Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TPN4R303NL,L1Q

TPN4R303NL,L1Q

MOSFET N-CH 30V 40A 8TSON

Toshiba Semiconductor and Storage
2,817 -

RFQ

TPN4R303NL,L1Q

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4.3mOhm @ 20A, 10V 2.3V @ 200µA 14.8 nC @ 10 V ±20V 1400 pF @ 15 V - 700mW (Ta), 34W (Tc) 150°C (TJ) Surface Mount
DMP3007LSS-13

DMP3007LSS-13

MOSFET P-CH 30V 14A 8SO T&R 2

Diodes Incorporated
3,678 -

RFQ

DMP3007LSS-13

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4V, 10V 7mOhm @ 17A, 10V 2.8V @ 250µA 64.2 nC @ 10 V ±25V 2826 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISP25DP06NMXTSA1

ISP25DP06NMXTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
3,941 -

RFQ

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 10V 250mOhm @ 1.9A, 10V 4V @ 270µA 10.8 nC @ 10 V ±20V 420 pF @ 30 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMPH6050SFGQ-13

DMPH6050SFGQ-13

MOSFET P-CH 60V PWRDI3333

Diodes Incorporated
2,670 -

RFQ

DMPH6050SFGQ-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 6.1A (Ta), 18A (Tc) 4.5V, 10V 50mOhm @ 7A, 10V 3V @ 250µA 24.1 nC @ 10 V ±20V 1293 pF @ 30 V - 1.2W (Ta) -55°C ~ 175°C (TJ) Surface Mount
DMTH10H025LPSQ-13

DMTH10H025LPSQ-13

MOSFET N-CH 100V PWRDI5060

Diodes Incorporated
3,526 -

RFQ

DMTH10H025LPSQ-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 9.3A (Ta), 45A (Tc) 6V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1477 pF @ 50 V - 3.2W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOTF8T50PL

AOTF8T50PL

MOSFET N-CH 500V 8A TO220F

Alpha & Omega Semiconductor Inc.
3,777 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 810mOhm @ 4A, 10V 5V @ 250µA 19 nC @ 10 V ±30V 905 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
AO3416L

AO3416L

MOSFET N-CH 20V 6.5A SOT23-3

Alpha & Omega Semiconductor Inc.
2,701 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 1.8V, 4.5V 22mOhm @ 6.5A, 4.5V 1V @ 250µA 16 nC @ 4.5 V ±8V 1160 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHA186N60EF-GE3

SIHA186N60EF-GE3

MOSFET N-CH 600V 8.4A TO220

Vishay Siliconix
2,000 -

RFQ

SIHA186N60EF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC30GPBF

IRFIBC30GPBF

MOSFET N-CH 600V 2.5A TO220-3

Vishay Siliconix
4,084 -

RFQ

IRFIBC30GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Tc) 10V 2.2Ohm @ 1.5A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP25N60M2-EP

STP25N60M2-EP

MOSFET N-CH 600V 18A TO220

STMicroelectronics
174 -

RFQ

STP25N60M2-EP

Технические

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB900CH C5G

TSM60NB900CH C5G

MOSFET N-CHANNEL 600V 4A TO251

Taiwan Semiconductor Corporation
14,043 -

RFQ

TSM60NB900CH C5G

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA24P085T

IXTA24P085T

MOSFET P-CH 85V 24A TO263

IXYS
5,814 -

RFQ

IXTA24P085T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 24A (Tc) 10V 65mOhm @ 12A, 10V 4.5V @ 250µA 41 nC @ 10 V ±15V 2090 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI740GPBF

IRFI740GPBF

MOSFET N-CH 400V 5.4A TO220-3

Vishay Siliconix
1,686 -

RFQ

IRFI740GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.4A (Tc) 10V 550mOhm @ 3.2A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1370 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS11N50APBF

IRFS11N50APBF

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix
984 -

RFQ

IRFS11N50APBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU6N95K5

STU6N95K5

MOSFET N-CH 950V 9A IPAK

STMicroelectronics
1,410 -

RFQ

STU6N95K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 1.25Ohm @ 3A, 10V 5V @ 100µA 13 nC @ 10 V ±30V 450 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP15N60E-GE3

SIHP15N60E-GE3

MOSFET N-CH 600V 15A TO220AB

Vishay Siliconix
682 -

RFQ

SIHP15N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB186N60EF-GE3

SIHB186N60EF-GE3

MOSFET N-CH 600V 8.4A D2PAK

Vishay Siliconix
3,000 -

RFQ

SIHB186N60EF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI840GLCPBF

IRFI840GLCPBF

MOSFET N-CH 500V 4.5A TO220-3

Vishay Siliconix
990 -

RFQ

IRFI840GLCPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 850mOhm @ 2.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF20N50T

FDPF20N50T

MOSFET N-CH 500V 20A TO220F

onsemi
803 -

RFQ

FDPF20N50T

Технические

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 230mOhm @ 10A, 10V 5V @ 250µA 59.5 nC @ 10 V ±30V 3120 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF24N65M2

STF24N65M2

MOSFET N-CH 650V 16A TO220FP

STMicroelectronics
286 -

RFQ

STF24N65M2

Технические

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 230mOhm @ 8A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
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