Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR164DP-T1-RE3

SIR164DP-T1-RE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix
2,306 -

RFQ

SIR164DP-T1-RE3

Технические

Tape & Reel (TR) TrenchFET® Gen III Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2.5mOhm @ 15A, 10V 2.5V @ 250µA 123 nC @ 10 V ±20V 3950 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMNH4006SPS-13

DMNH4006SPS-13

MOSFET BVDSS: 31V-40V POWERDI506

Diodes Incorporated
3,577 -

RFQ

DMNH4006SPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 7mOhm @ 50A, 10V 4V @ 250µA 50.9 nC @ 10 V 20V 2.28 pF @ 25 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
DMTH12H007SPS-13

DMTH12H007SPS-13

MOSFET BVDSS: 101V~250V POWERDI5

Diodes Incorporated
2,966 -

RFQ

DMTH12H007SPS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 120 V 84A (Tc) 6V, 10V 8.9mOhm @ 30A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 3142 pF @ 60 V - 3.5W -55°C ~ 175°C (TJ) Surface Mount
NTMFS4C05NAT1G

NTMFS4C05NAT1G

MOSFET N-CH 30V 21.7A/78A 5DFN

onsemi
2,101 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 21.7A (Ta), 78A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 1972 pF @ 15 V - 2.57W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4C805NAT1G

NTMFS4C805NAT1G

TRENCH 6 30V NCH

onsemi
3,605 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 11.9A (Ta), 78A (Tc) 4.5V, 10V 2.8mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 1972 pF @ 15 V - 770mW (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR1205TRLPBF

IRFR1205TRLPBF

MOSFET N-CH 55V 44A DPAK

Infineon Technologies
3,724 -

RFQ

IRFR1205TRLPBF

Технические

Tape & Reel (TR) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R1K4CFDATMA1

IPD65R1K4CFDATMA1

MOSFET N-CH 650V 2.8A TO252-3

Infineon Technologies
3,802 -

RFQ

IPD65R1K4CFDATMA1

Технические

Tape & Reel (TR) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 2.8A (Tc) 10V 1.4Ohm @ 1A, 10V 4.5V @ 100µA 10 nC @ 10 V ±20V 262 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R1K4CFDATMA2

IPD65R1K4CFDATMA2

MOSFET N-CH 650V 2.8A TO252-3

Infineon Technologies
3,839 -

RFQ

IPD65R1K4CFDATMA2

Технические

Tape & Reel (TR) CoolMOS™ CFD2 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 2.8A (Tc) 10V 1.4Ohm @ 1A, 10V 4.5V @ 100µA 10 nC @ 10 V ±20V 262 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB6NK60Z-1

STB6NK60Z-1

MOSFET N-CH 600V 6A I2PAK

STMicroelectronics
3,789 -

RFQ

STB6NK60Z-1

Технические

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 905 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
RRH075P03TB1

RRH075P03TB1

MOSFET P-CH 30V 7.5A 8SOP

Rohm Semiconductor
3,430 -

RFQ

RRH075P03TB1

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4V, 10V 21mOhm @ 7.5A, 10V 2.5V @ 1mA 21 nC @ 5 V ±20V 1900 pF @ 10 V - 650mW (Ta) 150°C (TJ) Surface Mount
AO4268

AO4268

MOSFET N-CHANNEL 60V 19A 8SOIC

Alpha & Omega Semiconductor Inc.
3,783 -

RFQ

AO4268

Технические

Tape & Reel (TR) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 19A (Ta) 4.5V, 10V 4.8mOhm @ 19A, 10V 2.3V @ 250µA 65 nC @ 10 V ±20V 2500 pF @ 30 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ463A(91)-T1-A

2SJ463A(91)-T1-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc
57,000 -

RFQ

2SJ463A(91)-T1-A

Технические

Bulk * Active - - - - - - - - - - - - - -
FDN363N

FDN363N

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
58,788 -

RFQ

FDN363N

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Tc) 6V, 10V 240mOhm @ 1A, 10V 4V @ 250µA 5.2 nC @ 10 V ±20V 200 pF @ 25 V - 500mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
BB503CCS-TL-E

BB503CCS-TL-E

RF N-CHANNEL MOSFET

Renesas Electronics America Inc
54,000 -

RFQ

BB503CCS-TL-E

Технические

Bulk * Obsolete - - - - - - - - - - - - - -
SPU08N05L

SPU08N05L

N-CHANNEL POWER MOSFET

Infineon Technologies
54,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IRFS634B

IRFS634B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
41,000 -

RFQ

IRFS634B

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tj) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ463A(0)-T1-AT

2SJ463A(0)-T1-AT

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc
36,000 -

RFQ

2SJ463A(0)-T1-AT

Технические

Bulk * Active - - - - - - - - - - - - - -
NVD14N03RT4G

NVD14N03RT4G

N-CHANNEL POWER MOSFET

onsemi
34,386 -

RFQ

NVD14N03RT4G

Технические

Bulk * Active - - - - - - - - - - - - - -
SI3456DV

SI3456DV

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
37,010 -

RFQ

SI3456DV

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 45mOhm @ 5.1A, 10V 2V @ 250µA 12.6 nC @ 10 V ±20V 463 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF710B

IRF710B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
31,593 -

RFQ

IRF710B

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 330 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь