| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMS86101EMOSFET N-CH 100V 12.4A/60A 8PQFN onsemi |
2,319 | - |
RFQ |
Tape & Reel (TR) | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 12.4A (Ta), 60A (Tc) | 6V, 10V | 8mOhm @ 13A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
TSM2311CX-01 RFGMOSFET P-CH 20V 4A SOT23 Taiwan Semiconductor Corporation |
3,736 | - |
RFQ |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | 1.4V @ 250µA | 9 nC @ 4.5 V | ±8V | 640 pF @ 6 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
TSM10N60CI C0MOSFET N-CH 600V 10A ITO220 Taiwan Semiconductor Corporation |
3,724 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8 nC @ 10 V | ±30V | 1738 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM10N60CI C0GMOSFET N-CH 600V 10A ITO220 Taiwan Semiconductor Corporation |
3,409 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8 nC @ 10 V | ±30V | 1738 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NTMFS4934NT3GMOSFET N-CH 30V 147A SO8FL onsemi |
4,975 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.1A (Ta), 147A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2.2V @ 250µA | 34 nC @ 4.5 V | ±20V | 5505 pF @ 15 V | - | 930mW (Ta), 69.44W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NVMFS5832NLT1GMOSFET N-CH 40V 120A SO8FL onsemi |
3,877 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVA4153NT1GMOSFET N-CH 20V 0.915A SC75 onsemi |
3,154 | - |
RFQ |
Технические |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVMFS5826NLT1GMOSFET N-CH 60V 26A SO8FL onsemi |
2,143 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVTFS5826NLTWGMOSFET N-CH 60V 20A 8WDFN onsemi |
3,249 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
R6515KNZC8MOSFET N-CH 650V 15A TO3 Rohm Semiconductor |
3,819 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | 150°C (TJ) | Through Hole |
|
STL36N60DM6MOSFET N-CH 600V 15A PWRFLAT HV STMicroelectronics |
3,349 | - |
RFQ |
Tape & Reel (TR) | MDmesh™ DM6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 215mOhm @ 7.5A, 10V | 4.75V @ 250µA | 24 nC @ 10 V | ±25V | 940 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
TPH3206LDG-TRGANFET N-CH 600V 17A 3PQFN Transphorm |
3,285 | - |
RFQ |
Технические |
Tray | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 8V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
TP65H150G4LSGGAN FET N-CH 650V PQFN Transphorm |
2,379 | - |
RFQ |
Tray | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 8.5A, 10V | 4.8V @ 500µA | 8 nC @ 10 V | ±20V | 598 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
TSM10N60CZ C0MOSFET N-CH 600V 10A TO220 Taiwan Semiconductor Corporation |
2,041 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8 nC @ 10 V | ±30V | 1738 pF @ 25 V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM10N60CZ C0GMOSFET N-CH 600V 10A TO220 Taiwan Semiconductor Corporation |
3,068 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8 nC @ 10 V | ±30V | 1738 pF @ 25 V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM22P10CI C0GMOSFET P-CH 100V 22A ITO220 Taiwan Semiconductor Corporation |
3,217 | - |
RFQ |
Технические |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42 nC @ 10 V | ±25V | 2250 pF @ 30 V | - | 48W (Tc) | 150°C (TJ) | Through Hole |
|
TSM22P10CZ C0GMOSFET P-CH 100V 22A TO220 Taiwan Semiconductor Corporation |
2,882 | - |
RFQ |
Технические |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42 nC @ 10 V | ±25V | 2250 pF @ 30 V | - | 125W (Tc) | 150°C (TJ) | Through Hole |
|
TSM230N06CI C0GMOSFET N-CH 60V 50A ITO220 Taiwan Semiconductor Corporation |
2,759 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 42W (Tc) | 150°C (TJ) | Through Hole |
|
PMV77EN215SMALL SIGNAL FET NXP USA Inc. |
21,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
TSM230N06CZ C0GMOSFET N-CH 60V 50A TO220 Taiwan Semiconductor Corporation |
3,148 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 104W (Tc) | 150°C (TJ) | Through Hole |