| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SK544DN-CHANNEL SMALL SIGNAL MOSFET onsemi |
53,921 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TPH12008NH,L1QMOSFET N-CH 80V 24A 8SOP Toshiba Semiconductor and Storage |
2,224 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24A (Tc) | 10V | 12.3mOhm @ 12A, 10V | 4V @ 300µA | 22 nC @ 10 V | ±20V | 1900 pF @ 40 V | - | 1.6W (Ta), 48W (Tc) | 150°C (TJ) | Surface Mount |
|
2SK544D-ACMOSFET 30MA 20V onsemi |
50,500 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
DMTH10H010LPS-13MOSFET N-CH 100V PWRDI5060 Diodes Incorporated |
2,373 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.8A (Ta), 98.4A (Tc) | 4.5V, 10V | 8.6mOhm @ 13A, 10V | 3V @ 250µA | 53.7 nC @ 10 V | ±20V | 2592 pF @ 50 V | - | 1.5W, 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
AOD2N100MOSFET N-CH 1000V 2A TO252 Alpha & Omega Semiconductor Inc. |
3,194 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2A (Tc) | 10V | 9Ohm @ 1A, 10V | 4.5V @ 250µA | 15 nC @ 10 V | ±30V | 580 pF @ 25 V | - | 83W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount |
|
PHP18NQ11T,127MOSFET N-CH 110V 18A TO220AB Nexperia USA Inc. |
2,850 | - |
RFQ |
Технические |
Tube | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 110 V | 18A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 1mA | 21 nC @ 10 V | ±20V | 633 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
MPF4856RLRASMALL SIGNAL N-CHANNEL MOSFET Motorola |
12,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVTFWS030N06CTAGMOSFET N-CH 60V 6A/19A 8WDFN onsemi |
2,668 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta), 19A (Tc) | 10V | 29.7mOhm @ 3A, 10V | 4V @ 13µA | 4.7 nC @ 10 V | ±20V | 255 pF @ 30 V | - | 2.5W (Ta), 23W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
PJA3440_R1_00001SOT-23, MOSFET Panjit International Inc. |
8,860 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 4.3A (Ta) | 4.5V, 10V | 42mOhm @ 4.3A, 10V | 2.5V @ 250µA | 4.8 nC @ 4.5 V | ±20V | 410 pF @ 20 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7804DN-T1-E3MOSFET N-CH 30V 6.5A PPAK1212-8 Vishay Siliconix |
2,788 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 18.5mOhm @ 10A, 10V | 1.8V @ 250µA | 13 nC @ 5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJE138L_R1_0000160V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
25,460 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 160mA (Ta) | 1.8V, 10V | 4.2Ohm @ 160mA, 10V | 1.5V @ 250µA | 0.7 nC @ 4.5 V | ±20V | 15 pF @ 15 V | - | 223mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
DMN2400UFD-7MOSFET N-CH 20V 900MA 3DFN Diodes Incorporated |
10,040 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 20 V | 900mA (Ta) | 1.5V, 4.5V | 600mOhm @ 200mA, 4.5V | 1V @ 250µA | 500 nC @ 4.5 V | ±12V | 37 pF @ 16 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJA3416-AU_R1_000A120V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.8A (Ta) | 1.8V, 4.5V | 27mOhm @ 5.8A, 4.5V | 1.2V @ 250µA | 6.7 nC @ 4.5 V | ±12V | 513 pF @ 10 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
BG5120KE6327N-CHANNEL POWER MOSFET Infineon Technologies |
879,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PMCM4401VPE084PMCM4401 SMALL SIGNAL FET NXP USA Inc. |
279,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BSS119L6433SMALL SIGNAL N-CHANNEL MOSFET Infineon Technologies |
86,725 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SI7804DN-T1-GE3MOSFET N-CH 30V 6.5A PPAK1212-8 Vishay Siliconix |
3,939 | - |
RFQ |
Технические |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 18.5mOhm @ 10A, 10V | 1.8V @ 250µA | 13 nC @ 5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PMDXB550UNE/S500147SMALL SIGNAL N-CHANNEL MOSFET NXP USA Inc. |
60,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AOTF8N50MOSFET N-CH 500V 8A TO220-3F Alpha & Omega Semiconductor Inc. |
3,329 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 4.5V @ 250µA | 28 nC @ 10 V | ±30V | 1042 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
PMXB75UPE/M5147P-CHANNEL MOSFET NXP USA Inc. |
45,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |