Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMS86101E

FDMS86101E

MOSFET N-CH 100V 12.4A/60A 8PQFN

onsemi
2,319 -

RFQ

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12.4A (Ta), 60A (Tc) 6V, 10V 8mOhm @ 13A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 3000 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM2311CX-01 RFG

TSM2311CX-01 RFG

MOSFET P-CH 20V 4A SOT23

Taiwan Semiconductor Corporation
3,736 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 55mOhm @ 4A, 4.5V 1.4V @ 250µA 9 nC @ 4.5 V ±8V 640 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TSM10N60CI C0

TSM10N60CI C0

MOSFET N-CH 600V 10A ITO220

Taiwan Semiconductor Corporation
3,724 -

RFQ

TSM10N60CI C0

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10N60CI C0G

TSM10N60CI C0G

MOSFET N-CH 600V 10A ITO220

Taiwan Semiconductor Corporation
3,409 -

RFQ

TSM10N60CI C0G

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS4934NT3G

NTMFS4934NT3G

MOSFET N-CH 30V 147A SO8FL

onsemi
4,975 -

RFQ

NTMFS4934NT3G

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.1A (Ta), 147A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2.2V @ 250µA 34 nC @ 4.5 V ±20V 5505 pF @ 15 V - 930mW (Ta), 69.44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5832NLT1G

NVMFS5832NLT1G

MOSFET N-CH 40V 120A SO8FL

onsemi
3,877 -

RFQ

NVMFS5832NLT1G

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
NVA4153NT1G

NVA4153NT1G

MOSFET N-CH 20V 0.915A SC75

onsemi
3,154 -

RFQ

NVA4153NT1G

Технические

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
NVMFS5826NLT1G

NVMFS5826NLT1G

MOSFET N-CH 60V 26A SO8FL

onsemi
2,143 -

RFQ

NVMFS5826NLT1G

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
NVTFS5826NLTWG

NVTFS5826NLTWG

MOSFET N-CH 60V 20A 8WDFN

onsemi
3,249 -

RFQ

NVTFS5826NLTWG

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
R6515KNZC8

R6515KNZC8

MOSFET N-CH 650V 15A TO3

Rohm Semiconductor
3,819 -

RFQ

R6515KNZC8

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
STL36N60DM6

STL36N60DM6

MOSFET N-CH 600V 15A PWRFLAT HV

STMicroelectronics
3,349 -

RFQ

Tape & Reel (TR) MDmesh™ DM6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 215mOhm @ 7.5A, 10V 4.75V @ 250µA 24 nC @ 10 V ±25V 940 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPH3206LDG-TR

TPH3206LDG-TR

GANFET N-CH 600V 17A 3PQFN

Transphorm
3,285 -

RFQ

TPH3206LDG-TR

Технические

Tray - Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 17A (Tc) 8V 180mOhm @ 11A, 8V 2.6V @ 500µA 9.3 nC @ 4.5 V ±18V 760 pF @ 480 V - 96W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TP65H150G4LSG

TP65H150G4LSG

GAN FET N-CH 650V PQFN

Transphorm
2,379 -

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 650 V 13A (Tc) 10V 180mOhm @ 8.5A, 10V 4.8V @ 500µA 8 nC @ 10 V ±20V 598 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM10N60CZ C0

TSM10N60CZ C0

MOSFET N-CH 600V 10A TO220

Taiwan Semiconductor Corporation
2,041 -

RFQ

TSM10N60CZ C0

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10N60CZ C0G

TSM10N60CZ C0G

MOSFET N-CH 600V 10A TO220

Taiwan Semiconductor Corporation
3,068 -

RFQ

TSM10N60CZ C0G

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM22P10CI C0G

TSM22P10CI C0G

MOSFET P-CH 100V 22A ITO220

Taiwan Semiconductor Corporation
3,217 -

RFQ

TSM22P10CI C0G

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 48W (Tc) 150°C (TJ) Through Hole
TSM22P10CZ C0G

TSM22P10CZ C0G

MOSFET P-CH 100V 22A TO220

Taiwan Semiconductor Corporation
2,882 -

RFQ

TSM22P10CZ C0G

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 125W (Tc) 150°C (TJ) Through Hole
TSM230N06CI C0G

TSM230N06CI C0G

MOSFET N-CH 60V 50A ITO220

Taiwan Semiconductor Corporation
2,759 -

RFQ

TSM230N06CI C0G

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 25 V - 42W (Tc) 150°C (TJ) Through Hole
PMV77EN215

PMV77EN215

SMALL SIGNAL FET

NXP USA Inc.
21,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
TSM230N06CZ C0G

TSM230N06CZ C0G

MOSFET N-CH 60V 50A TO220

Taiwan Semiconductor Corporation
3,148 -

RFQ

TSM230N06CZ C0G

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 25 V - 104W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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