Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AON6314

AON6314

MOSFET N-CHANNEL 30V 85A 8DFN

Alpha & Omega Semiconductor Inc.
2,335 -

RFQ

AON6314

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 85A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 2V @ 250µA 20 nC @ 4.5 V ±12V 1900 pF @ 15 V - 32.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH6016LK3Q-13

DMTH6016LK3Q-13

MOSFET N-CH 60V 10.8 TO252 T&R

Diodes Incorporated
3,851 -

RFQ

DMTH6016LK3Q-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 10.8A (Ta), 46.9A (Tc) 4.5V, 10V 17mOhm @ 10A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 864 pF @ 30 V - 3.2W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IXFH12N90P

IXFH12N90P

MOSFET N-CH 900V 12A TO247AD

IXYS
1,069 -

RFQ

IXFH12N90P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 12A (Tc) 10V 900mOhm @ 6A, 10V 6.5V @ 1mA 56 nC @ 10 V ±30V 3080 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP15N50L2

IXTP15N50L2

MOSFET N-CH 500V 15A TO220AB

IXYS
316 -

RFQ

IXTP15N50L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4.5V @ 250µA 123 nC @ 10 V ±20V 4080 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCA47N60

FCA47N60

MOSFET N-CH 600V 47A TO3PN

onsemi
571 -

RFQ

FCA47N60

Технические

Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M1000170J

C2M1000170J

SICFET N-CH 1700V 5.3A D2PAK

Wolfspeed, Inc.
2,792 -

RFQ

C2M1000170J

Технические

Bulk C2M™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.3A (Tc) 20V 1.4Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13 nC @ 20 V +25V, -10V 200 pF @ 1000 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075060K3S

UJ4C075060K3S

SICFET N-CH 750V 28A TO247-3

UnitedSiC
6,869 -

RFQ

UJ4C075060K3S

Технические

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 750 V 28A (Tc) - 74mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1422 pF @ 100 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
TPH3206PS

TPH3206PS

GANFET N-CH 600V 17A TO220AB

Transphorm
138 -

RFQ

TPH3206PS

Технические

Tube - Not For New Designs N-Channel GaNFET (Gallium Nitride) 600 V 17A (Tc) 10V 180mOhm @ 11A, 8V 2.6V @ 500µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480 V - 96W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW120R220M1HXKSA1

IMW120R220M1HXKSA1

SICFET N-CH 1.2KV 13A TO247-3

Infineon Technologies
210 -

RFQ

IMW120R220M1HXKSA1

Технические

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 13A (Tc) 15V, 18V 286mOhm @ 4A, 18V 5.7V @ 1.6mA 8.5 nC @ 18 V +23V, -7V 289 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C120150K3S

UJ3C120150K3S

SICFET N-CH 1200V 18.4A TO247-3

UnitedSiC
960 -

RFQ

UJ3C120150K3S

Технические

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 18.4A (Tc) 12V 180mOhm @ 5A, 12V 5.5V @ 10mA 30 nC @ 15 V ±25V 738 pF @ 100 V - 166.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH30N60P

IXTH30N60P

MOSFET N-CH 600V 30A TO247

IXYS
482 -

RFQ

IXTH30N60P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 5V @ 250µA 82 nC @ 10 V ±30V 5050 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R060C7XKSA1

IPP60R060C7XKSA1

MOSFET N-CH 600V 35A TO220-3

Infineon Technologies
347 -

RFQ

IPP60R060C7XKSA1

Технические

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
G3R60MT07K

G3R60MT07K

750V 60M TO-247-4 G3R SIC MOSFET

GeneSiC Semiconductor
135 -

RFQ

G3R60MT07K

Технические

Tube G3R™ Active - SiCFET (Silicon Carbide) 750 V - - - - - - - - - - Through Hole
STW34NM60N

STW34NM60N

MOSFET N-CH 600V 29A TO247-3

STMicroelectronics
3,481 -

RFQ

STW34NM60N

Технические

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 80 nC @ 10 V ±25V 2722 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
FCH041N60E

FCH041N60E

MOSFET N-CH 600V 77A TO247-3

onsemi
448 -

RFQ

FCH041N60E

Технические

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 39A, 10V 3.5V @ 250µA 380 nC @ 10 V ±20V 13700 pF @ 100 V - 592W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA130N15X4

IXTA130N15X4

MOSFET N-CH 150V 130A TO263AA

IXYS
1,562 -

RFQ

IXTA130N15X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 8mOhm @ 65A, 10V 4.5V @ 250µA 87 nC @ 10 V ±20V 4770 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0120090J

C3M0120090J

SICFET N-CH 900V 22A D2PAK-7

Wolfspeed, Inc.
7,112 -

RFQ

C3M0120090J

Технические

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075033K4S

UJ4C075033K4S

750V/33MOHM, SIC, CASCODE, G4, T

UnitedSiC
526 -

RFQ

UJ4C075033K4S

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 47A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH18N90P

IXFH18N90P

MOSFET N-CH 900V 18A TO247AD

IXYS
300 -

RFQ

IXFH18N90P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 18A (Tc) 10V 600mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5230 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
LSIC1MO120E0160

LSIC1MO120E0160

SICFET N-CH 1200V 22A TO247-3

Littelfuse Inc.
1,154 -

RFQ

LSIC1MO120E0160

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 20V 200mOhm @ 10A, 20V 4V @ 5mA 57 nC @ 20 V +22V, -6V 870 pF @ 800 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
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