| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR164DP-T1-RE3MOSFET N-CH 30V 50A PPAK SO-8 Vishay Siliconix |
2,306 | - |
RFQ |
Технические |
Tape & Reel (TR) | TrenchFET® Gen III | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.5mOhm @ 15A, 10V | 2.5V @ 250µA | 123 nC @ 10 V | ±20V | 3950 pF @ 15 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMNH4006SPS-13MOSFET BVDSS: 31V-40V POWERDI506 Diodes Incorporated |
3,577 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 7mOhm @ 50A, 10V | 4V @ 250µA | 50.9 nC @ 10 V | 20V | 2.28 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
DMTH12H007SPS-13MOSFET BVDSS: 101V~250V POWERDI5 Diodes Incorporated |
2,966 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 84A (Tc) | 6V, 10V | 8.9mOhm @ 30A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 3142 pF @ 60 V | - | 3.5W | -55°C ~ 175°C (TJ) | Surface Mount |
|
NTMFS4C05NAT1GMOSFET N-CH 30V 21.7A/78A 5DFN onsemi |
2,101 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21.7A (Ta), 78A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 30 nC @ 10 V | ±20V | 1972 pF @ 15 V | - | 2.57W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
NTMFS4C805NAT1GTRENCH 6 30V NCH onsemi |
3,605 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.9A (Ta), 78A (Tc) | 4.5V, 10V | 2.8mOhm @ 30A, 10V | 2.2V @ 250µA | 30 nC @ 10 V | ±20V | 1972 pF @ 15 V | - | 770mW (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
IRFR1205TRLPBFMOSFET N-CH 55V 44A DPAK Infineon Technologies |
3,724 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPD65R1K4CFDATMA1MOSFET N-CH 650V 2.8A TO252-3 Infineon Technologies |
3,802 | - |
RFQ |
Технические |
Tape & Reel (TR) | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10 nC @ 10 V | ±20V | 262 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPD65R1K4CFDATMA2MOSFET N-CH 650V 2.8A TO252-3 Infineon Technologies |
3,839 | - |
RFQ |
Технические |
Tape & Reel (TR) | CoolMOS™ CFD2 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10 nC @ 10 V | ±20V | 262 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
STB6NK60Z-1MOSFET N-CH 600V 6A I2PAK STMicroelectronics |
3,789 | - |
RFQ |
Технические |
Tube | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4.5V @ 100µA | 46 nC @ 10 V | ±30V | 905 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
RRH075P03TB1MOSFET P-CH 30V 7.5A 8SOP Rohm Semiconductor |
3,430 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.5A (Ta) | 4V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 1mA | 21 nC @ 5 V | ±20V | 1900 pF @ 10 V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount |
|
AO4268MOSFET N-CHANNEL 60V 19A 8SOIC Alpha & Omega Semiconductor Inc. |
3,783 | - |
RFQ |
Технические |
Tape & Reel (TR) | AlphaSGT™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 19A (Ta) | 4.5V, 10V | 4.8mOhm @ 19A, 10V | 2.3V @ 250µA | 65 nC @ 10 V | ±20V | 2500 pF @ 30 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SJ463A(91)-T1-ASMALL SIGNAL P-CHANNEL MOSFET Renesas Electronics America Inc |
57,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDN363NN-CHANNEL POWER MOSFET Fairchild Semiconductor |
58,788 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Tc) | 6V, 10V | 240mOhm @ 1A, 10V | 4V @ 250µA | 5.2 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 500mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BB503CCS-TL-ERF N-CHANNEL MOSFET Renesas Electronics America Inc |
54,000 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPU08N05LN-CHANNEL POWER MOSFET Infineon Technologies |
54,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IRFS634BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
41,000 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Tj) | 10V | 450mOhm @ 4.05A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
2SJ463A(0)-T1-ATSMALL SIGNAL P-CHANNEL MOSFET Renesas Electronics America Inc |
36,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVD14N03RT4GN-CHANNEL POWER MOSFET onsemi |
34,386 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SI3456DVSMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
37,010 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.1A (Ta) | 4.5V, 10V | 45mOhm @ 5.1A, 10V | 2V @ 250µA | 12.6 nC @ 10 V | ±20V | 463 pF @ 15 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF710BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
31,593 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±30V | 330 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |