 600V 60A TO247AC
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SIHG70N60AEF-GE3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SIHG70N60AEF-GE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SIHG70N60AEF-GE3. All suppliers must pass our qualification reviews before they can publish their products including SIHG70N60AEF-GE3 on Нахождение Чипа; we pay more attention to the channels and quality of SIHG70N60AEF-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SIHG70N60AEF-GE3 price and inventory displayed accurate?

The price and inventory of SIHG70N60AEF-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SIHG70N60AEF-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SIHG70N60AEF-GE3 we delivered, we will accept the replacement or return of the SIHG70N60AEF-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SIHG70N60AEF-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SIHG70N60AEF-GE3 pin diagram, SIHG70N60AEF-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SIHB35N60EF-GE3 SIHH240N60E-T1-GE3 SIHA22N60EF-GE3 SIHG105N60EF-GE3 SIHB125N60EF-GE3
Номер детали SIHB35N60EF-GE3 SIHH240N60E-T1-GE3 SIHA22N60EF-GE3 SIHG105N60EF-GE3 SIHB125N60EF-GE3
Производитель Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tube Tube Tube Tube Tube
Series EF EF EF EF EF
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V 600 V 600 V 600 V 600 V
Current-ContinuousDrain(Id)@25°C 60A (Tc) 60A (Tc) 60A (Tc) 60A (Tc) 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 41mOhm @ 35A, 10V 41mOhm @ 35A, 10V 41mOhm @ 35A, 10V 41mOhm @ 35A, 10V 41mOhm @ 35A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 410 nC @ 10 V 410 nC @ 10 V 410 nC @ 10 V 410 nC @ 10 V 410 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 5348 pF @ 100 V 5348 pF @ 100 V 5348 pF @ 100 V 5348 pF @ 100 V 5348 pF @ 100 V
FETFeature - - - - -
PowerDissipation(Max) 417W (Tc) 417W (Tc) 417W (Tc) 417W (Tc) 417W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

SIHG70N60AEF-GE3 Актуальная информация

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