| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IAUC60N06S5N074ATMA1MOSFET_)40V 60V) PG-TDSON-8 Infineon Technologies |
3,755 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tj) | 7V, 10V | 7.4mOhm @ 30A, 10V | 3.4V @ 19µA | 20 nC @ 10 V | ±20V | 1461 pF @ 30 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
MMBF1374T1SMALL SIGNAL N-CHANNEL MOSFET onsemi |
45,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IAUC60N06S5L073ATMA1MOSFET_)40V 60V) PG-TDSON-8 Infineon Technologies |
2,730 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tj) | 4.5V, 10V | 7.3mOhm @ 30A, 10V | 2.2V @ 19µA | 22.6 nC @ 10 V | ±16V | 1655 pF @ 30 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
MPF4391RLRASMALL SIGNAL N-CHANNEL MOSFET onsemi |
17,700 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTD4858N-35GMOSFET N-CH 25V 11.2A/73A IPAK onsemi |
124,166 | - |
RFQ |
Технические |
Bulk,Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 11.2A (Ta), 73A (Tc) | 4.5V, 10V | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2 nC @ 4.5 V | ±20V | 1563 pF @ 12 V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
DMNH4005SPSQ-13MOSFET N-CH 40V 80A PWRDI5060-8 Diodes Incorporated |
2,386 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 48 nC @ 10 V | 20V | 2847 pF @ 20 V | - | 2.8W | -55°C ~ 175°C (TJ) | Surface Mount |
|
DMPH4011SK3-13MOSFET BVDSS: 31V~40V TO252 T&R Diodes Incorporated |
3,738 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 79A (Tc) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 104 nC @ 10 V | ±20V | 4497 pF @ 20 V | - | 3.7W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFR4105TRLPBFMOSFET N-CH 55V 27A DPAK Infineon Technologies |
3,531 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IPU80R2K0P7AKMA1MOSFET N-CH 800V 3A TO251-3 Infineon Technologies |
2,444 | - |
RFQ |
Технические |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9 nC @ 10 V | ±20V | 175 pF @ 500 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPS80R2K0P7AKMA1MOSFET N-CH 800V 3A TO251-3 Infineon Technologies |
53,822 | - |
RFQ |
Технические |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 2Ohm @ 940mA, 10V | 3.5V @ 50µA | 9 nC @ 10 V | ±20V | 175 pF @ 500 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NVMFS6H848NLWFT1GMOSFET N-CH 80V 13A/59A 5DFN onsemi |
3,624 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 13A (Ta), 59A (Tc) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 70µA | 25 nC @ 10 V | ±20V | 1420 pF @ 40 V | - | 3.7W (Ta), 73W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
NVTFS4C10NTAGMOSFET N-CH 30V 15.3A/47A 8WDFN onsemi |
2,788 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15.3A (Ta), 47A (Tc) | 4.5V, 10V | 7.4mOhm @ 30A, 10V | 2.2V @ 250µA | 19.3 nC @ 10 V | ±20V | 993 pF @ 15 V | - | 3W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
6LN04MH-TL-EN-CHANNEL POWER MOSFET onsemi |
12,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2N7002T-7-FMOSFET N-CH 60V 115MA SOT-523 Diodes Incorporated |
305,649 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 50mA, 5V | 2V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI3139KA-TPP-CHANNEL MOSFET, SOT-723 Micro Commercial Co |
15,990 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 660mA | 1.8V, 4.5V | 850mOhm @ 500mA, 4.5V | 1.1V @ 250µA | 0.86 nC @ 4.5 V | ±12V | 40 pF @ 16 V | - | 150mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJQ1916_R1_0020120V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
10,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 950mA (Ta) | 1.2V, 4.5V | 300mOhm @ 500mA, 4.5V | 1V @ 250µA | 1.1 nC @ 4.5 V | ±8V | 46 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJA3404A_R1_00001SOT-23, MOSFET Panjit International Inc. |
3,461 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Ta) | 4.5V, 10V | 23mOhm @ 5.6A, 10V | 2.1V @ 250µA | 12.8 nC @ 10 V | ±20V | 602 pF @ 15 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP2110U-7MOSFET P-CH 20V 3.5A SOT23 Diodes Incorporated |
6,021 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 80mOhm @ 2.8A, 4.5V | 1V @ 250µA | 6 nC @ 4.5 V | ±10V | 443 pF @ 10 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTK3134NT1H0.75A, 20V, N-CHANNEL MOSFET Texas Instruments |
1,415,114 | - |
RFQ |
Технические |
Bulk | - | Active | - | - | - | 890mA (Ta) | 1.5V, 4.5V | - | - | - | ±6V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPD25DP06LMSAUMA1MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies |
3,995 | - |
RFQ |
Технические |
Tape & Reel (TR) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8 nC @ 10 V | ±20V | 420 pF @ 30 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |