Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSP225/S911115

BSP225/S911115

P-CHANNEL MOSFET

NXP USA Inc.
313,000 -

RFQ

BSP225/S911115

Технические

Bulk * Active - - - - - - - - - - - - - -
3SK295ZQ-TL-E

3SK295ZQ-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
36,000 -

RFQ

3SK295ZQ-TL-E

Технические

Bulk * Active - - - - - - - - - - - - - -
UPA621TT-E1-A

UPA621TT-E1-A

MOSFET N-CH 20V 5A 6WSOF

Renesas Electronics America Inc
30,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) - 50mOhm @ 2.5A, 4.5V 1.5V @ 1mA 3.3 nC @ 4 V - 270 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
FDG315N

FDG315N

2A, 30V, N-CHANNEL, MOSFET

Fairchild Semiconductor
20,245 -

RFQ

FDG315N

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 120mOhm @ 2A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 220 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ243(0)-T1-A

2SJ243(0)-T1-A

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
16,000 -

RFQ

2SJ243(0)-T1-A

Технические

Bulk * Active - - - - - - - - - - - - - -
2SJ451ZK-TL-E

2SJ451ZK-TL-E

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
12,000 -

RFQ

2SJ451ZK-TL-E

Технические

Bulk * Active - - - - - - - - - - - - - -
VN0104N3-G-P013

VN0104N3-G-P013

MOSFET N-CH 40V 350MA TO92-3

Microchip Technology
2,851 -

RFQ

VN0104N3-G-P013

Технические

Tape & Box (TB) - Active N-Channel MOSFET (Metal Oxide) 40 V 350mA (Tj) 5V, 10V 3Ohm @ 1A, 10V 2.4V @ 1mA - ±20V 65 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR7746TRPBF

IRFR7746TRPBF

MOSFET N-CH 75V 56A DPAK

Infineon Technologies
2,310 -

RFQ

IRFR7746TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RW4C045BCTCL1

RW4C045BCTCL1

PCH -20V -4.5A POWER MOSFET: RW4

Rohm Semiconductor
6,000 -

RFQ

RW4C045BCTCL1

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 56mOhm @ 4.5A, 4.5V 1.5V @ 1mA 6.5 nC @ 4.5 V ±8V 460 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
FDFS2P753Z

FDFS2P753Z

MOSFET P-CH 30V 3A 8SOIC

Fairchild Semiconductor
425,327 -

RFQ

FDFS2P753Z

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) - 115mOhm @ 3A, 10V 3V @ 250µA 9.3 nC @ 10 V ±25V 455 pF @ 10 V Schottky Diode (Isolated) 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC889N03LSG

BSC889N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
329,990 -

RFQ

BSC889N03LSG

Технические

Bulk * Active - - - - - - - - - - - - - -
BSP324L6327

BSP324L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
214,444 -

RFQ

BSP324L6327

Технические

Bulk * Active - - - - - - - - - - - - - -
ISL9N312AD3

ISL9N312AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
211,233 -

RFQ

ISL9N312AD3

Технические

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Through Hole
FDZ202P

FDZ202P

MOSFET P-CH 20V 5.5A 12BGA

Fairchild Semiconductor
155,615 -

RFQ

FDZ202P

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 2.5V, 4.5V 45mOhm @ 5.5A, 4.5V 1.5V @ 250µA 13 nC @ 4.5 V ±12V 884 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AONR62921

AONR62921

100V N CHAN FET SMD

Alpha & Omega Semiconductor Inc.
2,998 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - -
UPA507TE-T1-AT

UPA507TE-T1-AT

P-CHANNEL MOSFET

Renesas Electronics America Inc
141,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPD30N06S223ATMA2

IPD30N06S223ATMA2

MOSFET N-CH 55V 30A TO252-31

Infineon Technologies
2,059 -

RFQ

IPD30N06S223ATMA2

Технические

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 23mOhm @ 21A, 10V 4V @ 50µA 32 nC @ 10 V ±20V 901 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISL9N312AD3ST

ISL9N312AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
138,810 -

RFQ

ISL9N312AD3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Surface Mount
SIRA60DP-T1-RE3

SIRA60DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix
3,303 -

RFQ

SIRA60DP-T1-RE3

Технические

Tape & Reel (TR) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 0.94mOhm @ 20A, 10V 2.2V @ 250µA 125 nC @ 10 V +20V, -16V 7650 pF @ 15 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP129L6327

BSP129L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
110,655 -

RFQ

BSP129L6327

Технические

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь