Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AON6522

AON6522

MOSFET N-CH 25V 71A/200A 8DFN

Alpha & Omega Semiconductor Inc.
3,045 -

RFQ

AON6522

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 71A (Ta), 200A (Tc) 4.5V, 10V 0.95mOhm @ 20A, 10V 2V @ 250µA 145 nC @ 10 V ±20V 7036 pF @ 15 V - 7.3W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C456NLWFAFT3G

NVMFS5C456NLWFAFT3G

MOSFET N-CH 40V 22A/87A 5DFN

onsemi
3,722 -

RFQ

NVMFS5C456NLWFAFT3G

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 87A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V 2V @ 50µA 18 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR7740TRPBF

IRFR7740TRPBF

MOSFET N-CH 75V 87A DPAK

Infineon Technologies
3,476 -

RFQ

IRFR7740TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 87A (Tc) 6V, 10V 7.2mOhm @ 52A, 10V 3.7V @ 100µA 126 nC @ 10 V ±20V 4430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK33S10N1L,LQ

TK33S10N1L,LQ

MOSFET N-CH 100V 33A DPAK

Toshiba Semiconductor and Storage
2,213 -

RFQ

TK33S10N1L,LQ

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 4.5V, 10V 9.7mOhm @ 16.5A, 10V 2.5V @ 500µA 33 nC @ 10 V ±20V 2250 pF @ 10 V - 125W (Tc) 175°C Surface Mount
DMTH4004SK3Q-13

DMTH4004SK3Q-13

MOSFET N-CH 40V 100A TO252

Diodes Incorporated
2,637 -

RFQ

DMTH4004SK3Q-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.2mOhm @ 90A, 10V 4V @ 250µA 68.6 nC @ 10 V ±20V 4305 pF @ 25 V - 3.9W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVTYS010N06CLTWG

NVTYS010N06CLTWG

T6 60V N-CH LL IN LFPAK33

onsemi
2,548 -

RFQ

NVTYS010N06CLTWG

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 51A (Tc) 4.5V, 10V 9.8mOhm @ 25A, 10V 2V @ 35µA 13 nC @ 10 V ±20V 910 pF @ 25 V - 3.1W (Ta), 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS013N08LHTWG

NVMYS013N08LHTWG

T8 80V LL LFPAK

onsemi
2,826 -

RFQ

NVMYS013N08LHTWG

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 11A (Ta), 42A (Tc) 4.5V, 10V 13.1mOhm @ 10A, 10V 2V @ 45µA 17 nC @ 10 V ±20V 906 pF @ 40 V - 3.6W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C673NLT3G

NTMFS5C673NLT3G

MOSFET N-CH 60V 5DFN

onsemi
2,488 -

RFQ

NTMFS5C673NLT3G

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 9.2mOhm @ 25A, 10V 2V @ 35µA 9.5 nC @ 10 V ±20V 880 pF @ 25 V - 3.6W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQR40030ER_GE3

SQR40030ER_GE3

MOSFET N-CH 40V TO252 REVERSE

Vishay Siliconix
3,960 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active - - - - - - - - - - - - - Surface Mount
SQR97N06-6M3L_GE3

SQR97N06-6M3L_GE3

MOSFET N-CH 60V 50A TO252

Vishay Siliconix
2,337 -

RFQ

SQR97N06-6M3L_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 97A (Tc) 4.5V, 10V 6.3mOhm @ 25A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 6060 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOT600A60L

AOT600A60L

MOSFET N-CH 600V 8A TO220

Alpha & Omega Semiconductor Inc.
3,804 -

RFQ

AOT600A60L

Технические

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 250µA 11.5 nC @ 10 V ±20V 608 pF @ 100 V - 27.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF600A60L

AOTF600A60L

MOSFET N-CH 600V 8A TO220F

Alpha & Omega Semiconductor Inc.
2,011 -

RFQ

AOTF600A60L

Технические

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tj) 10V 600mOhm @ 2.1A, 10V 3.5V @ 250µA 11.5 nC @ 10 V ±20V 608 pF @ 100 V - 27.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD7N52K3

STD7N52K3

MOSFET N-CH 525V 6A DPAK

STMicroelectronics
2,642 -

RFQ

STD7N52K3

Технические

Tape & Reel (TR),Cut Tape (CT) SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 525 V 6A (Tc) 10V 980mOhm @ 3.1A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 737 pF @ 100 V - 90W (Tc) 150°C (TJ) Surface Mount
SIHB8N50D-GE3

SIHB8N50D-GE3

MOSFET N-CH 500V 8.7A TO263

Vishay Siliconix
3,175 -

RFQ

SIHB8N50D-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFR9310TR-GE3

SIHFR9310TR-GE3

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
3,950 -

RFQ

SIHFR9310TR-GE3

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ34SPBF

IRFZ34SPBF

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
2,227 -

RFQ

IRFZ34SPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB6N60M2

STB6N60M2

MOSFET N-CH 600V 4.5A D2PAK

STMicroelectronics
3,284 -

RFQ

STB6N60M2

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V 4V @ 250µA 8 nC @ 10 V ±25V 232 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPB02N60C3

SPB02N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
11,500 -

RFQ

SPB02N60C3

Технические

Bulk * Active - - - - - - - - - - - - - -
HUF75307D3

HUF75307D3

MOSFET N-CH 55V 15A IPAK

Harris Corporation
8,653 -

RFQ

HUF75307D3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) 10V 90mOhm @ 15A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU2N90TU

FQU2N90TU

MOSFET N-CH 900V 1.7A IPAK

Fairchild Semiconductor
349,140 -

RFQ

FQU2N90TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ производители
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15,000+ Складские запасы
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