| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD60R210CFD7ATMA1MOSFET N CH Infineon Technologies |
4,996 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 210mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1015 pF @ 400 V | - | 64W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDMS039N08BMOSFET N-CH 80V 19.4A/100A 8PQFN onsemi |
12,863 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 19.4A (Ta), 100A (Tc) | 10V | 3.9mOhm @ 50A, 10V | 4.5V @ 250µA | 100 nC @ 10 V | ±20V | 7600 pF @ 40 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
STP4NK60ZMOSFET N-CH 600V 4A TO220AB STMicroelectronics |
1,012 | - |
RFQ |
Технические |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4.5V @ 50µA | 26 nC @ 10 V | ±30V | 510 pF @ 25 V | - | 70W (Tc) | 150°C (TJ) | Through Hole |
|
NTBS9D0N10MCMOSFET N-CH 100V 14A/60A TO263 onsemi |
3,755 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 60A (Tc) | 6V, 10V | 9mOhm @ 23A, 10V | 4V @ 131µA | 23 nC @ 10 V | ±20V | 1695 pF @ 50 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRF634PBFMOSFET N-CH 250V 8.1A TO220AB Vishay Siliconix |
1,893 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFU024PBFMOSFET N-CH 60V 14A TO251AA Vishay Siliconix |
1,272 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STF10N60DM2MOSFET N-CH 600V 8A TO220FP STMicroelectronics |
1,498 | - |
RFQ |
Технические |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±25V | 529 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF6785MTRPBFMOSFET N-CH 200V 3.4A DIRECTFET Infineon Technologies |
9,600 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.4A (Ta), 19A (Tc) | 10V | 100mOhm @ 4.2A, 10V | 5V @ 100µA | 36 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
TK200F04N1L,LXGQMOSFET N-CH 40V 200A TO220SM Toshiba Semiconductor and Storage |
1,999 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 0.9mOhm @ 100A, 10V | 3V @ 1mA | 214 nC @ 10 V | ±20V | 14920 pF @ 10 V | - | 375W (Tc) | 175°C | Surface Mount |
|
IRF840APBF-BE3MOSFET N-CH 500V 8A TO220AB Vishay Siliconix |
1,034 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
NVD3055-094T4G-VF01MOSFET N-CH 60V 12A DPAK onsemi |
2,218 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 10V | 94mOhm @ 6A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 1.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
ISP13DP06NMSATMA1MOSFET P-CH 60V SOT223 Infineon Technologies |
3,291 | - |
RFQ |
Технические |
Tape & Reel (TR) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.8A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount |
|
FDS5690MOSFET N-CH 60V 7A 8SOIC onsemi |
3,799 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta) | 6V, 10V | 28mOhm @ 7A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1107 pF @ 30 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP3018SFK-7MOSFET P-CH 30V 10.2A 6UDFN Diodes Incorporated |
3,125 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.2A (Ta) | 4.5V, 10V | 14.5mOhm @ 9.5A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±25V | 4414 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMT10H032LFVW-7MOSFET BVDSS: 61V~100V POWERDI33 Diodes Incorporated |
2,224 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4.5V, 10V | 32mOhm @ 10A, 10V | 2.5V @ 250µA | 11.9 nC @ 10 V | ±20V | 683 pF @ 50 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank |
|
DMT10H032LFVW-13MOSFET BVDSS: 61V~100V POWERDI33 Diodes Incorporated |
3,748 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4.5V, 10V | 32mOhm @ 10A, 10V | 2.5V @ 250µA | 11.9 nC @ 10 V | ±20V | 683 pF @ 50 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank |
|
SI4420BDY-T1-GE3MOSFET N-CH 30V 9.5A 8SO Vishay Siliconix |
2,067 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9.5A (Ta) | 4.5V, 10V | 8.5mOhm @ 13.5A, 10V | 3V @ 250µA | 50 nC @ 10 V | ±20V | - | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PSMN6R7-40MSDXMOSFET N-CH 40V 50A LFPAK33 Nexperia USA Inc. |
3,089 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta) | 10V | 6.7mOhm @ 20A, 10V | 3.6V @ 1mA | 22 nC @ 10 V | ±20V | 1642 pF @ 20 V | - | 65W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
NVMFS021N10MCLT1GPTNG 100V LL SO8FL onsemi |
3,246 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.4A (Ta), 31A (Tc) | 4.5V, 10V | 23mOhm @ 7A, 10V | 3V @ 42µA | 13 nC @ 10 V | ±20V | 850 pF @ 50 V | - | 3.6W (Ta), 49W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
DMTH6010SPS-13MOSFET N-CH 60V PWRDI5060 Diodes Incorporated |
2,961 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13.5A (Ta), 100A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 38.1 nC @ 10 V | ±20V | 2841 pF @ 30 V | - | 2.6W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |