| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPC60R380C6X7SA1MOSFET N-CH Infineon Technologies |
2,402 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
DMT3006LFVQ-13MOSFET N-CH 30V 60A POWERDI3333 Diodes Incorporated |
3,378 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 7mOhm @ 9A, 10V | 3V @ 250µA | 16.7 nC @ 10 V | ±20V | 1155 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPC60R380E6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,800 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
DMT3006LFVQ-7MOSFET N-CH 30V 60A POWERDI3333 Diodes Incorporated |
3,176 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 7mOhm @ 9A, 10V | 3V @ 250µA | 16.7 nC @ 10 V | ±20V | 1155 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPC60R380E6X7SA1MOSFET N-CH Infineon Technologies |
3,792 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
DMT68M8LPS-13MOSFET N-CH 60V PWRDI5060 Diodes Incorporated |
3,744 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14.1A (Ta), 69.2A (Tc) | 4.5V, 10V | 7.9mOhm @ 20A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 2078 pF @ 30 V | - | 2.4W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPC60R520E6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,559 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
CMS09N10D-HFMOSFET N-CH 60V 2.2A TO-252 Comchip Technology |
3,194 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.6A (Tc) | 10V | 140mOhm @ 6A, 10V | 2.5V @ 250µA | 15.5 nC @ 10 V | ±20V | 690 pF @ 25 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
TPC8129,LQ(SMOSFET P-CH 30V 9A 8SOP Toshiba Semiconductor and Storage |
2,736 | - |
RFQ |
Технические |
Tape & Reel (TR) | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 22mOhm @ 4.5A, 10V | 2V @ 200µA | 39 nC @ 10 V | +20V, -25V | 1650 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
IPC60R600E6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
2,423 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IPD135N03LGBTMA1LV POWER MOS Infineon Technologies |
2,097 | - |
RFQ |
Технические |
Tape & Reel (TR) | * | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPC60R950C6UNSAWNX6SA1MOSFET N-CH BARE DIE Infineon Technologies |
3,435 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
NVTFS012P03P8ZTAGPT8P PORTFOLIO EXPANSION onsemi |
2,279 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 11.3mOhm @ 10A, 10V | 3V @ 250µA | 36 nC @ 10 V | ±25V | 1535 pF @ 15 V | - | 860mW (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPS50R520CPAKMA1MOSFET N-CH 500V 7.1A TO251-3 Infineon Technologies |
3,906 | - |
RFQ |
Технические |
Bulk | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPS70R2K0CEE8211MOSFET N-CH Infineon Technologies |
3,226 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPW20N60C3E8177FKSA1MOSFET N-CH Infineon Technologies |
240,092 | - |
RFQ |
Bulk,Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
DMT8030LFDF-7MOSFET BVDSS: 61V~100V U-DFN2020 Diodes Incorporated |
3,105 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 7.5A (Ta) | 4.5V, 10V | 25mOhm @ 5A, 10V | 2.5V @ 250µA | 10.4 nC @ 10 V | ±20V | 641 pF @ 25 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMT10H032LFDF-7MOSFET BVDSS: 61V~100V U-DFN2020 Diodes Incorporated |
2,687 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Ta) | 4.5V, 10V | 32mOhm @ 6A, 10V | 2.5V @ 250µA | 11.9 nC @ 10 V | ±20V | 683 pF @ 50 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AONR21305CMOSFET P-CH 30V 8DFN Alpha & Omega Semiconductor Inc. |
2,122 | - |
RFQ |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
NVMFS040N10MCLT1GPTNG 100V LL SO8FL onsemi |
2,547 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.5A (Ta), 21A (Tc) | 4.5V, 10V | 38mOhm @ 5A, 10V | 3V @ 26µA | 8.3 nC @ 10 V | ±20V | 500 pF @ 50 V | - | 3.5W (Ta), 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |