Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDD6512A

FDD6512A

MOSFET N-CH 20V 10.7A/36A DPAK

Fairchild Semiconductor
516,130 -

RFQ

FDD6512A

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 10.7A (Ta), 36A (Tc) 2.5V, 4.5V 21mOhm @ 10.7A, 4.5V 1.5V @ 250µA 19 nC @ 4.5 V ±12V 1082 pF @ 10 V - 3.8W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDU8796

FDU8796

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor
504,075 -

RFQ

FDU8796

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2610 pF @ 13 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSF885N03LQ3GXUMA1

BSF885N03LQ3GXUMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
465,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
MCU05N60A-TP

MCU05N60A-TP

MOSFET N-CH 600V 4.5A DPAK

Micro Commercial Co
30,000 -

RFQ

MCU05N60A-TP

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tj) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA - ±30V 670 pF @ 25 V - 1.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDS8426A

NDS8426A

MOSFET N-CH 20V 10.5A 8SOIC

Fairchild Semiconductor
296,640 -

RFQ

NDS8426A

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 10.5A (Ta) 2.7V, 4.5V 13.5mOhm @ 10.5A, 4.5V 1V @ 250µA 60 nC @ 4.5 V ±8V 2150 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTD4N60

NTD4N60

N-CHANNEL POWER MOSFET

onsemi
184,994 -

RFQ

NTD4N60

Технические

Bulk * Active - - - - - - - - - - - - - -
STD11N50M2

STD11N50M2

MOSFET N-CH 500V 8A DPAK

STMicroelectronics
2,956 -

RFQ

STD11N50M2

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 530mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±25V 395 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD5N65M6

STD5N65M6

MOSFET N-CH 650V DPAK

STMicroelectronics
3,965 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
FQD5N40TM

FQD5N40TM

MOSFET N-CH 400V 3.4A DPAK

Fairchild Semiconductor
157,506 -

RFQ

FQD5N40TM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.4A (Tc) 10V 1.6Ohm @ 1.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD6778A

FDD6778A

MOSFET N-CH 25V 12A/10A DPAK

Fairchild Semiconductor
128,596 -

RFQ

FDD6778A

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 10A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 870 pF @ 13 V - 3.7W (Ta), 24W (Tc) -55°C ~ 175°C (TJ) Surface Mount
3LN03SS-TL-E

3LN03SS-TL-E

N-CHANNEL SILICON MOSFET

Sanyo
120,000 -

RFQ

3LN03SS-TL-E

Технические

Bulk * Active - - - - - - - - - - - - - -
FDG361N

FDG361N

MOSFET N-CH 100V 600MA SC88

Fairchild Semiconductor
102,013 -

RFQ

FDG361N

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 600mA (Ta) 6V, 10V 500mOhm @ 600mA, 10V 4V @ 250µA 5 nC @ 10 V ±20V 153 pF @ 50 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDFC3N108

FDFC3N108

MOSFET N-CH 20V 3A SUPERSOT6

Fairchild Semiconductor
98,521 -

RFQ

FDFC3N108

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 70mOhm @ 3A, 4.5V 1.5V @ 250µA 4.9 nC @ 4.5 V ±12V 355 pF @ 10 V Schottky Diode (Isolated) - -55°C ~ 150°C (TJ) Surface Mount
FDD7030BL

FDD7030BL

MOSFET N-CH 30V 14A/56A DPAK

Fairchild Semiconductor
80,423 -

RFQ

FDD7030BL

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 56A (Tc) 4.5V, 10V 9.5mOhm @ 14A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1425 pF @ 15 V - 2.8W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76121D3ST

HUF76121D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
76,888 -

RFQ

HUF76121D3ST

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS630A

IRFS630A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
55,970 -

RFQ

IRFS630A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 400mOhm @ 3.25A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 650 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP135L6433

BSP135L6433

N-CHANNEL POWER MOSFET

Infineon Technologies
49,329 -

RFQ

BSP135L6433

Технические

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFP15N06

RFP15N06

N-CHANNEL POWER MOSFET

Harris Corporation
27,167 -

RFQ

RFP15N06

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 140mOhm @ 7.5A, 10V 4V @ 1mA - ±20V 850 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK624R5-30C,118

BUK624R5-30C,118

PFET, 90A I(D), 30V, 0.0075OHM

NXP USA Inc.
24,820 -

RFQ

BUK624R5-30C,118

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 10V 4.5mOhm @ 25A, 10V 2.8V @ 1mA 78 nC @ 10 V ±16V 4707 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ)
FQU20N06TU

FQU20N06TU

MOSFET N-CH 60V 16.8A IPAK

Fairchild Semiconductor
22,736 -

RFQ

FQU20N06TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 16.8A (Tc) 10V 63mOhm @ 8.4A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 2.5W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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