| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIRA22DP-T1-RE3MOSFET N-CH 25V 60A PPAK SO-8 Vishay Siliconix |
2,336 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 0.76mOhm @ 15A, 10V | 2.2V @ 250µA | 155 nC @ 10 V | +16V, -12V | 7570 pF @ 10 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
MMDF2N05ZR2SMALL SIGNAL N-CHANNEL MOSFET onsemi |
87,765 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NTMFSC011N08M7MV7 80V SG 10MOHM PQFN56DC onsemi |
3,772 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 12.5A (Ta), 61A (Tc) | 10V | 10mOhm @ 10A, 10V | 4.5V @ 120µA | 38 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 3.3W (Ta), 78.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSH207,135MOSFET P-CH 12V 1.52A 6TSOP NXP USA Inc. |
66,873 | - |
RFQ |
Технические |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 1.52A (Ta) | 1.8V, 4.5V | 120mOhm @ 1A, 4.5V | 600mV @ 1mA (Typ) | 8.8 nC @ 4.5 V | ±8V | 500 pF @ 9.6 V | - | 417mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SISH112DN-T1-GE3MOSFET N-CH 30V 11.3A PPAK Vishay Siliconix |
2,735 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250µA | 27 nC @ 4.5 V | ±12V | 2610 pF @ 15 V | - | 1.5W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount |
|
FDZ493PMOSFET P-CH 20V 4.6A 9BGA Fairchild Semiconductor |
47,700 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.6A (Ta) | 2.5V, 4.5V | 46mOhm @ 4.6A, 4.5V | 1.5V @ 250µA | 11 nC @ 4.5 V | ±12V | 754 pF @ 10 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLR110TRPBF-BE3N-CHANNEL 100V Vishay Siliconix |
3,851 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 4V, 5V | 540mOhm @ 2.6A, 5V | 2V @ 250µA | 6.1 nC @ 5 V | ±10V | 250 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDFME2P823ZT2.6A, 20V, P-CHANNEL MOSFET Fairchild Semiconductor |
40,000 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.8V, 4.5V | 142mOhm @ 2.3A, 4.5V | 1V @ 250µA | 7.7 nC @ 4.5 V | ±8V | 405 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ZXMN15A27KTCMOSFET N-CH 150V 1.7A TO252-3 Diodes Incorporated |
3,078 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 1.7A (Ta) | 10V | 650mOhm @ 2.15A, 10V | 4V @ 250µA | 6.6 nC @ 10 V | ±25V | 169 pF @ 25 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSP603S2LNTN-CHANNEL POWER MOSFET Infineon Technologies |
32,813 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
DMT4002LPS-13MOSFET N-CH 40V 100A PWRDI5060-8 Diodes Incorporated |
3,939 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 3V @ 250µA | 116.1 nC @ 10 V | ±20V | 6771 pF @ 20 V | - | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BUK9230-55A/C1118N-CHANNEL POWER MOSFET NXP USA Inc. |
31,793 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AOTF8N65MOSFET N-CH 650V 8A TO220-3F Alpha & Omega Semiconductor Inc. |
2,143 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 1.15Ohm @ 4A, 10V | 4.5V @ 250µA | 28 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
CPH3430-TL-EMOSFET N-CH 60V 2A 3CPH onsemi |
28,944 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | - | 220mOhm @ 1A, 4V | - | 4.2 nC @ 4 V | - | 325 pF @ 20 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | |
|
NTMFS4C054NT1GMOSFET N-CH 30V 22.5A/80A 5DFN onsemi |
2,899 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22.5A (Ta), 80A (Tc) | 4.5V, 10V | 2.54mOhm @ 30A, 10V | 2.2V @ 250µA | 32.5 nC @ 10 V | ±20V | 2300 pF @ 15 V | - | 2.59W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR820DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
2,063 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 3mOhm @ 15A, 10V | 2.4V @ 250µA | 95 nC @ 10 V | ±20V | 3512 pF @ 15 V | - | 37.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
3SK324UG-TL-HDUAL N-CHANNEL MOSFET Renesas Electronics America Inc |
28,500 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
NVTFWS008N04CTAGMOSFET N-CH 40V 14A/48A 8WDFN onsemi |
3,620 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta), 48A (Tc) | 10V | 8.5mOhm @ 15A, 10V | 3.5V @ 30µA | 10 nC @ 10 V | ±20V | 625 pF @ 25 V | - | 3.1W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
MGSF3455XT1P-CHANNEL MOSFET onsemi |
25,315 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AOT9N70MOSFET N-CH 700V 9A TO220 Alpha & Omega Semiconductor Inc. |
3,910 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 9A (Tc) | 10V | 1.2Ohm @ 4.5A, 10V | 4.5V @ 250µA | 35 nC @ 10 V | ±30V | 1630 pF @ 25 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |