| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TPN4R303NL,L1QMOSFET N-CH 30V 40A 8TSON Toshiba Semiconductor and Storage |
2,817 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 700mW (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount |
|
DMP3007LSS-13MOSFET P-CH 30V 14A 8SO T&R 2 Diodes Incorporated |
3,678 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4V, 10V | 7mOhm @ 17A, 10V | 2.8V @ 250µA | 64.2 nC @ 10 V | ±25V | 2826 pF @ 15 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ISP25DP06NMXTSA1MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
3,941 | - |
RFQ |
Tape & Reel (TR) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 10V | 250mOhm @ 1.9A, 10V | 4V @ 270µA | 10.8 nC @ 10 V | ±20V | 420 pF @ 30 V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
DMPH6050SFGQ-13MOSFET P-CH 60V PWRDI3333 Diodes Incorporated |
2,670 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.1A (Ta), 18A (Tc) | 4.5V, 10V | 50mOhm @ 7A, 10V | 3V @ 250µA | 24.1 nC @ 10 V | ±20V | 1293 pF @ 30 V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
DMTH10H025LPSQ-13MOSFET N-CH 100V PWRDI5060 Diodes Incorporated |
3,526 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.3A (Ta), 45A (Tc) | 6V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 1477 pF @ 50 V | - | 3.2W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
AOTF8T50PLMOSFET N-CH 500V 8A TO220F Alpha & Omega Semiconductor Inc. |
3,777 | - |
RFQ |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 810mOhm @ 4A, 10V | 5V @ 250µA | 19 nC @ 10 V | ±30V | 905 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
AO3416LMOSFET N-CH 20V 6.5A SOT23-3 Alpha & Omega Semiconductor Inc. |
2,701 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 1.8V, 4.5V | 22mOhm @ 6.5A, 4.5V | 1V @ 250µA | 16 nC @ 4.5 V | ±8V | 1160 pF @ 10 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SIHA186N60EF-GE3MOSFET N-CH 600V 8.4A TO220 Vishay Siliconix |
2,000 | - |
RFQ |
Технические |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tc) | 10V | 193mOhm @ 9.5A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1081 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFIBC30GPBFMOSFET N-CH 600V 2.5A TO220-3 Vishay Siliconix |
4,084 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.5A (Tc) | 10V | 2.2Ohm @ 1.5A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
STP25N60M2-EPMOSFET N-CH 600V 18A TO220 STMicroelectronics |
174 | - |
RFQ |
Технические |
Tube | MDmesh™ M2-EP | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29 nC @ 10 V | ±25V | 1090 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM60NB900CH C5GMOSFET N-CHANNEL 600V 4A TO251 Taiwan Semiconductor Corporation |
14,043 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 900mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6 nC @ 10 V | ±30V | 315 pF @ 100 V | - | 36.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXTA24P085TMOSFET P-CH 85V 24A TO263 IXYS |
5,814 | - |
RFQ |
Технические |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 85 V | 24A (Tc) | 10V | 65mOhm @ 12A, 10V | 4.5V @ 250µA | 41 nC @ 10 V | ±15V | 2090 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFI740GPBFMOSFET N-CH 400V 5.4A TO220-3 Vishay Siliconix |
1,686 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.4A (Tc) | 10V | 550mOhm @ 3.2A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 1370 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFS11N50APBFMOSFET N-CH 500V 11A D2PAK Vishay Siliconix |
984 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
STU6N95K5MOSFET N-CH 950V 9A IPAK STMicroelectronics |
1,410 | - |
RFQ |
Технические |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13 nC @ 10 V | ±30V | 450 pF @ 100 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHP15N60E-GE3MOSFET N-CH 600V 15A TO220AB Vishay Siliconix |
682 | - |
RFQ |
Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHB186N60EF-GE3MOSFET N-CH 600V 8.4A D2PAK Vishay Siliconix |
3,000 | - |
RFQ |
Технические |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tc) | 10V | 193mOhm @ 9.5A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1081 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFI840GLCPBFMOSFET N-CH 500V 4.5A TO220-3 Vishay Siliconix |
990 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 850mOhm @ 2.7A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FDPF20N50TMOSFET N-CH 500V 20A TO220F onsemi |
803 | - |
RFQ |
Технические |
Tube | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 230mOhm @ 10A, 10V | 5V @ 250µA | 59.5 nC @ 10 V | ±30V | 3120 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STF24N65M2MOSFET N-CH 650V 16A TO220FP STMicroelectronics |
286 | - |
RFQ |
Технические |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 16A (Tc) | 10V | 230mOhm @ 8A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |