Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLU3110ZPBF

IRLU3110ZPBF

MOSFET N-CH 100V 42A IPAK

Infineon Technologies
5,165 -

RFQ

IRLU3110ZPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V ±16V 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9640PBF

IRF9640PBF

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix
8,137 -

RFQ

IRF9640PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740PBF

IRF740PBF

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
1,018 -

RFQ

IRF740PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD11NM65N

STD11NM65N

MOSFET N CH 650V 11A DPAK

STMicroelectronics
6,673 -

RFQ

STD11NM65N

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 455mOhm @ 5.5A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 800 pF @ 50 V - 110W (Tc) 150°C (TJ) Surface Mount
CSD16401Q5T

CSD16401Q5T

MOSFET N-CH 25V 100A 8VSON

Texas Instruments
605 -

RFQ

CSD16401Q5T

Технические

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Ta) 4.5V, 10V 1.6mOhm @ 40A, 10V 1.9V @ 250µA 29 nC @ 4.5 V +16V, -12V 4100 pF @ 12.5 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFI1310NPBF

IRFI1310NPBF

MOSFET N-CH 100V 24A TO220AB FP

Infineon Technologies
1,228 -

RFQ

IRFI1310NPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V 36mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1900 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM3N90CI C0G

TSM3N90CI C0G

MOSFET N-CH 900V 2.5A ITO220AB

Taiwan Semiconductor Corporation
2,211 -

RFQ

TSM3N90CI C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Tc) 10V 5.1Ohm @ 1.25A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 748 pF @ 25 V - 94W (Tc) 150°C (TJ) Through Hole
TSM4N60ECH C5G

TSM4N60ECH C5G

MOSFET N-CHANNEL 600V 4A TO251

Taiwan Semiconductor Corporation
2,461 -

RFQ

TSM4N60ECH C5G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 545 pF @ 25 V - 86.2W (Tc) 150°C (TJ) Through Hole
TSM4N70CH C5G

TSM4N70CH C5G

MOSFET N-CH 700V 3.5A TO251

Taiwan Semiconductor Corporation
3,671 -

RFQ

TSM4N70CH C5G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 3.3Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 595 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N70CI C0G

TSM4N70CI C0G

MOSFET N-CH 700V 3.5A ITO220AB

Taiwan Semiconductor Corporation
2,973 -

RFQ

TSM4N70CI C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 3.3Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 595 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N70CP ROG

TSM4N70CP ROG

MOSFET N-CH 700V 3.5A TO252

Taiwan Semiconductor Corporation
3,851 -

RFQ

TSM4N70CP ROG

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 700 V 3.5A (Tc) 10V 3.3Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 595 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM4N80CI C0G

TSM4N80CI C0G

MOSFET N-CH 800V 4A ITO220AB

Taiwan Semiconductor Corporation
2,338 -

RFQ

TSM4N80CI C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 955 pF @ 25 V - 38.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N80CZ C0G

TSM4N80CZ C0G

MOSFET N-CHANNEL 800V 4A TO220

Taiwan Semiconductor Corporation
2,137 -

RFQ

TSM4N80CZ C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 955 pF @ 25 V - 38.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4N90CI C0G

TSM4N90CI C0G

MOSFET N-CH 900V 4A ITO220AB

Taiwan Semiconductor Corporation
3,672 -

RFQ

TSM4N90CI C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 4Ohm @ 2A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 955 pF @ 25 V - 38.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4NB60CZ C0G

TSM4NB60CZ C0G

MOSFET N-CHANNEL 600V 4A TO220

Taiwan Semiconductor Corporation
3,946 -

RFQ

TSM4NB60CZ C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4.5V @ 250µA 14.5 nC @ 10 V ±30V 500 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4NC60CI C0G

TSM4NC60CI C0G

MOSFET N-CH 600V 4A ITO220AB

Taiwan Semiconductor Corporation
2,716 -

RFQ

TSM4NC60CI C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 654 pF @ 50 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP33N25

FDP33N25

MOSFET N-CH 250V 33A TO220-3

onsemi
4,723 -

RFQ

FDP33N25

Технические

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 94mOhm @ 16.5A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 2135 pF @ 25 V - 235W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU4615PBF

IRFU4615PBF

MOSFET N-CH 150V 33A IPAK

Infineon Technologies
1,344 -

RFQ

IRFU4615PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP9P25

FQP9P25

MOSFET P-CH 250V 9.4A TO220-3

onsemi
2,195 -

RFQ

FQP9P25

Технические

Tube QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 250 V 9.4A (Tc) 10V 620mOhm @ 4.7A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD6N80E-GE3

SIHD6N80E-GE3

MOSFET N-CH 800V 5.4A DPAK

Vishay Siliconix
1,566 -

RFQ

SIHD6N80E-GE3

Технические

Bulk E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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