Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOTF10N65

AOTF10N65

MOSFET N-CH 650V 10A TO220-3F

Alpha & Omega Semiconductor Inc.
3,121 -

RFQ

AOTF10N65

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 1Ohm @ 5A, 10V 4.5V @ 250µA 33 nC @ 10 V ±30V 1645 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT2606L

AOT2606L

MOSFET N-CH 60V 13A/72A TO220

Alpha & Omega Semiconductor Inc.
3,908 -

RFQ

AOT2606L

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 72A (Tc) 10V 6.5mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 4050 pF @ 30 V - 2.1W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF2606L

AOTF2606L

MOSFET N-CH 60V 13A/54A TO220-3F

Alpha & Omega Semiconductor Inc.
2,178 -

RFQ

AOTF2606L

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 54A (Tc) 10V 6.5mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 4050 pF @ 30 V - 2.1W (Ta), 36.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVTFS5C658NLTAG

NVTFS5C658NLTAG

MOSFET N-CH 60V 109A 8WDFN

onsemi
3,163 -

RFQ

NVTFS5C658NLTAG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 109A (Tc) 4.5V, 10V 5mOhm @ 50A, 10V 2.2V @ 250µA 12 nC @ 4.5 V ±20V 1935 pF @ 25 V - 114W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK4A50D(STA4,Q,M)

TK4A50D(STA4,Q,M)

MOSFET N-CH 500V 4A TO220SIS

Toshiba Semiconductor and Storage
3,284 -

RFQ

TK4A50D(STA4,Q,M)

Технические

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Ta) 10V 2Ohm @ 2A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
DMT15H017SK3-13

DMT15H017SK3-13

MOSFET BVDSS: 101V~250V TO252 T&

Diodes Incorporated
2,929 -

RFQ

DMT15H017SK3-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 68A (Tc) 8V, 10V 18.5mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 2344 pF @ 75 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C670NLWFAFT3G

NVMFS5C670NLWFAFT3G

MOSFET N-CH 60V 17A/71A 5DFN

onsemi
2,795 -

RFQ

NVMFS5C670NLWFAFT3G

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 71A (Tc) 4.5V, 10V 6.1mOhm @ 35A, 10V 2V @ 53µA 20 nC @ 10 V ±20V 1400 pF @ 25 V - 61W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP042N03LGHKSA1

IPP042N03LGHKSA1

MOSFET N-CH 30V 70A TO220-3

Infineon Technologies
3,187 -

RFQ

IPP042N03LGHKSA1

Технические

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK10P50W,RQ

TK10P50W,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage
3,551 -

RFQ

TK10P50W,RQ

Технические

Tape & Reel (TR) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C Surface Mount
FDMC15N06

FDMC15N06

MOSFET N-CH 55V 2.4A/15A 8MLP

onsemi
1,000 -

RFQ

FDMC15N06

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 2.4A (Ta), 15A (Tc) 10V 900mOhm @ 15A, 10V 4V @ 250µA 11.5 nC @ 10 V ±20V 350 pF @ 25 V - 2.3W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJD80N04-AU_L2_000A1

PJD80N04-AU_L2_000A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 1258 pF @ 25 V - 2.4W (Ta), 79.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HRFZ44N

HRFZ44N

MOSFET N-CH 55V 49A TO220-3

Fairchild Semiconductor
12,886 -

RFQ

HRFZ44N

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 22mOhm @ 25A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
UPA2816T1S-E2-AT

UPA2816T1S-E2-AT

MOSFET P-CH 30V 17A 8HWSON

Renesas Electronics America Inc
5,000 -

RFQ

UPA2816T1S-E2-AT

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 17A (Tc) 4.5V, 10V 15.5mOhm @ 17A, 10V - 33.4 nC @ 10 V +20V, -25V 1160 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
2SJ356(0)-T1-AZ

2SJ356(0)-T1-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
961,000 -

RFQ

2SJ356(0)-T1-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
RJK03J5DPA-00#J5A

RJK03J5DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics America Inc
363,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDD6696

FDD6696

MOSFET N-CH 30V 13A/50A DPAK

Fairchild Semiconductor
217,895 -

RFQ

FDD6696

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 50A (Tc) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 24 nC @ 5 V ±16V 1715 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPU06N03LZG

IPU06N03LZG

N-CHANNEL POWER MOSFET

Infineon Technologies
172,500 -

RFQ

IPU06N03LZG

Технические

Bulk * Active - - - - - - - - - - - - - -
FQP9N25

FQP9N25

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
132,000 -

RFQ

FQP9N25

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 9.4A (Tc) 10V 420mOhm @ 4.7A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 700 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2111-T2-AZ

2SK2111-T2-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
96,000 -

RFQ

2SK2111-T2-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
UPA2591T1H-T1-AT

UPA2591T1H-T1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
93,000 -

RFQ

UPA2591T1H-T1-AT

Технические

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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