Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP28N15P

IXTP28N15P

MOSFET N-CH TO-220

IXYS
2,400 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
DMTH6006SPS-13

DMTH6006SPS-13

MOSFET N-CH 60V PWRDI5060

Diodes Incorporated
2,873 -

RFQ

DMTH6006SPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17.8A (Ta), 100A (Tc) 10V 6.2mOhm @ 10.5A, 10V 4V @ 250µA 27.9 nC @ 10 V ±20V 1721 pF @ 30 V - 2.94W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7792DP-T1-GE3

SI7792DP-T1-GE3

MOSFET N-CH 30V 40.6A/60A PPAK

Vishay Siliconix
2,447 -

RFQ

SI7792DP-T1-GE3

Технические

Tape & Reel (TR) SkyFET®, TrenchFET® Gen III Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40.6A (Ta), 60A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 4735 pF @ 15 V Schottky Diode (Body) 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPC3730CTR

CPC3730CTR

MOSFET N-CH 350V SOT89

IXYS Integrated Circuits Division
2,067 -

RFQ

CPC3730CTR

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 350 V 140mA (Ta) - 35Ohm @ 140mA, 0V - - - 200 pF @ 25 V Depletion Mode - - Surface Mount
NTTFS4932NTAG

NTTFS4932NTAG

MOSFET N-CH 30V 11A/79A 8WDFN

onsemi
131,187 -

RFQ

NTTFS4932NTAG

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 79A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.2V @ 250µA 46.5 nC @ 10 V ±20V 3111 pF @ 15 V - 850mW (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ZXMN6A08GQTA

ZXMN6A08GQTA

MOSFET N-CH 60V 3.8A SOT223

Diodes Incorporated
3,716 -

RFQ

ZXMN6A08GQTA

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 3.8A (Ta) 4.5V, 10V 80mOhm @ 4.8A, 10V 1V @ 250µA 5.8 nC @ 10 V ±20V 459 pF @ 40 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT10H009SPS-13

DMT10H009SPS-13

MOSFET N-CH 100V PWRDI5060

Diodes Incorporated
2,379 -

RFQ

DMT10H009SPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 80A (Tc) 10V 8.5mOhm @ 20A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 2085 pF @ 50 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT8008SPS-13

DMT8008SPS-13

MOSFET N-CH 80V 83A PWRDI5060-8

Diodes Incorporated
2,745 -

RFQ

DMT8008SPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 83A (Tc) 6V, 10V 7.8mOhm @ 14A, 10V 4V @ 1mA 34 nC @ 10 V ±20V 1950 pF @ 40 V - 1.3W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH10H009LPS-13

DMTH10H009LPS-13

MOSFET N-CH 100V PWRDI5060

Diodes Incorporated
2,591 -

RFQ

DMTH10H009LPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 100A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 40.2 nC @ 10 V ±20V 2309 pF @ 50 V - 1.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH8008LPS-13

DMTH8008LPS-13

MOSFET N-CH 80V 91A PWRDI5060-8

Diodes Incorporated
2,721 -

RFQ

DMTH8008LPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 91A (Tc) 4.5V, 10V 7.8mOhm @ 14A, 10V 2.8V @ 1mA 41.2 nC @ 10 V ±20V 2345 pF @ 40 V - 1.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH8008SPS-13

DMTH8008SPS-13

MOSFET N-CH 80V 92A PWRDI5060-8

Diodes Incorporated
3,829 -

RFQ

DMTH8008SPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 92A (Tc) 6V, 10V 7.8mOhm @ 14A, 10V 4V @ 1mA 34 nC @ 10 V ±20V 1950 pF @ 40 V - 1.6W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMT10H9M9SPSW-13

DMT10H9M9SPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated
2,984 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
DMT10H9M9LPSW-13

DMT10H9M9LPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated
3,433 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
DMT10H009SCG-13

DMT10H009SCG-13

MOSFET BVDSS: 61V~100V V-DFN3333

Diodes Incorporated
2,211 -

RFQ

DMT10H009SCG-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 48A (Tc) 10V 9.5mOhm @ 20A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 2085 pF @ 50 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT10H009SCG-7

DMT10H009SCG-7

MOSFET BVDSS: 61V~100V V-DFN3333

Diodes Incorporated
2,756 -

RFQ

DMT10H009SCG-7

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Ta), 48A (Tc) 10V 9.5mOhm @ 20A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 2085 pF @ 50 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5N50FTM-WS

FDD5N50FTM-WS

MOSFET N-CH 500V 3.5A DPAK

onsemi
3,147 -

RFQ

FDD5N50FTM-WS

Технические

Tape & Reel (TR) * Last Time Buy - - - - - - - - - - - - - -
SI7794DP-T1-GE3

SI7794DP-T1-GE3

MOSFET N-CH 30V 28.6A/60A PPAK

Vishay Siliconix
3,036 -

RFQ

SI7794DP-T1-GE3

Технические

Tape & Reel (TR) SkyFET®, TrenchFET® Gen III Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28.6A (Ta), 60A (Tc) 4.5V, 10V 3.4mOhm @ 20A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2520 pF @ 15 V Schottky Diode (Body) 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB22N60S-GE3

SIHB22N60S-GE3

MOSFET N-CH 600V 22A D2PAK

Vishay Siliconix
3,837 -

RFQ

SIHB22N60S-GE3

Технические

Tape & Reel (TR) S Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 190mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2810 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP80N70F4

STP80N70F4

MOSFET N-CH 68V 85A TO220AB

STMicroelectronics
2,077 -

RFQ

STP80N70F4

Технические

Tube DeepGATE™, STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 68 V 85A (Tc) 10V 9.8mOhm @ 40A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 5600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF100P218XKMA1

IRF100P218XKMA1

MOSFET N-CH 100V 209A TO247AC

Infineon Technologies
2,874 -

RFQ

IRF100P218XKMA1

Технические

Tube StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 209A (Tc) 6V, 10V 1.28mOhm @ 100A, 10V 3.8V @ 278µA 555 nC @ 10 V ±20V 25000 pF @ 50 V - 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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