Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3410TRRPBF

IRLR3410TRRPBF

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
3,895 -

RFQ

IRLR3410TRRPBF

Технические

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R045C7XKSA1

IPA65R045C7XKSA1

MOSFET N-CH 650V 18A TO220-FP

Infineon Technologies
389 -

RFQ

IPA65R045C7XKSA1

Технические

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR812TRPBF

IRFR812TRPBF

MOSFET N-CH 500V 3.6A DPAK

Infineon Technologies
3,631 -

RFQ

IRFR812TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 5V @ 250µA 20 nC @ 10 V ±20V 810 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCTWA20N120

SCTWA20N120

IC POWER MOSFET 1200V HIP247

STMicroelectronics
593 -

RFQ

SCTWA20N120

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 239mOhm @ 10A, 20V 3.5V @ 1mA (Typ) 45 nC @ 20 V +25V, -10V 650 pF @ 400 V - 175W (Tc) -55°C ~ 200°C (TJ) Through Hole
R6050JNZ4C13

R6050JNZ4C13

MOSFET N-CH 600V 50A TO247G

Rohm Semiconductor
596 -

RFQ

R6050JNZ4C13

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 15V 83mOhm @ 25A, 15V 7V @ 5mA 120 nC @ 15 V ±30V 4500 pF @ 100 V - 615W (Tc) 150°C (TJ) Through Hole
IXFH26N100X

IXFH26N100X

MOSFET N-CH 1000V 26A TO247

IXYS
242 -

RFQ

IXFH26N100X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 320mOhm @ 13A, 10V 6V @ 4mA 113 nC @ 10 V ±30V 3290 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK48N60P

IXFK48N60P

MOSFET N-CH 600V 48A TO264AA

IXYS
200 -

RFQ

IXFK48N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 135mOhm @ 500mA, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH18N100Q3

IXFH18N100Q3

MOSFET N-CH 1000V 18A TO247AD

IXYS
217 -

RFQ

IXFH18N100Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 660mOhm @ 9A, 10V 6.5V @ 4mA 90 nC @ 10 V ±30V 4890 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6076ENZ4C13

R6076ENZ4C13

MOSFET N-CH 600V 76A TO247

Rohm Semiconductor
599 -

RFQ

R6076ENZ4C13

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 42mOhm @ 44.4A, 10V 4V @ 1mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 735W (Tc) 150°C (TJ) Through Hole
R6076KNZ4C13

R6076KNZ4C13

MOSFET N-CH 600V 76A TO247

Rohm Semiconductor
557 -

RFQ

R6076KNZ4C13

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 42mOhm @ 44.4A, 10V 5V @ 1mA 165 nC @ 10 V ±20V 7400 pF @ 25 V - 735W (Tc) 150°C (TJ) Through Hole
IXFX44N80P

IXFX44N80P

MOSFET N-CH 800V 44A PLUS247-3

IXYS
290 -

RFQ

IXFX44N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 44A (Tc) 10V 190mOhm @ 22A, 10V 5V @ 8mA 198 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB041PW C1G

TSM60NB041PW C1G

MOSFET N-CHANNEL 600V 78A TO247

Taiwan Semiconductor Corporation
2,489 -

RFQ

TSM60NB041PW C1G

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 78A (Tc) 10V 41mOhm @ 21.7A, 10V 4V @ 250µA 139 nC @ 10 V ±30V 6120 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK27N80Q

IXFK27N80Q

MOSFET N-CH 800V 27A TO264AA

IXYS
183 -

RFQ

IXFK27N80Q

Технические

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 800 V 27A (Tc) 10V 320mOhm @ 500mA, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 7600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPWS65R035CFD7AXKSA1

IPWS65R035CFD7AXKSA1

MOSFET N-CH 650V 63A TO247-3-41

Infineon Technologies
166 -

RFQ

IPWS65R035CFD7AXKSA1

Технические

Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 35mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -40°C ~ 150°C (TJ) Through Hole
2N7002A

2N7002A

MOSFET N-CH 60V 280MA SOT23-3

Diotec Semiconductor
470,795 -

RFQ

2N7002A

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 280mA (Ta) 5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 250µA - ±30V 50 pF @ 25 V - 350mW (Ta) 150°C (TJ) Surface Mount
MMBT7002K

MMBT7002K

MOSFET N-CH 60V 300MA SOT23-3

Diotec Semiconductor
3,000 -

RFQ

MMBT7002K

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 3Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP65H11D0HSS-13

DMP65H11D0HSS-13

MOSFET BVDSS: 501V~650V SO-8 T&R

Diodes Incorporated
2,469 -

RFQ

DMP65H11D0HSS-13

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 600 V 270mA (Ta) 10V 11Ohm @ 270mA, 10V 4V @ 250µA 13 nC @ 10 V ±30V 670 pF @ 25 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMTH6005LFG-13

DMTH6005LFG-13

MOSFET N-CH 60V 19.7A/100A PWRDI

Diodes Incorporated
3,452 -

RFQ

DMTH6005LFG-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 19.7A (Ta), 100A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.5V @ 250µA 48.7 nC @ 10 V ±20V 3150 pF @ 30 V - 2.38W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH6005LFG-7

DMTH6005LFG-7

MOSFET N-CH 60V 19.7A/100A PWRDI

Diodes Incorporated
3,853 -

RFQ

DMTH6005LFG-7

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 19.7A (Ta), 100A (Tc) 4.5V, 10V 4.1mOhm @ 20A, 10V 2.5V @ 250µA 48.7 nC @ 10 V ±20V 3150 pF @ 30 V - 2.38W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU024NPBF

IRFU024NPBF

MOSFET N-CH 55V 17A IPAK

Infineon Technologies
2,908 -

RFQ

IRFU024NPBF

Технические

Bulk,Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь