| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MCH3383-TL-HMOSFET P-CH 12V 3.5A SC70 Sanyo |
34,797 | - |
RFQ |
Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 3.5A (Ta) | - | 69mOhm @ 1.5A, 2.5V | 800mV @ 1mA | 6.2 nC @ 2.5 V | ±5V | 1010 pF @ 6 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
SSR1N60BTMMOSFET N-CH 600V 900MA DPAK Fairchild Semiconductor |
33,527 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SK669-ACMOSFET N-CH 50V 100MA 3SPA onsemi |
20,000 | - |
RFQ |
Технические |
Box | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 100mA (Ta) | - | 20Ohm @ 10mA, 10V | - | - | - | 15 pF @ 10 V | - | 200mW (Ta) | 125°C (TJ) | Through Hole |
|
2SK669N-CHANNEL MOSFET Sanyo |
11,160 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RTF016N05FRATLMOSFET N-CH 45V 1.6A TUMT3 Rohm Semiconductor |
8,390 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 1.6A (Ta) | - | 190mOhm @ 1.6A, 4.5V | 1.5V @ 1mA | 2.3 nC @ 4.5 V | ±12V | 150 pF @ 10 V | - | 800mW | 150°C | Surface Mount |
|
FW808-M-TL-EMOSFET (COMPOUND TYPE) onsemi |
182,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
NTD4909NAT4HNFET DPAK 30V 41A 8MO onsemi |
157,500 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
MTD2N40ET4N-CHANNEL POWER MOSFET onsemi |
137,500 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTMFS4C800NT1GMOSFET N-CH 30V 69A SO8FL onsemi |
1,988 | - |
RFQ |
Tape & Reel (TR),Tape & Reel (TR),Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IPL60R1K5C6SATMA1MOSFET N-CH 600V 3A THIN-PAK Infineon Technologies |
2,624 | - |
RFQ |
Технические |
Tape & Reel (TR) | CoolMOS™ C6 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 26.6W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRFD214PBFMOSFET N-CH 250V 450MA 4DIP Vishay Siliconix |
3,769 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 450mA (Ta) | 10V | 2Ohm @ 270mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFR110TRLPBFMOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
2,976 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PSMN8R7-100YSFQPSMN8R7-100YSF/SOT669/LFPAK Nexperia USA Inc. |
3,574 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | - | - | - | 90A (Tj) | - | - | - | - | - | - | - | - | - | - |
|
IRFR210TRRPBFMOSFET N-CH 200V 2.6A DPAK Vishay Siliconix |
2,940 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SUD23N06-31-T4-GE3MOSFET N-CH 60V 21.4A TO252 Vishay Siliconix |
3,978 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21.4A (Tc) | 4.5V, 10V | 31mOhm @ 15A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 5.7W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIRA52DP-T1-RE3MOSFET N-CH 40V 60A PPAK SO-8 Vishay Siliconix |
3,069 | - |
RFQ |
Tape & Reel (TR) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 15A, 10V | 2.4V @ 250µA | 150 nC @ 10 V | +20V, -16V | 7150 pF @ 20 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SIJA52ADP-T1-GE3MOSFET N-CH 40V 41.6A/131A PPAK Vishay Siliconix |
3,410 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 41.6A (Ta), 131A (Tc) | 4.5V, 10V | 1.63mOhm @ 15A, 10V | 2.4V @ 250µA | 100 nC @ 10 V | +20V, -16V | 5500 pF @ 20 V | - | 4.8W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FCU3400N80ZMOSFET N-CH 800V 2A IPAK onsemi |
3,845 | - |
RFQ |
Технические |
Tube,Tube | SuperFET® II | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | ±20V | 400 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
DMTH4004LPSQ-13MOSFET N-CH 40V 100A PWRDI5060-8 Diodes Incorporated |
2,993 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 3V @ 250µA | 69.6 nC @ 10 V | ±20V | 5220 pF @ 20 V | - | 2.83W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SSN1N45BBUMOSFET N-CH 450V 500MA TO92-3 Fairchild Semiconductor |
111,795 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 500mA (Tc) | 10V | 4.25Ohm @ 250mA, 10V | 3.7V @ 250µA | 8.5 nC @ 10 V | ±50V | 240 pF @ 25 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |